IRF7103TRPBF
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Infineon Technologies IRF7103TRPBF

Manufacturer No:
IRF7103TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 50V 3A 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF7103TRPBF is a 50V Dual N-Channel IR MOSFET™ produced by Infineon Technologies. It is packaged in a SO-8 (Small Outline 8-pin) surface-mount package, making it suitable for a variety of applications requiring compact and reliable power switching. This MOSFET is optimized for switching frequencies below 100 kHz and is qualified according to JEDEC standards, ensuring high reliability and performance.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 50 V
ID (Continuous Drain Current) 3 A
RDS(on) (On-Resistance) 0.18 Ω
VGS(th) (Threshold Voltage) 2-4 V
Package SO-8 -
Switching Frequency < 100 kHz -

Key Features

The IRF7103TRPBF features a planar cell structure, which provides a wide Safe Operating Area (SOA). It is optimized for broad availability from distribution partners and is capable of being wave-soldered, making it versatile for various manufacturing processes. The MOSFET is silicon-optimized for applications switching below 100 kHz and uses an industry-standard surface-mount power package.

Applications

The IRF7103TRPBF is well-suited for driving inductive devices such as fans, heaters, and pumps from microcontrollers. Its 5V gate drive capability makes it an excellent choice for applications requiring low-voltage control. It is also suitable for general-purpose power switching in automotive, industrial, and consumer electronics.

Q & A

  1. What is the maximum drain-source voltage of the IRF7103TRPBF?

    50V.

  2. What is the continuous drain current rating of the IRF7103TRPBF?

    3A.

  3. What is the typical on-resistance of the IRF7103TRPBF?

    0.18 Ω.

  4. What is the package type of the IRF7103TRPBF?

    SO-8.

  5. What is the recommended switching frequency range for the IRF7103TRPBF?

    Below 100 kHz.

  6. Is the IRF7103TRPBF qualified according to any industry standards?

    Yes, it is qualified according to JEDEC standards.

  7. Can the IRF7103TRPBF be wave-soldered?

    Yes, it can be wave-soldered..

  8. What types of devices can the IRF7103TRPBF drive?

    Inductive devices such as fans, heaters, and pumps..

  9. What is the gate drive voltage requirement for the IRF7103TRPBF?

    5V..

  10. In which industries can the IRF7103TRPBF be used?

    Automotive, industrial, and consumer electronics..

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):50V
Current - Continuous Drain (Id) @ 25°C:3A
Rds On (Max) @ Id, Vgs:130mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:290pF @ 25V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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In Stock

$1.08
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Same Series
IRF7103PBF
IRF7103PBF
MOSFET 2N-CH 50V 3A 8-SOIC

Similar Products

Part Number IRF7103TRPBF IRF7503TRPBF IRF7303TRPBF IRF7105TRPBF IRF7104TRPBF IRF7101TRPBF IRF7103QTRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Obsolete Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) N and P-Channel 2 P-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Logic Level Gate Standard Standard Logic Level Gate Logic Level Gate Standard
Drain to Source Voltage (Vdss) 50V 30V 30V 25V 20V 20V 50V
Current - Continuous Drain (Id) @ 25°C 3A 2.4A 4.9A 3.5A, 2.3A 2.3A 3.5A 3A
Rds On (Max) @ Id, Vgs 130mOhm @ 3A, 10V 135mOhm @ 1.7A, 10V 50mOhm @ 2.4A, 10V 100mOhm @ 1A, 10V 250mOhm @ 1A, 10V 100mOhm @ 1.8A, 10V 130mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 1V @ 250µA 1V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V 12nC @ 10V 25nC @ 10V 27nC @ 10V 25nC @ 10V 15nC @ 10V 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 25V 210pF @ 25V 520pF @ 25V 330pF @ 15V 290pF @ 15V 320pF @ 15V 255pF @ 25V
Power - Max 2W 1.25W 2W 2W 2W 2W 2.4W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO Micro8™ 8-SO 8-SO 8-SO 8-SO 8-SO

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