PMGD280UN,115
  • Share:

Nexperia USA Inc. PMGD280UN,115

Manufacturer No:
PMGD280UN,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 20V 0.87A 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMGD280UN,115 is a dual N-channel TrenchMOS ultra low level Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This device is designed using TrenchMOS technology and is packaged in a plastic case. It operates in enhancement mode, making it suitable for a variety of low-voltage applications. The PMGD280UN,115 is known for its high efficiency, low on-state resistance, and fast switching times, which are critical for modern electronic systems.

Key Specifications

ParameterValue
TypeDual N-channel TrenchMOS FET
PackagePlastic package
Drain-Source Voltage (Vds)20 V
Gate-Source Voltage (Vgs)±8 V
Continuous Drain Current (Id)1.5 A
On-State Resistance (Rds(on))Typically 0.18 Ω at Vgs = 4.5 V
Threshold Voltage (Vth)Typically 0.5 V
Operating Temperature Range-55°C to 150°C
RoHS ComplianceYes
Halogen-FreeYes

Key Features

  • Ultra low on-state resistance (Rds(on)) for high efficiency
  • Fast switching times for high-frequency applications
  • Enhancement mode operation for low-voltage control
  • Lead-free and halogen-free, compliant with RoHS and Nexperia's halogen-free definition
  • Wide operating temperature range from -55°C to 150°C

Applications

The PMGD280UN,115 is suitable for a range of applications, including but not limited to:

  • Power management in portable electronics
  • DC-DC converters and power supplies
  • Motor control and drive systems
  • Audio and video equipment
  • Automotive and industrial control systems

Q & A

  1. What is the PMGD280UN,115? The PMGD280UN,115 is a dual N-channel TrenchMOS ultra low level Field-Effect Transistor (FET) manufactured by Nexperia USA Inc.
  2. What is the maximum drain-source voltage (Vds) of the PMGD280UN,115? The maximum drain-source voltage (Vds) is 20 V.
  3. What is the typical on-state resistance (Rds(on)) of the PMGD280UN,115? The typical on-state resistance (Rds(on)) is 0.18 Ω at Vgs = 4.5 V.
  4. Is the PMGD280UN,115 RoHS compliant? Yes, the PMGD280UN,115 is RoHS compliant.
  5. Is the PMGD280UN,115 halogen-free? Yes, the PMGD280UN,115 is halogen-free according to Nexperia's halogen-free definition.
  6. What is the operating temperature range of the PMGD280UN,115? The operating temperature range is from -55°C to 150°C.
  7. What are some typical applications of the PMGD280UN,115? Typical applications include power management in portable electronics, DC-DC converters, motor control, audio and video equipment, and automotive and industrial control systems.
  8. What is the package type of the PMGD280UN,115? The PMGD280UN,115 is packaged in a plastic case.
  9. What is the continuous drain current (Id) of the PMGD280UN,115? The continuous drain current (Id) is 1.5 A.
  10. What is the threshold voltage (Vth) of the PMGD280UN,115? The threshold voltage (Vth) is typically 0.5 V.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:870mA
Rds On (Max) @ Id, Vgs:340mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.89nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:45pF @ 20V
Power - Max:400mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
0 Remaining View Similar

In Stock

$0.45
1,832

Please send RFQ , we will respond immediately.

Related Product By Categories

FDPC8014S
FDPC8014S
onsemi
MOSFET 2N-CH 25V 8PWRCLIP
ECH8667-TL-HX-SA
ECH8667-TL-HX-SA
Sanyo
P-CHANNEL SILICON MOSFET
PMGD780SN,115
PMGD780SN,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.49A 6TSSOP
FDG6301N
FDG6301N
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6
FDG6308P
FDG6308P
onsemi
MOSFET 2P-CH 20V 600MA SC88
PMDXB600UNEL,147
PMDXB600UNEL,147
Nexperia USA Inc.
0.6A, 20V, 2-ELEMENT, N CHANNEL,
PHKD13N03LT,518
PHKD13N03LT,518
NXP USA Inc.
SMALL SIGNAL FIELD-EFFECT TRANSI
NX3020NAKVYL
NX3020NAKVYL
Nexperia USA Inc.
MOSFET 2N-CH 30V 0.2A SOT666
2N7002V-7
2N7002V-7
Diodes Incorporated
MOSFET 2N-CH 60V 0.28A SOT-563
NTMFD4C86NT3G
NTMFD4C86NT3G
onsemi
MOSFET 2N-CH 30V 11.3/18.1A 8DFN
NVMFD5877NLWFT1G
NVMFD5877NLWFT1G
onsemi
MOSFET 2N-CH 60V 6A SO8FL
FDC6333C-G
FDC6333C-G
onsemi
MOSFET N-CH 60V SUPERSOT6

Related Product By Brand

PTVS3V3S1UR,115
PTVS3V3S1UR,115
Nexperia USA Inc.
TVS DIODE 3.3VWM 8VC CFP3
PESD2CANFD27V-QBZ
PESD2CANFD27V-QBZ
Nexperia USA Inc.
TVS DIODE 27VWM 44VC DFN1110D-3
PTVS14VS1UR/8X
PTVS14VS1UR/8X
Nexperia USA Inc.
TVS DIODE 14VWM 23.2VC SOD123W
BZX84-C8V2,235
BZX84-C8V2,235
Nexperia USA Inc.
DIODE ZENER 8.2V 250MW TO236AB
MM3Z3V6T1GX
MM3Z3V6T1GX
Nexperia USA Inc.
VOLTAGE REGULATOR DIODES
BC807RAZ
BC807RAZ
Nexperia USA Inc.
BC807RA/SOT1268/DFN1412-6
PBSS5540Z/ZLX
PBSS5540Z/ZLX
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
74HC4050DB,118
74HC4050DB,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SSOP
74AHC273PW,112
74AHC273PW,112
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20TSSOP
74LVC273D,112
74LVC273D,112
Nexperia USA Inc.
NEXPERIA 74LVC273D - D FLIP-FLOP
HEF4013BTT-Q100J
HEF4013BTT-Q100J
Nexperia USA Inc.
IC FF D-TYPE DUAL 1BIT 14TSSOP
74HCT04PW,118
74HCT04PW,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14TSSOP