NDC7002N
  • Share:

onsemi NDC7002N

Manufacturer No:
NDC7002N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 50V 0.51A SSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDC7002N is a dual N-Channel enhancement mode power field effect transistor produced by onsemi. It is fabricated using onsemi's proprietary high cell density DMOS technology, designed to minimize on-state resistance, provide rugged and reliable performance, and ensure fast switching. This device is particularly suited for low voltage applications that require a low current high side switch.

Key Specifications

Parameter Symbol Units Min Typ Max
Drain-Source Voltage VDSS V 50
Gate-Source Voltage - Continuous VGSS V 20
Drain Current - Continuous ID A 0.51
Drain Current - Pulsed ID A 1.5
Maximum Power Dissipation PD W 0.96
Operating and Storage Temperature Range TJ, TSTG °C -55 150
Thermal Resistance, Junction-to-Ambient RθJA °C/W 130
Thermal Resistance, Junction-to-Case RθJC °C/W 60
On-State Drain Current ID(on) A 1.5
On-State Resistance RDS(ON) Ω 2
Forward Transconductance gFS mS 400
Input Capacitance Ciss pF 20
Output Capacitance Coss pF 13
Reverse Transfer Capacitance Crss pF 5

Key Features

  • High density cell design for low RDS(ON)
  • Proprietary SuperSOT™-6 package design using copper lead frame for superior thermal and electrical capabilities
  • High saturation current
  • Rugged and reliable performance
  • Fast switching characteristics
  • Pb-free device

Applications

The NDC7002N is particularly suited for low voltage applications requiring a low current high side switch. It is ideal for use in various electronic systems that demand efficient and reliable power management, such as:

  • Power switching circuits
  • Low voltage DC-DC converters
  • Motor control circuits
  • Audio amplifiers
  • General purpose power management in consumer and industrial electronics

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the NDC7002N?

    The maximum drain-source voltage (VDSS) is 50 V.

  2. What is the continuous drain current (ID) rating of the NDC7002N?

    The continuous drain current (ID) rating is 0.51 A.

  3. What is the on-state resistance (RDS(ON)) of the NDC7002N at VGS = 10 V?

    The on-state resistance (RDS(ON)) is 2 Ω at VGS = 10 V.

  4. What is the thermal resistance, junction-to-ambient (RθJA) of the NDC7002N?

    The thermal resistance, junction-to-ambient (RθJA), is 130 °C/W.

  5. What is the operating and storage temperature range for the NDC7002N?

    The operating and storage temperature range is -55°C to 150°C.

  6. What package type is used for the NDC7002N?

    The NDC7002N uses the SuperSOT™-6 package.

  7. Is the NDC7002N a Pb-free device?

    Yes, the NDC7002N is a Pb-free device.

  8. What are the typical turn-on and turn-off times for the NDC7002N?

    The typical turn-on delay time (tD(on)) is 6-20 ns, and the typical turn-off delay time (tD(off)) is 11-20 ns.

  9. What is the forward transconductance (gFS) of the NDC7002N?

    The forward transconductance (gFS) is 400 mS.

  10. What are some common applications for the NDC7002N?

    The NDC7002N is commonly used in power switching circuits, low voltage DC-DC converters, motor control circuits, audio amplifiers, and general purpose power management in consumer and industrial electronics.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):50V
Current - Continuous Drain (Id) @ 25°C:510mA
Rds On (Max) @ Id, Vgs:2Ohm @ 510mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:20pF @ 25V
Power - Max:700mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:SuperSOT™-6
0 Remaining View Similar

In Stock

$0.52
293

Please send RFQ , we will respond immediately.

Same Series
NDC7002N
NDC7002N
MOSFET 2N-CH 50V 0.51A SSOT6

Related Product By Categories

2N7002VA-7
2N7002VA-7
Diodes Incorporated
MOSFET 2N-CH 60V 0.28A SOT-563
2N7002DW
2N7002DW
onsemi
MOSFET 2N-CH 60V 0.115A SC70-6
CSD87313DMST
CSD87313DMST
Texas Instruments
MOSFET 2 N-CHANNEL 30V 8WSON
2N7002DWH6327XTSA1
2N7002DWH6327XTSA1
Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
CSD88584Q5DCT
CSD88584Q5DCT
Texas Instruments
MOSFET 2N-CH 40V 22-VSON-CLIP
PMDPB70XPE,115
PMDPB70XPE,115
Nexperia USA Inc.
MOSFET 2P-CH 20V 3A 6HUSON
NX3008NBKSH
NX3008NBKSH
Nexperia USA Inc.
MOSFET 2 N-CH 30V 350MA 6TSSOP
FDD8424H-F085A
FDD8424H-F085A
Fairchild Semiconductor
P-CHANNEL POWER MOSFET
EFC4C002NLTDG
EFC4C002NLTDG
onsemi
MOSFET 2N-CH 8WLCSP
BSS8402DWQ-13
BSS8402DWQ-13
Diodes Incorporated
BSS FAMILY SOT363 T&R 10K
FDMC8097AC
FDMC8097AC
onsemi
MOSFET N/P-CH 150V
FDG6321C-F169
FDG6321C-F169
onsemi
DUAL N & P CHANNEL DIGITAL FET 2

Related Product By Brand

FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB