Overview
The 2N7002DW-13-G is a dual N-channel enhancement mode MOSFET produced by Diodes Incorporated. This component is designed to offer high efficiency and superior switching performance, making it ideal for various power management and control applications. The MOSFET features a low on-state resistance (RDS(ON)), low gate threshold voltage, and fast switching speed, which are crucial for high-performance electronic systems.
Key Specifications
| Parameter | Symbol | Min | Unit | Test Conditions | ||
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | 60 | V | VGS = 0V, ID = 10µA | ||
| Gate Threshold Voltage | VGS(TH) | 1.0 | 2.0 | V | VDS = VGS, ID = 250µA | |
| On-State Drain Current | ID(ON) | 0.5 | 1.0 | A | VGS = 10V, VDS = 7.5V | |
| Static Drain-Source On-Resistance | RDS(ON) | 7.5 | Ω | VGS = 5.0V, ID = 0.05A | ||
| Input Capacitance | Ciss | 22 | 50 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | |
| Output Capacitance | Coss | 11 | 25 | pF | ||
| Reverse Transfer Capacitance | Crss | 2.0 | 5.0 | pF | ||
| Turn-On Delay Time | tD(ON) | 7.0 | 20 | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω | |
| Turn-Off Delay Time | tD(OFF) | 11.0 | 20 | ns | ||
| Thermal Resistance, Junction to Ambient | RθJA | 410 | °C/W | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | +150 | °C |
Key Features
- Dual N-Channel MOSFET: The component features two N-channel MOSFETs in a single package, enhancing functionality and reducing space requirements.
- Low On-Resistance: With a maximum RDS(ON) of 7.5Ω at VGS = 5V, this MOSFET minimizes power losses and improves overall efficiency.
- Low Gate Threshold Voltage: The gate threshold voltage ranges from 1.0V to 2.0V, making it easier to control the MOSFET with low voltage signals.
- Low Input Capacitance: The input capacitance is typically 22pF, which helps in reducing the switching time and improving the overall switching performance.
- Fast Switching Speed: The turn-on and turn-off delay times are typically 7.0ns and 11.0ns, respectively, ensuring fast switching operations.
- Low Input/Output Leakage: The MOSFET has low input/output leakage currents, which helps in reducing power consumption and improving reliability.
- Ultra-Small Surface Mount Package: The component is available in a compact SOT-363 package, making it suitable for space-constrained applications.
- Totally Lead-Free & Fully RoHS Compliant: The device is lead-free, halogen-free, and antimony-free, ensuring compliance with environmental regulations.
- Qualified to AEC-Q101 Standards: This MOSFET is qualified to AEC-Q101 standards, making it suitable for high-reliability automotive applications.
Applications
- Motor Control: The 2N7002DW is suitable for motor control applications due to its high efficiency and fast switching capabilities.
- Power Management Functions: It is ideal for various power management functions, including DC-DC converters, power switches, and voltage regulators.
- Automotive Systems: Qualified to AEC-Q101 standards, this MOSFET can be used in automotive systems that require high reliability and performance.
- General Switching Applications: The component's fast switching speed and low on-resistance make it suitable for general switching applications in electronic devices.
Q & A
- What is the maximum drain-source voltage (VDSS) of the 2N7002DW?
The maximum drain-source voltage (VDSS) is 60V.
- What is the typical gate threshold voltage (VGS(TH)) of this MOSFET?
The typical gate threshold voltage (VGS(TH)) ranges from 1.0V to 2.0V.
- What is the maximum on-state drain current (ID(ON)) at VGS = 10V and VDS = 7.5V?
The maximum on-state drain current (ID(ON)) is 1.0A.
- What is the maximum static drain-source on-resistance (RDS(ON)) at VGS = 5V and ID = 0.05A?
The maximum static drain-source on-resistance (RDS(ON)) is 7.5Ω.
- What are the typical input, output, and reverse transfer capacitances?
The typical input capacitance (Ciss) is 22pF, output capacitance (Coss) is 11pF, and reverse transfer capacitance (Crss) is 2.0pF.
- What are the turn-on and turn-off delay times of the 2N7002DW?
The turn-on delay time (tD(ON)) is typically 7.0ns, and the turn-off delay time (tD(OFF)) is typically 11.0ns.
- What is the thermal resistance, junction to ambient (RθJA), of this MOSFET?
The thermal resistance, junction to ambient (RθJA), is 410°C/W.
- What is the operating and storage temperature range of the 2N7002DW?
The operating and storage temperature range is -55°C to +150°C.
- Is the 2N7002DW RoHS compliant?
- Is the 2N7002DW suitable for automotive applications?
