NTMFD4C86NT1G
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onsemi NTMFD4C86NT1G

Manufacturer No:
NTMFD4C86NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 8DFN
Delivery:
Payment:
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Product Introduction

Overview

The NTMFD4C86NT1G is a dual N-channel MOSFET array manufactured by ON Semiconductor. This component is designed for surface mount applications and is packaged in an 8-DFN (5x6) configuration. Although it is currently marked as obsolete, it was widely used in various electronic circuits requiring high current and low voltage drop. The MOSFETs in this array are known for their high current handling capability and low on-resistance, making them suitable for power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)30V
Continuous Drain Current (Id)11.3A (per MOSFET)
Pulse Drain Current (Id)18.1A (per MOSFET)
On-Resistance (Rds(on))Low on-resistance (specific value not specified in sources)
Package Type8-DFN (5x6)
Pb-free and RoHS ComplianceYes
Life Cycle StatusObsolete

Key Features

  • Dual N-channel MOSFET configuration for enhanced current handling.
  • High continuous and pulse drain current capabilities.
  • Low on-resistance for efficient switching and power management.
  • Surface mount 8-DFN (5x6) package for compact design.
  • Pb-free and RoHS compliant for environmental sustainability.

Applications

The NTMFD4C86NT1G is suitable for a variety of applications including power management, switching circuits, motor control, and other high-current, low-voltage drop requirements. It can be used in automotive systems, industrial control systems, and consumer electronics where efficient power handling is crucial.

Q & A

  1. What is the voltage rating of the NTMFD4C86NT1G MOSFET? The voltage rating (Vds) is 30V.
  2. What is the continuous drain current of the NTMFD4C86NT1G? The continuous drain current (Id) is 11.3A per MOSFET.
  3. What is the pulse drain current of the NTMFD4C86NT1G? The pulse drain current (Id) is 18.1A per MOSFET.
  4. What package type does the NTMFD4C86NT1G use? The NTMFD4C86NT1G is packaged in an 8-DFN (5x6) configuration.
  5. Is the NTMFD4C86NT1G Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  6. What is the current life cycle status of the NTMFD4C86NT1G? The NTMFD4C86NT1G is currently marked as obsolete.
  7. What are some typical applications for the NTMFD4C86NT1G? Typical applications include power management, switching circuits, motor control, and other high-current, low-voltage drop requirements.
  8. Why is the NTMFD4C86NT1G suitable for high-current applications? It is suitable due to its high continuous and pulse drain current capabilities and low on-resistance.
  9. Can the NTMFD4C86NT1G be used in automotive systems? Yes, it can be used in automotive systems due to its robust specifications and compact packaging.
  10. Is the NTMFD4C86NT1G still available for purchase? Although it is marked as obsolete, it may still be available from some distributors or through secondary markets.

Product Attributes

FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:11.3A, 18.1A
Rds On (Max) @ Id, Vgs:5.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1153pF @ 15V
Power - Max:1.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-DFN (5x6)
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Same Series
NTMFD4C86NT3G
NTMFD4C86NT3G
MOSFET 2N-CH 30V 11.3/18.1A 8DFN

Similar Products

Part Number NTMFD4C86NT1G NTMFD4C86NT3G NTMFD4C87NT1G NTMFD4C88NT1G NTMFD4C85NT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical
FET Feature Standard Standard Standard Standard Standard
Drain to Source Voltage (Vdss) 30V 30V 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 11.3A, 18.1A 11.3A, 18.1A 11.7A, 14.9A 11.7A, 14.2A 15.4A, 29.7A
Rds On (Max) @ Id, Vgs 5.4mOhm @ 30A, 10V 5.4mOhm @ 30A, 10V 5.4mOhm @ 30A, 10V 5.4mOhm @ 10A, 10V 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.2nC @ 10V 22.2nC @ 10V 22.2nC @ 10V 22.2nC @ 10V 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1153pF @ 15V 1153pF @ 15V 1252pF @ 15V 1252pF @ 15V 1960pF @ 15V
Power - Max 1.1W 1.1W 1.1W 1.1W 1.13W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) 8-DFN (5x6) 8-DFN (5x6) 8-DFN (5x6) 8-DFN (5x6)

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