BSS138DWK-7
  • Share:

Diodes Incorporated BSS138DWK-7

Manufacturer No:
BSS138DWK-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET BVDSS: 41V~60V SOT363 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138DWK-7, produced by Diodes Incorporated, is a 50V N-Channel Enhancement Mode MOSFET designed for high-efficiency power-management applications. This MOSFET is optimized to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. It is packaged in a SOT23 case, making it suitable for a variety of compact electronic designs. The device is fully RoHS compliant, halogen and antimony free, and qualified to JEDEC standards for high reliability, including AEC-Q101 standards for automotive applications.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage VDSS 50 V VGS = 0V, ID = 250µA
Gate-Source Voltage (Continuous) VGSS ±20 V
Continuous Drain Current ID 200 mA
Pulsed Drain Current (10µs Pulse Duty Cycle = 1%) IDM 1 A
Gate Threshold Voltage VGS(TH) 0.5 - 1.5 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance RDS(ON) 1.4 - 3.5 Ω VGS = 10V, ID = 0.22A
Power Dissipation PD 300 mW
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Key Features

  • Low On-Resistance: The BSS138DWK-7 features a low RDS(ON) of up to 3.5Ω at VGS = 10V, enhancing efficiency in power management applications.
  • Low Gate Threshold Voltage: With a gate threshold voltage range of 0.5 to 1.5V, this MOSFET is easy to switch on and off.
  • Low Input Capacitance: The device has low input capacitance, which contributes to fast switching speeds.
  • Fast Switching Speed: It offers fast switching times, making it suitable for high-frequency applications.
  • Low Input/Output Leakage: Minimal leakage current ensures low power consumption in standby modes.
  • Environmentally Friendly: The MOSFET is totally lead-free, fully RoHS compliant, and halogen and antimony free, making it a “green” device.
  • High Reliability: Qualified to JEDEC standards and AEC-Q101 for automotive applications, ensuring high reliability in various environments.

Applications

  • Power Management: Ideal for high-efficiency power-management applications due to its low on-resistance and fast switching speed.
  • Systems/Load Switches: Suitable for use in systems and load switches where efficient power handling is critical.
  • Automotive Systems: With its AEC-Q101 qualification, it is suitable for use in automotive systems that require high reliability and robust performance.

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the BSS138DWK-7?

    The maximum drain-source voltage (VDSS) is 50V.

  2. What is the continuous drain current (ID) rating of this MOSFET?

    The continuous drain current (ID) is 200mA.

  3. What is the typical on-resistance (RDS(ON)) of the BSS138DWK-7?

    The typical on-resistance (RDS(ON)) is 1.4 to 3.5Ω at VGS = 10V.

  4. Is the BSS138DWK-7 RoHS compliant?

    Yes, the BSS138DWK-7 is fully RoHS compliant, halogen and antimony free, and lead-free.

  5. What is the operating temperature range of the BSS138DWK-7?

    The operating and storage temperature range is -55 to +150°C.

  6. What package type is the BSS138DWK-7 available in?

    The BSS138DWK-7 is available in a SOT23 package.

  7. What are some typical applications for the BSS138DWK-7?

    Typical applications include power management, systems/load switches, and automotive systems.

  8. What is the gate threshold voltage range of the BSS138DWK-7?

    The gate threshold voltage range is 0.5 to 1.5V.

  9. Is the BSS138DWK-7 qualified for automotive use?

    Yes, it is qualified to AEC-Q101 standards for high reliability in automotive applications.

  10. What is the thermal resistance from junction to ambient (RθJA) of the BSS138DWK-7?

    The thermal resistance from junction to ambient (RθJA) is 417°C/W.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):50V
Current - Continuous Drain (Id) @ 25°C:310mA (Ta)
Rds On (Max) @ Id, Vgs:2.6Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:22pF @ 25V
Power - Max:330mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.06
10,706

Please send RFQ , we will respond immediately.

Same Series
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20LVL0/AA
DD15S20LVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WTS
DD15S20WTS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BSS138DWK-7 BSS138DWQ-7 BSS138DW-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Discontinued at Digi-Key
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Logic Level Gate
Drain to Source Voltage (Vdss) 50V 50V 50V
Current - Continuous Drain (Id) @ 25°C 310mA (Ta) 200mA 200mA
Rds On (Max) @ Id, Vgs 2.6Ohm @ 200mA, 10V 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 10V - -
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V 50pF @ 10V 50pF @ 10V
Power - Max 330mW 200mW 200mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363 SOT-363

Related Product By Categories

FDPC8012S
FDPC8012S
onsemi
MOSFET 2N-CH 25V 13A/26A PWR CLP
2N7002DW
2N7002DW
onsemi
MOSFET 2N-CH 60V 0.115A SC70-6
2N7002DWH6327XTSA1
2N7002DWH6327XTSA1
Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
IRF7342TRPBF
IRF7342TRPBF
Infineon Technologies
MOSFET 2P-CH 55V 3.4A 8-SOIC
2N7002PV,115
2N7002PV,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.35A SOT-666
BSS138BKS,115
BSS138BKS,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.32A 6TSSOP
PMZ370UNE,315
PMZ370UNE,315
Nexperia USA Inc.
0.9A, 30V, N CHANNEL, MOSFET, S
PSMN035-150B
PSMN035-150B
NXP USA Inc.
POWER FIELD-EFFECT TRANSISTOR, 5
STL38DN6F7AG
STL38DN6F7AG
STMicroelectronics
AUTOMOTIVE-GRADE DUAL N-CHANNEL
FDMC8097AC
FDMC8097AC
onsemi
MOSFET N/P-CH 150V
NTZD3154NT2G
NTZD3154NT2G
onsemi
MOSFET 2N-CH 20V 0.54A SOT563
NVMD6N04R2G
NVMD6N04R2G
onsemi
MOSFET 2N-CH 40V 4.6A 8-SOIC

Related Product By Brand

BAV23AQ-7-F
BAV23AQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAS40BRW-7
BAS40BRW-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT363
BAV99T-7-G
BAV99T-7-G
Diodes Incorporated
DIODE ARRAY GP 85V 75MA SOT523
MURS140-13-F
MURS140-13-F
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
BZX84B5V1-7-F
BZX84B5V1-7-F
Diodes Incorporated
DIODE ZENER 5.1V 300MW SOT23
BZT52HC6V8WF-7
BZT52HC6V8WF-7
Diodes Incorporated
DIODE ZENER 6.8V 375MW SOD123F
BZX84B6V2Q-7-F
BZX84B6V2Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZT52HC6V2WF-7
BZT52HC6V2WF-7
Diodes Incorporated
DIODE ZENER 6.2V 375MW SOD123F
BZX84C3V9T-7-F
BZX84C3V9T-7-F
Diodes Incorporated
DIODE ZENER 3.9V 150MW SOT523
BC846AW-7-F
BC846AW-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT323
DMG2305UX-13
DMG2305UX-13
Diodes Incorporated
MOSFET P-CH 20V 4.2A SOT23
74HCT164D14
74HCT164D14
Diodes Incorporated
LOGIC HCT STD DIP-14