FDG6303N_G
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onsemi FDG6303N_G

Manufacturer No:
FDG6303N_G
Manufacturer:
onsemi
Package:
Bulk
Description:
INTEGRATED CIRCUIT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDG6303N is a dual N-Channel logic level enhancement mode field effect transistor produced by onsemi using their proprietary, high cell density DMOS technology. This device is designed to minimize on-state resistance, making it ideal for low voltage applications. It serves as a replacement for bipolar digital transistors and small signal MOSFETs, offering very low level gate drive requirements and compact packaging.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) 25 V
Gate-Source Voltage (VGSS) -0.5 to +8 V
Continuous Drain Current (ID) 0.5 A
Pulsed Drain Current (ID) 1.5 A
Maximum Power Dissipation (PD) 0.3 W
Operating and Storage Temperature Range (TJ, TSTG) -55 to 150 °C
Electrostatic Discharge Rating (ESD) 6.0 kV (Human Body Model) kV
Gate Threshold Voltage (VGS(th)) 0.65 to 1.5 V
Static Drain-Source On-Resistance (RDS(on)) at VGS = 4.5 V 0.34 to 0.45 Ω
Static Drain-Source On-Resistance (RDS(on)) at VGS = 2.7 V 0.44 to 0.6 Ω
Thermal Resistance, Junction-to-Ambient (RJA) 415 °C/W

Key Features

  • Very high cell density DMOS technology to minimize on-state resistance.
  • Designed for low voltage applications.
  • Very low level gate drive requirements, allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
  • Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model).
  • Compact industry standard SC70-6 surface mount package.
  • Pb-Free and RoHS compliant.

Applications

The FDG6303N is suitable for a wide range of applications, including:

  • Low voltage power switching.
  • Replacement for bipolar digital transistors and small signal MOSFETs.
  • General purpose switching in electronic circuits.
  • Automotive and industrial control systems.
  • Consumer electronics requiring low power consumption and high efficiency.

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FDG6303N?

    The maximum drain-source voltage (VDSS) is 25 V.

  2. What is the continuous drain current (ID) rating of the FDG6303N?

    The continuous drain current (ID) rating is 0.5 A.

  3. What is the gate-source threshold voltage (VGS(th)) range of the FDG6303N?

    The gate-source threshold voltage (VGS(th)) range is 0.65 to 1.5 V.

  4. What is the static drain-source on-resistance (RDS(on)) at VGS = 4.5 V?

    The static drain-source on-resistance (RDS(on)) at VGS = 4.5 V is 0.34 to 0.45 Ω.

  5. Is the FDG6303N Pb-Free and RoHS compliant?
  6. What is the thermal resistance, junction-to-ambient (RJA), of the FDG6303N?

    The thermal resistance, junction-to-ambient (RJA), is 415 °C/W.

  7. What is the ESD rating of the FDG6303N?

    The ESD rating is 6.0 kV (Human Body Model).

  8. In what package types is the FDG6303N available?

    The FDG6303N is available in SC-88, SC70-6, and SOT-363 packages.

  9. What are the typical applications of the FDG6303N?

    The FDG6303N is typically used in low voltage power switching, as a replacement for bipolar digital transistors and small signal MOSFETs, and in general purpose switching in electronic circuits.

  10. What is the operating and storage temperature range of the FDG6303N?

    The operating and storage temperature range is -55 to 150 °C.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:500mA
Rds On (Max) @ Id, Vgs:450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 10V
Power - Max:300mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88 (SC-70-6)
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