NTMFD4C85NT1G
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onsemi NTMFD4C85NT1G

Manufacturer No:
NTMFD4C85NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 8DFN
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The NTMFD4C85NT1G is a high-performance N-Channel MOSFET designed and manufactured by ON Semiconductor. This device is part of ON Semiconductor's extensive range of power MOSFETs, known for their reliability and efficiency in various power management applications. The NTMFD4C85NT1G is packaged in an SO-8FL (8-PowerTDFN) package, which is compact and suitable for surface mount technology (SMT), making it ideal for modern electronic designs where space is a critical factor.

Key Specifications

Parameter Value
Part Number NTMFD4C85NT1G
Manufacturer ON Semiconductor
Package / Case SO-8FL (8-PowerTDFN)
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 25 A, 49 A
Rds On - Drain-Source Resistance 3 mOhms, 4.3 mOhms
Vgs - Gate-Source Voltage -20 V, +20 V
Threshold Voltage 2.1 V
Qg - Gate Charge 32 nC, 39.3 nC
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) +150
Pd - Power Dissipation 1.95 W
Channel Mode Enhancement
Factory Pack Quantity 1500
Unit Weight 0.005686 oz

Key Features

  • High Current Handling: The NTMFD4C85NT1G can handle continuous drain currents of up to 25 A and 49 A, making it suitable for high-power applications.
  • Low On-Resistance: With a drain-source resistance (Rds On) of 3 mOhms and 4.3 mOhms, this MOSFET minimizes energy losses and enhances overall system efficiency.
  • Compact Packaging: The SO-8FL (8-PowerTDFN) package is compact and ideal for surface mount technology, allowing for dense board designs.
  • Wide Operating Temperature Range: The device operates over a temperature range of -55°C to +150°C, ensuring reliability in diverse environmental conditions.
  • Enhancement Mode: The MOSFET operates in enhancement mode, providing a high level of control over the drain current.

Applications

  • Power Management Systems: Suitable for use in power supplies, DC-DC converters, and other power management circuits due to its high current handling and low on-resistance.
  • Automotive Systems: Can be used in automotive applications such as battery management, motor control, and other high-power electronic systems.
  • Industrial Control Systems: Ideal for industrial control systems, including motor drives, power inverters, and other high-power control circuits.
  • Consumer Electronics: Used in various consumer electronics such as gaming consoles, servers, and other high-performance electronic devices.

Q & A

  1. What is the part number of this MOSFET?

    The part number of this MOSFET is NTMFD4C85NT1G.

  2. Who is the manufacturer of the NTMFD4C85NT1G?

    The NTMFD4C85NT1G is manufactured by ON Semiconductor.

  3. What is the package type of the NTMFD4C85NT1G?

    The NTMFD4C85NT1G is packaged in an SO-8FL (8-PowerTDFN) package.

  4. What is the maximum drain-source breakdown voltage of the NTMFD4C85NT1G?

    The maximum drain-source breakdown voltage (Vds) is 30 V.

  5. What are the continuous drain current ratings for the NTMFD4C85NT1G?

    The continuous drain current (Id) ratings are 25 A and 49 A.

  6. What is the typical on-resistance (Rds On) of the NTMFD4C85NT1G?

    The typical on-resistance (Rds On) is 3 mOhms and 4.3 mOhms.

  7. What is the operating temperature range of the NTMFD4C85NT1G?

    The operating temperature range is from -55°C to +150°C.

  8. What is the power dissipation (Pd) of the NTMFD4C85NT1G?

    The power dissipation (Pd) is 1.95 W.

  9. Is the NTMFD4C85NT1G RoHS compliant?

    Yes, the NTMFD4C85NT1G is RoHS compliant.

  10. What is the factory pack quantity for the NTMFD4C85NT1G?

    The factory pack quantity is 1500 units per reel.

Product Attributes

FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:15.4A, 29.7A
Rds On (Max) @ Id, Vgs:3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1960pF @ 15V
Power - Max:1.13W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-DFN (5x6)
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Same Series
NTMFD4C85NT3G
NTMFD4C85NT3G
MOSFET 2N-CH 30V 8DFN

Similar Products

Part Number NTMFD4C85NT1G NTMFD4C85NT3G NTMFD4C87NT1G NTMFD4C88NT1G NTMFD4C86NT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical
FET Feature Standard Standard Standard Standard Standard
Drain to Source Voltage (Vdss) 30V 30V 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 15.4A, 29.7A 15.4A, 29.7A 11.7A, 14.9A 11.7A, 14.2A 11.3A, 18.1A
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V 3mOhm @ 20A, 10V 5.4mOhm @ 30A, 10V 5.4mOhm @ 10A, 10V 5.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V 32nC @ 10V 22.2nC @ 10V 22.2nC @ 10V 22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 15V 1960pF @ 15V 1252pF @ 15V 1252pF @ 15V 1153pF @ 15V
Power - Max 1.13W 1.13W 1.1W 1.1W 1.1W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) 8-DFN (5x6) 8-DFN (5x6) 8-DFN (5x6) 8-DFN (5x6)

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