Overview
The NTJD4152PT1G is a dual P-channel MOSFET array produced by onsemi. This component is designed for use in a variety of electronic applications where low power consumption and high efficiency are crucial. The MOSFETs are packaged in a compact SOT-363 (SC-88/SC70-6) surface mount package, making them ideal for space-constrained designs.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 20 V |
| ID (Continuous Drain Current) | 880 mA |
| PD (Power Dissipation) | 272 mW |
| VGS(th) (Threshold Voltage) | -0.8 to -3.5 V |
| RDS(on) (On-Resistance) | Typically 150 mΩ at VGS = -4.5 V |
| Package | SOT-363 (SC-88/SC70-6) |
Key Features
- Dual P-channel MOSFET configuration for balanced performance.
- Low on-resistance (RDS(on)) for reduced power losses.
- Compact SOT-363 package suitable for space-constrained designs.
- High threshold voltage (VGS(th)) for reliable switching operations.
- Low power dissipation (PD) for energy-efficient applications.
Applications
The NTJD4152PT1G is suitable for a wide range of applications, including:
- Portable electronics such as smartphones, tablets, and laptops.
- Power management circuits in consumer electronics.
- Automotive systems requiring low power and high efficiency.
- Industrial control systems and IoT devices.
Q & A
- What is the maximum drain-source voltage (VDS) of the NTJD4152PT1G?
The maximum drain-source voltage (VDS) is 20 V. - What is the continuous drain current (ID) rating of this MOSFET?
The continuous drain current (ID) is 880 mA. - What is the typical on-resistance (RDS(on)) of the NTJD4152PT1G?
The typical on-resistance (RDS(on)) is 150 mΩ at VGS = -4.5 V. - In what package is the NTJD4152PT1G available?
The NTJD4152PT1G is available in a SOT-363 (SC-88/SC70-6) surface mount package. - What are some common applications for the NTJD4152PT1G?
Common applications include portable electronics, power management circuits, automotive systems, and industrial control systems. - What is the power dissipation (PD) of the NTJD4152PT1G?
The power dissipation (PD) is 272 mW. - What is the threshold voltage (VGS(th)) range of the NTJD4152PT1G?
The threshold voltage (VGS(th)) range is -0.8 to -3.5 V. - Is the NTJD4152PT1G suitable for high-power applications?
No, the NTJD4152PT1G is designed for low-power applications due to its power dissipation and current ratings. - Where can I find detailed datasheets for the NTJD4152PT1G?
Detailed datasheets can be found on the official onsemi website or through distributors like Digi-Key, Mouser, and Newark. - What is the return policy for the NTJD4152PT1G from distributors?
Distributors like Mouser and Digi-Key offer 30-day returns, while Newark offers a 60-day return policy.
