NTJD4001NT2G
  • Share:

onsemi NTJD4001NT2G

Manufacturer No:
NTJD4001NT2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 0.25A SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTJD4001NT2G is a dual N-channel small signal MOSFET produced by onsemi. This device is packaged in a SOT-363 (SC-88) package and is designed for a variety of applications requiring low power and high efficiency. It features a small footprint, which is approximately 30% smaller than the TSOP-6 package, making it ideal for space-constrained designs. The MOSFET is also ESD protected and AEC Q101 qualified, ensuring reliability and durability in automotive and other demanding environments.

Key Specifications

ParameterSymbolValueUnits
Drain-to-Source VoltageVDSS30V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (TA = 25°C)ID250mA
Continuous Drain Current (TA = 85°C)ID180mA
Power Dissipation (TA = 25°C)PD272mW
Pulsed Drain CurrentIDM600mA
Operating Junction and Storage TemperatureTJ, TSTG-55 to 150°C
Source Current (Body Diode)IS250mA
Lead Temperature for Soldering PurposesTL260°C
Junction-to-Ambient Thermal ResistanceRθJA458°C/W
Junction-to-Lead Thermal ResistanceRθJL252°C/W
Gate Threshold VoltageVGS(TH)0.8 to 1.5V
Drain-to-Source On Resistance (VGS = 4.0 V, ID = 10 mA)RDS(on)1.0 to 1.5Ω
Forward TransconductancegFS80mS

Key Features

  • Low Gate Charge for Fast Switching
  • Small Footprint − 30% Smaller than TSOP−6
  • ESD Protected Gate
  • AEC Q101 Qualified − NVTJD4001N
  • Pb−Free and RoHS Compliant

Applications

  • Low Side Load Switch
  • Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC
  • Buck Converters
  • Level Shifts

Q & A

  1. What is the maximum drain-to-source voltage of the NTJD4001NT2G? The maximum drain-to-source voltage is 30 V.
  2. What is the continuous drain current at 25°C? The continuous drain current at 25°C is 250 mA.
  3. Is the NTJD4001NT2G ESD protected? Yes, the NTJD4001NT2G has ESD protection on the gate.
  4. What is the operating junction temperature range? The operating junction temperature range is -55°C to 150°C.
  5. Is the NTJD4001NT2G AEC Q101 qualified? Yes, the NVTJD4001N version is AEC Q101 qualified.
  6. What are the typical applications of the NTJD4001NT2G? Typical applications include low side load switches, Li-ion battery supplied devices, buck converters, and level shifts.
  7. What is the package type of the NTJD4001NT2G? The package type is SOT-363 (SC-88).
  8. Is the NTJD4001NT2G Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  9. What is the forward transconductance of the NTJD4001NT2G? The forward transconductance is 80 mS.
  10. What is the typical drain-to-source on resistance at VGS = 4.0 V and ID = 10 mA? The typical drain-to-source on resistance is 1.0 to 1.5 Ω.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:250mA
Rds On (Max) @ Id, Vgs:1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id:1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:1.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:33pF @ 5V
Power - Max:272mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
0 Remaining View Similar

In Stock

-
370

Please send RFQ , we will respond immediately.

Same Series
NTJD4001NT1G
NTJD4001NT1G
MOSFET 2N-CH 30V 0.25A SOT-363
NVTJD4001NT1G
NVTJD4001NT1G
MOSFET 2N-CH 30V 0.25A SC-88
NTJD4001NT1
NTJD4001NT1
MOSFET 2N-CH 30V 0.25A SOT363
NVTJD4001NT2G
NVTJD4001NT2G
MOSFET 2N-CH 30V 0.25A SC-88

Similar Products

Part Number NTJD4001NT2G NTJD4401NT2G NTJD4001NT1G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Logic Level Gate Standard
Drain to Source Voltage (Vdss) 30V 20V 30V
Current - Continuous Drain (Id) @ 25°C 250mA 630mA 250mA
Rds On (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4V 375mOhm @ 630mA, 4.5V 1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 100µA 1.5V @ 250µA 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 5V 3nC @ 4.5V 1.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 33pF @ 5V 46pF @ 20V 33pF @ 5V
Power - Max 272mW 270mW 272mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

Related Product By Categories

IRF7343TRPBF
IRF7343TRPBF
Infineon Technologies
MOSFET N/P-CH 55V 8-SOIC
FDMQ86530L
FDMQ86530L
onsemi
MOSFET 4N-CH 60V 8A 12MLP
FDPC8016S
FDPC8016S
onsemi
MOSFET 2N-CH 25V 8PWRCLIP
FDMB2308PZ
FDMB2308PZ
onsemi
MOSFET 2P-CH MLP2X3
CSD88599Q5DC
CSD88599Q5DC
Texas Instruments
MOSFET 2 N-CH 60V 22-VSON-CLIP
NX138BKSF
NX138BKSF
Nexperia USA Inc.
MOSFET 2 N-CH 60V 330MA SOT363
BSS84DWQ-7
BSS84DWQ-7
Diodes Incorporated
BSS FAMILY SOT363 T&R 3K
NX1029XH
NX1029XH
Nexperia USA Inc.
NX1029X/SOT666/SOT6
FDS4897AC
FDS4897AC
onsemi
MOSFET N/P-CH 40V 6.1A/5.2A 8SO
FDG6303N_G
FDG6303N_G
onsemi
INTEGRATED CIRCUIT
2N7002DW-7-G
2N7002DW-7-G
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363
FDMS3669S-SN00345
FDMS3669S-SN00345
onsemi
MOSFET 2N-CH 30V

Related Product By Brand

MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK