FDMA3023PZ
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onsemi FDMA3023PZ

Manufacturer No:
FDMA3023PZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 30V 2.9A 6MICROFET
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The FDMA3023PZ is a dual P-Channel MOSFET designed by onsemi, specifically tailored for ultra-portable applications such as battery charge switches in cellular handsets. This device features two independent P-Channel MOSFETs in a single MicroFET 2x2 package, offering exceptional thermal performance and low on-state resistance to minimize conduction losses. The device supports bi-directional current flow when configured in a common source setup, making it suitable for linear mode applications.

Key Specifications

Parameter Value Unit
VDS (Drain to Source Voltage) −30 V
VGS (Gate to Source Voltage) ±8 V
ID (Drain Current) - Continuous −2.9 A
ID (Drain Current) - Pulsed −6 A
PD (Power Dissipation) at TA = 25°C 1.4 W
TJ (Operating and Storage Junction Temperature Range) −55 to +150 °C
RDS(on) at VGS = −4.5 V, ID = −2.9 A 90
RθJA (Thermal Resistance for Single Operation, Junction to Ambient) 86 / 173 °C/W
RθJA (Thermal Resistance for Dual Operation, Junction to Ambient) 69 / 151 °C/W
ESD Protection > 2 kV (HBM)
Package WDFN6 2x2, 0.65P (Pb-Free, Halide Free, RoHS Compliant)

Key Features

  • Low on-state resistance (RDS(on)) for minimal conduction losses.
  • Bi-directional current flow in common source configuration.
  • Exceptional thermal performance in a compact MicroFET 2x2 package.
  • Low profile with a maximum height of 0.8 mm.
  • HBM ESD protection greater than 2 kV.
  • Pb-Free, Halide Free, and RoHS Compliant.
  • Free from halogenated compounds and antimony oxides.

Applications

The FDMA3023PZ is designed for ultra-portable applications, particularly as a battery charge switch in cellular handsets and other portable devices. It is also suitable for linear mode applications due to its low on-state resistance and bi-directional current flow capabilities.

Q & A

  1. What is the FDMA3023PZ used for?

    The FDMA3023PZ is used as a battery charge switch in cellular handsets and other ultra-portable applications.

  2. What is the maximum drain to source voltage (VDS) for the FDMA3023PZ?

    The maximum drain to source voltage (VDS) is −30 V.

  3. What is the maximum continuous drain current (ID) for the FDMA3023PZ?

    The maximum continuous drain current (ID) is −2.9 A.

  4. What is the thermal resistance (RθJA) for single operation?

    The thermal resistance (RθJA) for single operation is 86 °C/W or 173 °C/W depending on the mounting conditions.

  5. Is the FDMA3023PZ RoHS compliant?
  6. What is the package type of the FDMA3023PZ?

    The package type is WDFN6 2x2, 0.65P.

  7. What is the maximum gate to source voltage (VGS) for the FDMA3023PZ?

    The maximum gate to source voltage (VGS) is ±8 V.

  8. Does the FDMA3023PZ have ESD protection?
  9. What are the operating and storage junction temperature ranges for the FDMA3023PZ?

    The operating and storage junction temperature ranges are −55 to +150 °C.

  10. What is the typical on-state resistance (RDS(on)) at VGS = −4.5 V and ID = −2.9 A?

    The typical on-state resistance (RDS(on)) is 90 mΩ.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:2.9A
Rds On (Max) @ Id, Vgs:90mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:530pF @ 15V
Power - Max:700mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VDFN Exposed Pad
Supplier Device Package:6-MicroFET (2x2)
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In Stock

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Similar Products

Part Number FDMA3023PZ FDMA3027PZ FDMA1023PZ
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Active
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V 20V
Current - Continuous Drain (Id) @ 25°C 2.9A 3.3A 3.7A
Rds On (Max) @ Id, Vgs 90mOhm @ 2.9A, 4.5V 87mOhm @ 3.3A, 10V 72mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 3V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V 10nC @ 10V 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 15V 435pF @ 15V 655pF @ 10V
Power - Max 700mW 700mW 700mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-VDFN Exposed Pad 6-VDFN Exposed Pad 6-VDFN Exposed Pad
Supplier Device Package 6-MicroFET (2x2) 6-MicroFET (2x2) 6-MicroFET (2x2)

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