FDC6333C
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onsemi FDC6333C

Manufacturer No:
FDC6333C
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 30V 2.5A/2A SSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC6333C is a dual N and P-channel PowerTrench MOSFET produced by onsemi. This device is designed to offer exceptional power dissipation in a very small footprint, making it ideal for applications where larger, more expensive packages like SO-8 and TSSOP-8 are impractical. The FDC6333C utilizes onsemi’s advanced PowerTrench process, which minimizes on-state resistance while maintaining superior switching performance. It operates within an operating temperature range of -55 to +150 °C and is available in a SuperSOT-6 package, which is 72% smaller than the SO-8 package and has a low profile of 1 mm thick.

Key Specifications

Attribute Value Unit
Fet Type Dual N/P-Channel
Drain-to-Source Voltage (Vdss) 30V / -30V V
Drain-Source On Resistance (RDS(on)) 95 mΩ @ VGS = 10 V (N-Channel), 150 mΩ @ VGS = 4.5 V (N-Channel), 130 mΩ @ VGS = -10 V (P-Channel), 220 mΩ @ VGS = -4.5 V (P-Channel) mΩ
Rated Power Dissipation 0.7 W W
Gate Charge (Qg) 6.6 nC / 5.7 nC nC
Package Style SuperSOT-6
Mounting Method Surface Mount
Operating Temperature Range -55 to +150 °C °C
Continuous Drain Current (ID) 2.5 A (N-Channel), -2.0 A (P-Channel) A

Key Features

  • High performance trench technology for extremely low RDS(on)
  • Low gate charge
  • SuperSOT-6 package: small footprint (72% smaller than SO-8), low profile (1 mm thick)
  • N-Channel: 2.5 A, 30 V, RDS(on) = 95 mΩ @ VGS = 10 V, RDS(on) = 150 mΩ @ VGS = 4.5 V
  • P-Channel: -2.0 A, 30 V, RDS(on) = 130 mΩ @ VGS = -10 V, RDS(on) = 220 mΩ @ VGS = -4.5 V
  • Pb-Free device

Applications

  • DC/DC converters
  • Load switches
  • LCD display inverters

Q & A

  1. What is the FDC6333C MOSFET?

    The FDC6333C is a dual N and P-channel PowerTrench MOSFET produced by onsemi, designed for high performance and low on-state resistance in a small footprint.

  2. What is the operating temperature range of the FDC6333C?

    The operating temperature range is -55 to +150 °C.

  3. What package style is the FDC6333C available in?

    The FDC6333C is available in a SuperSOT-6 package.

  4. What are the typical applications of the FDC6333C?

    Typical applications include DC/DC converters, load switches, and LCD display inverters.

  5. What are the drain-source on-resistance values for the N and P channels?

    N-Channel: 95 mΩ @ VGS = 10 V, 150 mΩ @ VGS = 4.5 V. P-Channel: 130 mΩ @ VGS = -10 V, 220 mΩ @ VGS = -4.5 V.

  6. What is the continuous drain current rating for the N and P channels?

    N-Channel: 2.5 A, P-Channel: -2.0 A.

  7. Is the FDC6333C a Pb-Free device?
  8. What is the rated power dissipation of the FDC6333C?

    The rated power dissipation is 0.7 W.

  9. What is the gate charge for the FDC6333C?

    The gate charge is 6.6 nC / 5.7 nC.

  10. Why is the SuperSOT-6 package advantageous?

    The SuperSOT-6 package offers a small footprint (72% smaller than SO-8) and a low profile (1 mm thick), making it ideal for space-constrained applications.

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:2.5A, 2A
Rds On (Max) @ Id, Vgs:95mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:282pF @ 15V
Power - Max:700mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:SuperSOT™-6
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