Overview
The NVMFD5C650NLWFT1G is a dual N-channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features a small footprint of 5x6 mm, making it ideal for compact designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 111 | A |
| Continuous Drain Current (TC = 100°C) | ID | 88 | A |
| Power Dissipation (TC = 25°C) | PD | 125 | W |
| Power Dissipation (TC = 100°C) | PD | 62 | W |
| Pulsed Drain Current (TA = 25°C, tp = 10 μs) | IDM | 502 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to +175 | °C |
| Source Current (Body Diode) | IS | 91 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 186 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Gate Threshold Voltage | VGS(TH) | 1.2 to 2.2 | V |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 20 A) | RDS(on) | 3.5 to 4.2 | mΩ |
Key Features
- Small Footprint (5x6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- Wettable Flank Option for Enhanced Optical Inspection
- AEC-Q101 Qualified and PPAP Capable
- Pb-free and RoHS Compliant
Applications
The NVMFD5C650NLWFT1G is suitable for various high-power applications, including but not limited to:
- Automotive Systems: Due to its AEC-Q101 qualification, it is ideal for automotive power management and control systems.
- Industrial Power Supplies: Its high current handling and low on-resistance make it suitable for high-power industrial applications.
- Motor Control: It can be used in motor control circuits where high efficiency and reliability are required.
- Power Conversion: Suitable for DC-DC converters, power inverters, and other power conversion applications.
Q & A
- What is the maximum drain-to-source voltage of the NVMFD5C650NLWFT1G? The maximum drain-to-source voltage is 60 V.
- What is the continuous drain current at 25°C and 100°C? The continuous drain current is 111 A at 25°C and 88 A at 100°C.
- What is the power dissipation at 25°C and 100°C? The power dissipation is 125 W at 25°C and 62 W at 100°C.
- What is the pulsed drain current for a pulse width of 10 μs? The pulsed drain current is 502 A for a pulse width of 10 μs.
- What is the operating junction and storage temperature range? The operating junction and storage temperature range is −55 to +175°C.
- What is the gate threshold voltage range? The gate threshold voltage range is 1.2 to 2.2 V.
- What is the typical drain-to-source on-resistance at VGS = 10 V and ID = 20 A? The typical drain-to-source on-resistance is 3.5 to 4.2 mΩ.
- Is the NVMFD5C650NLWFT1G Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
- What is the lead temperature for soldering purposes? The lead temperature for soldering purposes is 260°C.
- What are some typical applications for the NVMFD5C650NLWFT1G? Typical applications include automotive systems, industrial power supplies, motor control, and power conversion.
