Overview
The FDG6303N is a dual N-Channel logic level enhancement mode field effect transistor produced by onsemi using their proprietary, high cell density DMOS technology. This device is designed to minimize on-state resistance, making it ideal for low voltage applications. It serves as a replacement for bipolar digital transistors and small signal MOSFETs, offering very low level gate drive requirements and compact packaging.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 25 | V |
| Gate-Source Voltage (VGSS) | -0.5 to +8 | V |
| Continuous Drain Current (ID) | 0.5 | A |
| Pulsed Drain Current (ID) | 1.5 | A |
| Maximum Power Dissipation (PD) | 0.3 | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to 150 | °C |
| Electrostatic Discharge Rating (ESD) | 6.0 kV (Human Body Model) | kV |
| Gate Threshold Voltage (VGS(th)) | 0.65 to 1.5 | V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 4.5 V | 0.34 to 0.45 | Ω |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 2.7 V | 0.44 to 0.6 | Ω |
| Thermal Resistance, Junction-to-Ambient (RJA) | 415 | °C/W |
Key Features
- Very high cell density DMOS technology to minimize on-state resistance.
- Designed for low voltage applications.
- Very low level gate drive requirements, allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
- Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model).
- Compact industry standard SC70-6 surface mount package.
- Pb-Free and RoHS compliant.
Applications
The FDG6303N is suitable for a wide range of applications, including:
- Low voltage power switching.
- Replacement for bipolar digital transistors and small signal MOSFETs.
- General purpose switching in electronic circuits.
- Automotive and industrial control systems.
- Consumer electronics requiring low power consumption and high efficiency.
Q & A
- What is the maximum drain-source voltage (VDSS) of the FDG6303N?
The maximum drain-source voltage (VDSS) is 25 V.
- What is the continuous drain current (ID) rating of the FDG6303N?
The continuous drain current (ID) rating is 0.5 A.
- What is the gate-source threshold voltage (VGS(th)) range of the FDG6303N?
The gate-source threshold voltage (VGS(th)) range is 0.65 to 1.5 V.
- What is the static drain-source on-resistance (RDS(on)) at VGS = 4.5 V?
The static drain-source on-resistance (RDS(on)) at VGS = 4.5 V is 0.34 to 0.45 Ω.
- Is the FDG6303N Pb-Free and RoHS compliant?
- What is the thermal resistance, junction-to-ambient (RJA), of the FDG6303N?
The thermal resistance, junction-to-ambient (RJA), is 415 °C/W.
- What is the ESD rating of the FDG6303N?
The ESD rating is 6.0 kV (Human Body Model).
- In what package types is the FDG6303N available?
The FDG6303N is available in SC-88, SC70-6, and SOT-363 packages.
- What are the typical applications of the FDG6303N?
The FDG6303N is typically used in low voltage power switching, as a replacement for bipolar digital transistors and small signal MOSFETs, and in general purpose switching in electronic circuits.
- What is the operating and storage temperature range of the FDG6303N?
The operating and storage temperature range is -55 to 150 °C.
