Overview
The NTMD4840NR2G is a dual N-channel MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in a space-saving SOIC-8 surface mount package, making it ideal for compact designs. The MOSFET features low RDS(on) to minimize conduction losses, low capacitance to reduce driver losses, and optimized gate charge to minimize switching losses. It is a Pb-free device, ensuring environmental compliance.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 5.5 | A |
| Continuous Drain Current (TA = 70°C) | ID | 4.4 | A |
| Pulsed Drain Current (tp = 10 μs) | IDM | 30 | A |
| Power Dissipation (TA = 25°C) | PD | 1.14 | W |
| Operating Junction and Storage Temperature | TJ, TSTG | −55 to +150 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 6.9 A) | RDS(on) | 16 - 24 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.5 - 3.0 | V |
| Total Gate Charge (VGS = 10 V, VDS = 15 V, ID = 6.9 A) | QG(TOT) | 9.5 | nC |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Dual SOIC-8 surface mount package for space savings
- Pb-free device for environmental compliance
- High continuous and pulsed drain current capabilities
- Wide operating junction and storage temperature range
Applications
- Disk Drives
- DC-DC Converters
- Printers
Q & A
- What is the maximum drain-to-source voltage of the NTMD4840NR2G?
The maximum drain-to-source voltage is 30 V.
- What is the continuous drain current at 25°C and 70°C?
The continuous drain current is 5.5 A at 25°C and 4.4 A at 70°C.
- What is the pulsed drain current for a pulse width of 10 μs?
The pulsed drain current is 30 A for a pulse width of 10 μs.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +150 °C.
- What is the typical drain-to-source on resistance at VGS = 10 V and ID = 6.9 A?
The typical drain-to-source on resistance is between 16 and 24 mΩ.
- What are the key features of the NTMD4840NR2G?
The key features include low RDS(on), low capacitance, optimized gate charge, and a Pb-free dual SOIC-8 package.
- In what applications is the NTMD4840NR2G commonly used?
The NTMD4840NR2G is commonly used in disk drives, DC-DC converters, and printers.
- What is the total gate charge at VGS = 10 V, VDS = 15 V, and ID = 6.9 A?
The total gate charge is 9.5 nC.
- What is the gate threshold voltage range?
The gate threshold voltage range is between 1.5 and 3.0 V.
- Is the NTMD4840NR2G a Pb-free device?
