BSS138DWQ-7
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Diodes Incorporated BSS138DWQ-7

Manufacturer No:
BSS138DWQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET 2NCH 50V 200MA SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138DWQ-7, produced by Diodes Incorporated, is a N-Channel Enhancement Mode Field Effect Transistor (FET) designed for high-performance applications. This device is part of Diodes Incorporated's extensive range of power management and discrete semiconductor solutions. The BSS138DWQ-7 is known for its low on-resistance, high switching speed, and robust thermal performance, making it an ideal choice for various electronic systems requiring efficient power handling.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)50V
VGS (Gate-Source Voltage)20V
ID (Continuous Drain Current)1.5A
RDS(ON) (On-Resistance)3.5Ω
VGS(th) (Threshold Voltage)0.8 to 2.5V
PD (Power Dissipation)1.25W
TJ (Junction Temperature)-55 to 150°C

Key Features

  • Low On-Resistance: The BSS138DWQ-7 offers a low RDS(ON) of 3.5 Ω, ensuring minimal power loss during operation.
  • High Switching Speed: This FET is designed for high-speed switching applications, making it suitable for use in power management circuits.
  • Robust Thermal Performance: With a power dissipation of 1.25 W, the device can handle demanding thermal conditions.
  • Compact Package: The device is available in a small SOT-363 package, making it ideal for space-constrained designs.
  • Wide Operating Temperature Range: The BSS138DWQ-7 operates over a junction temperature range of -55°C to 150°C, ensuring reliability in various environmental conditions.

Applications

  • Power Management Circuits: Suitable for use in power management ICs, DC-DC converters, and voltage regulators.
  • Switching Circuits: Ideal for high-speed switching applications such as motor control, audio amplifiers, and power supplies.
  • Automotive Systems: Can be used in automotive systems due to its robust thermal performance and wide operating temperature range.
  • Consumer Electronics: Applicable in various consumer electronic devices requiring efficient power handling.

Q & A

  1. What is the maximum drain-source voltage of the BSS138DWQ-7?
    The maximum drain-source voltage (VDS) is 50 V.
  2. What is the continuous drain current rating of the BSS138DWQ-7?
    The continuous drain current (ID) is 1.5 A.
  3. What is the typical on-resistance of the BSS138DWQ-7?
    The typical on-resistance (RDS(ON)) is 3.5 Ω.
  4. What is the threshold voltage range of the BSS138DWQ-7?
    The threshold voltage (VGS(th)) range is from 0.8 V to 2.5 V.
  5. What is the maximum junction temperature of the BSS138DWQ-7?
    The maximum junction temperature (TJ) is 150°C.
  6. What package type is the BSS138DWQ-7 available in?
    The device is available in a SOT-363 package.
  7. What are some common applications of the BSS138DWQ-7?
    Common applications include power management circuits, switching circuits, automotive systems, and consumer electronics.
  8. How much power can the BSS138DWQ-7 dissipate?
    The device can dissipate up to 1.25 W of power.
  9. Is the BSS138DWQ-7 suitable for high-speed switching applications?
    Yes, it is designed for high-speed switching applications.
  10. What is the operating temperature range of the BSS138DWQ-7?
    The operating junction temperature range is from -55°C to 150°C.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):50V
Current - Continuous Drain (Id) @ 25°C:200mA
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 10V
Power - Max:200mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
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Same Series
BSS138DWQ-13
BSS138DWQ-13
MOSFET 2NCH 50V 200MA SOT363

Similar Products

Part Number BSS138DWQ-7 BSS138DW-7 BSS138DWK-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Discontinued at Digi-Key Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Logic Level Gate Standard
Drain to Source Voltage (Vdss) 50V 50V 50V
Current - Continuous Drain (Id) @ 25°C 200mA 200mA 310mA (Ta)
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V 2.6Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - 0.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V 50pF @ 10V 22pF @ 25V
Power - Max 200mW 200mW 330mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363 SOT-363

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