Overview
The MMDF2C03HDR2G is a dual Power MOSFET from Onsemi, designed for high-efficiency, low-voltage, and high-speed switching applications. This component features a miniature SO-8 surface mount package, making it ideal for space-constrained designs. The MOSFETs in this package are complementary, with one N-channel and one P-channel device, each capable of handling 2 amps and 30 volts. They are known for their ultra-low RDS(on) and true logic level performance, which enhances power efficiency and extends battery life in various applications.
Key Specifications
| Characteristic | Symbol | Value (Unit) | Notes |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 Vdc | |
| Gate-to-Source Voltage | VGS | ±20 Vdc | |
| Continuous Drain Current (N-Channel/P-Channel) | ID | 4.1 A / 3.0 A | |
| Pulsed Drain Current (N-Channel/P-Channel) | IDM | 21 A / 15 A | |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to 150 °C | |
| Total Power Dissipation @ TA= 25°C | PD | 2.0 W | |
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 °C/W | |
| Drain-to-Source On-Resistance (N-Channel/P-Channel) | RDS(on) | 70 mΩ / 200 mΩ | VGS = 10 Vdc, ID = 3.0 A / 2.0 A |
| Gate Threshold Voltage (N-Channel/P-Channel) | VGS(th) | 1.0 to 3.0 Vdc / 1.5 to 2.0 Vdc |
Key Features
- Ultra Low RDS(on): Provides higher efficiency and extends battery life.
- Logic Level Gate Drive: Can be driven by logic ICs.
- Miniature SO-8 Surface Mount Package: Saves board space.
- Diode Characteristics: Diode is characterized for use in bridge circuits with high speed and soft recovery.
- Avalanche Energy Specified: Eliminates guesswork in designs where inductive loads are switched and offers additional safety margin against unexpected voltage transients.
- Pb-Free Device: Compliant with environmental regulations.
Applications
The MMDF2C03HDR2G is suitable for a variety of applications, including:
- DC-DC Converters: High-efficiency power conversion.
- Power Management in Portable and Battery-Powered Products: Such as computers, printers, cellular and cordless phones.
- Low Voltage Motor Controls: In mass storage products like disk drives and tape drives.
Q & A
- What is the maximum drain-to-source voltage for the MMDF2C03HDR2G?
The maximum drain-to-source voltage (VDSS) is 30 Vdc.
- What is the continuous drain current rating for the N-channel and P-channel devices?
The continuous drain current (ID) is 4.1 A for the N-channel and 3.0 A for the P-channel.
- What is the thermal resistance, junction-to-ambient, for this device?
The thermal resistance, junction-to-ambient (RθJA), is 62.5 °C/W.
- Can the MMDF2C03HDR2G be driven by logic ICs?
- What are the typical applications for the MMDF2C03HDR2G?
Typical applications include DC-DC converters, power management in portable and battery-powered products, and low voltage motor controls in mass storage products.
- What is the package type and size of the MMDF2C03HDR2G?
The device comes in a miniature SO-8 surface mount package.
- Is the MMDF2C03HDR2G Pb-free?
- What are the key benefits of the ultra-low RDS(on) in the MMDF2C03HDR2G?
The ultra-low RDS(on) provides higher efficiency and extends battery life in applications.
- How does the avalanche energy specification benefit the design process?
The specified avalanche energy eliminates guesswork in designs where inductive loads are switched and offers an additional safety margin against unexpected voltage transients.
- What are the characteristics of the diode in the MMDF2C03HDR2G?
The diode is characterized for use in bridge circuits with high speed and soft recovery, making it suitable for applications requiring low switching losses.
