Overview
The NDC7002N is a dual N-Channel enhancement mode power field effect transistor produced by onsemi. It is fabricated using onsemi's proprietary high cell density DMOS technology, designed to minimize on-state resistance, provide rugged and reliable performance, and ensure fast switching. This device is particularly suited for low voltage applications that require a low current high side switch.
Key Specifications
Parameter | Symbol | Units | Min | Typ | Max |
---|---|---|---|---|---|
Drain-Source Voltage | VDSS | V | 50 | ||
Gate-Source Voltage - Continuous | VGSS | V | 20 | ||
Drain Current - Continuous | ID | A | 0.51 | ||
Drain Current - Pulsed | ID | A | 1.5 | ||
Maximum Power Dissipation | PD | W | 0.96 | ||
Operating and Storage Temperature Range | TJ, TSTG | °C | -55 | 150 | |
Thermal Resistance, Junction-to-Ambient | RθJA | °C/W | 130 | ||
Thermal Resistance, Junction-to-Case | RθJC | °C/W | 60 | ||
On-State Drain Current | ID(on) | A | 1.5 | ||
On-State Resistance | RDS(ON) | Ω | 2 | ||
Forward Transconductance | gFS | mS | 400 | ||
Input Capacitance | Ciss | pF | 20 | ||
Output Capacitance | Coss | pF | 13 | ||
Reverse Transfer Capacitance | Crss | pF | 5 |
Key Features
- High density cell design for low RDS(ON)
- Proprietary SuperSOT™-6 package design using copper lead frame for superior thermal and electrical capabilities
- High saturation current
- Rugged and reliable performance
- Fast switching characteristics
- Pb-free device
Applications
The NDC7002N is particularly suited for low voltage applications requiring a low current high side switch. It is ideal for use in various electronic systems that demand efficient and reliable power management, such as:
- Power switching circuits
- Low voltage DC-DC converters
- Motor control circuits
- Audio amplifiers
- General purpose power management in consumer and industrial electronics
Q & A
- What is the maximum drain-source voltage (VDSS) of the NDC7002N?
The maximum drain-source voltage (VDSS) is 50 V.
- What is the continuous drain current (ID) rating of the NDC7002N?
The continuous drain current (ID) rating is 0.51 A.
- What is the on-state resistance (RDS(ON)) of the NDC7002N at VGS = 10 V?
The on-state resistance (RDS(ON)) is 2 Ω at VGS = 10 V.
- What is the thermal resistance, junction-to-ambient (RθJA) of the NDC7002N?
The thermal resistance, junction-to-ambient (RθJA), is 130 °C/W.
- What is the operating and storage temperature range for the NDC7002N?
The operating and storage temperature range is -55°C to 150°C.
- What package type is used for the NDC7002N?
The NDC7002N uses the SuperSOT™-6 package.
- Is the NDC7002N a Pb-free device?
Yes, the NDC7002N is a Pb-free device.
- What are the typical turn-on and turn-off times for the NDC7002N?
The typical turn-on delay time (tD(on)) is 6-20 ns, and the typical turn-off delay time (tD(off)) is 11-20 ns.
- What is the forward transconductance (gFS) of the NDC7002N?
The forward transconductance (gFS) is 400 mS.
- What are some common applications for the NDC7002N?
The NDC7002N is commonly used in power switching circuits, low voltage DC-DC converters, motor control circuits, audio amplifiers, and general purpose power management in consumer and industrial electronics.