NDC7002N
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onsemi NDC7002N

Manufacturer No:
NDC7002N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 50V 0.51A SSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDC7002N is a dual N-Channel enhancement mode power field effect transistor produced by onsemi. It is fabricated using onsemi's proprietary high cell density DMOS technology, designed to minimize on-state resistance, provide rugged and reliable performance, and ensure fast switching. This device is particularly suited for low voltage applications that require a low current high side switch.

Key Specifications

Parameter Symbol Units Min Typ Max
Drain-Source Voltage VDSS V 50
Gate-Source Voltage - Continuous VGSS V 20
Drain Current - Continuous ID A 0.51
Drain Current - Pulsed ID A 1.5
Maximum Power Dissipation PD W 0.96
Operating and Storage Temperature Range TJ, TSTG °C -55 150
Thermal Resistance, Junction-to-Ambient RθJA °C/W 130
Thermal Resistance, Junction-to-Case RθJC °C/W 60
On-State Drain Current ID(on) A 1.5
On-State Resistance RDS(ON) Ω 2
Forward Transconductance gFS mS 400
Input Capacitance Ciss pF 20
Output Capacitance Coss pF 13
Reverse Transfer Capacitance Crss pF 5

Key Features

  • High density cell design for low RDS(ON)
  • Proprietary SuperSOT™-6 package design using copper lead frame for superior thermal and electrical capabilities
  • High saturation current
  • Rugged and reliable performance
  • Fast switching characteristics
  • Pb-free device

Applications

The NDC7002N is particularly suited for low voltage applications requiring a low current high side switch. It is ideal for use in various electronic systems that demand efficient and reliable power management, such as:

  • Power switching circuits
  • Low voltage DC-DC converters
  • Motor control circuits
  • Audio amplifiers
  • General purpose power management in consumer and industrial electronics

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the NDC7002N?

    The maximum drain-source voltage (VDSS) is 50 V.

  2. What is the continuous drain current (ID) rating of the NDC7002N?

    The continuous drain current (ID) rating is 0.51 A.

  3. What is the on-state resistance (RDS(ON)) of the NDC7002N at VGS = 10 V?

    The on-state resistance (RDS(ON)) is 2 Ω at VGS = 10 V.

  4. What is the thermal resistance, junction-to-ambient (RθJA) of the NDC7002N?

    The thermal resistance, junction-to-ambient (RθJA), is 130 °C/W.

  5. What is the operating and storage temperature range for the NDC7002N?

    The operating and storage temperature range is -55°C to 150°C.

  6. What package type is used for the NDC7002N?

    The NDC7002N uses the SuperSOT™-6 package.

  7. Is the NDC7002N a Pb-free device?

    Yes, the NDC7002N is a Pb-free device.

  8. What are the typical turn-on and turn-off times for the NDC7002N?

    The typical turn-on delay time (tD(on)) is 6-20 ns, and the typical turn-off delay time (tD(off)) is 11-20 ns.

  9. What is the forward transconductance (gFS) of the NDC7002N?

    The forward transconductance (gFS) is 400 mS.

  10. What are some common applications for the NDC7002N?

    The NDC7002N is commonly used in power switching circuits, low voltage DC-DC converters, motor control circuits, audio amplifiers, and general purpose power management in consumer and industrial electronics.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):50V
Current - Continuous Drain (Id) @ 25°C:510mA
Rds On (Max) @ Id, Vgs:2Ohm @ 510mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:20pF @ 25V
Power - Max:700mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:SuperSOT™-6
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Same Series
NDC7002N
NDC7002N
MOSFET 2N-CH 50V 0.51A SSOT6

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