PMGD280UN,115
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Nexperia USA Inc. PMGD280UN,115

Manufacturer No:
PMGD280UN,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 20V 0.87A 6TSSOP
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The PMGD280UN,115 is a dual N-channel TrenchMOS ultra low level Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This device is designed using TrenchMOS technology and is packaged in a plastic case. It operates in enhancement mode, making it suitable for a variety of low-voltage applications. The PMGD280UN,115 is known for its high efficiency, low on-state resistance, and fast switching times, which are critical for modern electronic systems.

Key Specifications

ParameterValue
TypeDual N-channel TrenchMOS FET
PackagePlastic package
Drain-Source Voltage (Vds)20 V
Gate-Source Voltage (Vgs)±8 V
Continuous Drain Current (Id)1.5 A
On-State Resistance (Rds(on))Typically 0.18 Ω at Vgs = 4.5 V
Threshold Voltage (Vth)Typically 0.5 V
Operating Temperature Range-55°C to 150°C
RoHS ComplianceYes
Halogen-FreeYes

Key Features

  • Ultra low on-state resistance (Rds(on)) for high efficiency
  • Fast switching times for high-frequency applications
  • Enhancement mode operation for low-voltage control
  • Lead-free and halogen-free, compliant with RoHS and Nexperia's halogen-free definition
  • Wide operating temperature range from -55°C to 150°C

Applications

The PMGD280UN,115 is suitable for a range of applications, including but not limited to:

  • Power management in portable electronics
  • DC-DC converters and power supplies
  • Motor control and drive systems
  • Audio and video equipment
  • Automotive and industrial control systems

Q & A

  1. What is the PMGD280UN,115? The PMGD280UN,115 is a dual N-channel TrenchMOS ultra low level Field-Effect Transistor (FET) manufactured by Nexperia USA Inc.
  2. What is the maximum drain-source voltage (Vds) of the PMGD280UN,115? The maximum drain-source voltage (Vds) is 20 V.
  3. What is the typical on-state resistance (Rds(on)) of the PMGD280UN,115? The typical on-state resistance (Rds(on)) is 0.18 Ω at Vgs = 4.5 V.
  4. Is the PMGD280UN,115 RoHS compliant? Yes, the PMGD280UN,115 is RoHS compliant.
  5. Is the PMGD280UN,115 halogen-free? Yes, the PMGD280UN,115 is halogen-free according to Nexperia's halogen-free definition.
  6. What is the operating temperature range of the PMGD280UN,115? The operating temperature range is from -55°C to 150°C.
  7. What are some typical applications of the PMGD280UN,115? Typical applications include power management in portable electronics, DC-DC converters, motor control, audio and video equipment, and automotive and industrial control systems.
  8. What is the package type of the PMGD280UN,115? The PMGD280UN,115 is packaged in a plastic case.
  9. What is the continuous drain current (Id) of the PMGD280UN,115? The continuous drain current (Id) is 1.5 A.
  10. What is the threshold voltage (Vth) of the PMGD280UN,115? The threshold voltage (Vth) is typically 0.5 V.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:870mA
Rds On (Max) @ Id, Vgs:340mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.89nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:45pF @ 20V
Power - Max:400mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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