Infineon Technologies IRF7103TRPBF

Manufacturer No:: IRF7103TRPBF
Manufacturer:: Infineon Technologies
Package:: Tape & Reel (TR)
Description:: MOSFET 2N-CH 50V 3A 8-SOIC
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Product Introduction

Overview

The IRF7103TRPBF is a 50V Dual N-Channel IR MOSFET™ produced by Infineon Technologies. It is packaged in a SO-8 (Small Outline 8-pin) surface-mount package, making it suitable for a variety of applications requiring compact and reliable power switching. This MOSFET is optimized for switching frequencies below 100 kHz and is qualified according to JEDEC standards, ensuring high reliability and performance.

Key Specifications

Parameter	Value	Unit
V_DS (Drain-Source Voltage)	50	V
I_D (Continuous Drain Current)	3	A
R_DS(on) (On-Resistance)	0.18	Ω
V_GS(th) (Threshold Voltage)	2-4	V
Package	SO-8	-
Switching Frequency	< 100 kHz	-

Key Features

The IRF7103TRPBF features a planar cell structure, which provides a wide Safe Operating Area (SOA). It is optimized for broad availability from distribution partners and is capable of being wave-soldered, making it versatile for various manufacturing processes. The MOSFET is silicon-optimized for applications switching below 100 kHz and uses an industry-standard surface-mount power package.

Applications

The IRF7103TRPBF is well-suited for driving inductive devices such as fans, heaters, and pumps from microcontrollers. Its 5V gate drive capability makes it an excellent choice for applications requiring low-voltage control. It is also suitable for general-purpose power switching in automotive, industrial, and consumer electronics.

Q & A

What is the maximum drain-source voltage of the IRF7103TRPBF?
50V.
What is the continuous drain current rating of the IRF7103TRPBF?
3A.
What is the typical on-resistance of the IRF7103TRPBF?
0.18 Ω.
What is the package type of the IRF7103TRPBF?
SO-8.
What is the recommended switching frequency range for the IRF7103TRPBF?
Below 100 kHz.
Is the IRF7103TRPBF qualified according to any industry standards?
Yes, it is qualified according to JEDEC standards.
Can the IRF7103TRPBF be wave-soldered?
Yes, it can be wave-soldered..
What types of devices can the IRF7103TRPBF drive?
Inductive devices such as fans, heaters, and pumps..
What is the gate drive voltage requirement for the IRF7103TRPBF?
5V..
In which industries can the IRF7103TRPBF be used?
Automotive, industrial, and consumer electronics..

In Stock

UnitPrice: $1.08

Quantity: 114

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Same Series

Part Number	IRF7103TRPBF	IRF7503TRPBF	IRF7303TRPBF	IRF7105TRPBF	IRF7104TRPBF	IRF7101TRPBF	IRF7103QTRPBF
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Active	Active	Active	Active	Active	Obsolete	Obsolete
FET Type	2 N-Channel (Dual)	2 N-Channel (Dual)	2 N-Channel (Dual)	N and P-Channel	2 P-Channel (Dual)	2 N-Channel (Dual)	2 N-Channel (Dual)
FET Feature	Standard	Logic Level Gate	Standard	Standard	Logic Level Gate	Logic Level Gate	Standard
Drain to Source Voltage (Vdss)	50V	30V	30V	25V	20V	20V	50V
Current - Continuous Drain (Id) @ 25°C	3A	2.4A	4.9A	3.5A, 2.3A	2.3A	3.5A	3A
Rds On (Max) @ Id, Vgs	130mOhm @ 3A, 10V	135mOhm @ 1.7A, 10V	50mOhm @ 2.4A, 10V	100mOhm @ 1A, 10V	250mOhm @ 1A, 10V	100mOhm @ 1.8A, 10V	130mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA	1V @ 250µA	1V @ 250µA	3V @ 250µA	3V @ 250µA	3V @ 250µA	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V	12nC @ 10V	25nC @ 10V	27nC @ 10V	25nC @ 10V	15nC @ 10V	15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 25V	210pF @ 25V	520pF @ 25V	330pF @ 15V	290pF @ 15V	320pF @ 15V	255pF @ 25V
Power - Max	2W	1.25W	2W	2W	2W	2W	2.4W
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO	Micro8™	8-SO	8-SO	8-SO	8-SO	8-SO

Infineon Technologies IRF7103TRPBF

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

Same Series

IRF7103PBF

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FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	50V
Current - Continuous Drain (Id) @ 25°C:	3A
Rds On (Max) @ Id, Vgs:	130mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	290pF @ 25V
Power - Max:	2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO