NVMFD5873NLT1G
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onsemi NVMFD5873NLT1G

Manufacturer No:
NVMFD5873NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 10A SO8FL
Delivery:
Payment:
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Product Introduction

Overview

The NVMFD5873NLT1G is a dual N-channel logic level MOSFET produced by onsemi. This device is designed for high-performance applications requiring compact design and low power losses. It features a small footprint of 5x6 mm in a DFN8 (SO-8FL) package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and suitability for automotive and industrial applications.

Key Specifications

Parameter Value Unit
Drain-to-Source Voltage (VDSS) 60 V
Gate-to-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at Tmb = 25°C 58 A
Continuous Drain Current (ID) at Tmb = 100°C 41 A
Power Dissipation (PD) at Tmb = 25°C 107 W
Power Dissipation (PD) at Tmb = 100°C 54 W
Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 15 A 10.7 - 13
Drain-to-Source On Resistance (RDS(on)) at VGS = 4.5 V, ID = 10 A 13.6 - 16.5
Operating Junction and Storage Temperature (TJ, Tstg) -55 to 175 °C
Source Current (Body Diode) (IS) 58 A
Single Pulse Drain-to-Source Avalanche Energy (EAS) See datasheet for specific conditions J

Key Features

  • Small Footprint: Compact 5x6 mm DFN8 (SO-8FL) package for space-constrained designs.
  • Low RDS(on): Minimizes conduction losses with RDS(on) as low as 10.7 mΩ at VGS = 10 V and ID = 15 A.
  • Low Capacitance: Reduces driver losses with low input, output, and reverse transfer capacitances.
  • Wettable Flanks Option: NVMFD5873NLWF variant offers enhanced optical inspection capabilities.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability and suitability for automotive and industrial applications.
  • Pb-Free Device: Compliant with lead-free requirements.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and robust performance.
  • Industrial Power Management: Ideal for high-power switching applications in industrial settings.
  • Power Supplies: Used in high-efficiency power supply designs where low RDS(on) and low capacitance are crucial.
  • Motor Control: Applicable in motor control circuits requiring high current handling and low power losses.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the NVMFD5873NLT1G?

    The maximum drain-to-source voltage (VDSS) is 60 V.

  2. What is the continuous drain current (ID) at Tmb = 25°C?

    The continuous drain current (ID) at Tmb = 25°C is 58 A.

  3. What is the typical drain-to-source on resistance (RDS(on)) at VGS = 10 V and ID = 15 A?

    The typical drain-to-source on resistance (RDS(on)) at VGS = 10 V and ID = 15 A is 10.7 - 13 mΩ.

  4. Is the NVMFD5873NLT1G AEC-Q101 qualified?

    Yes, the NVMFD5873NLT1G is AEC-Q101 qualified.

  5. What is the operating junction and storage temperature range (TJ, Tstg)?

    The operating junction and storage temperature range (TJ, Tstg) is -55 to 175°C.

  6. Does the NVMFD5873NLT1G have a wettable flanks option?

    Yes, the NVMFD5873NLWF variant offers enhanced optical inspection capabilities with wettable flanks.

  7. What is the package type of the NVMFD5873NLT1G?

    The package type is DFN8 (SO-8FL).

  8. Is the NVMFD5873NLT1G Pb-free?

    Yes, the NVMFD5873NLT1G is a Pb-free device.

  9. What are some typical applications of the NVMFD5873NLT1G?

    Typical applications include automotive systems, industrial power management, power supplies, and motor control.

  10. What is the maximum power dissipation (PD) at Tmb = 25°C?

    The maximum power dissipation (PD) at Tmb = 25°C is 107 W.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:10A
Rds On (Max) @ Id, Vgs:13mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1560pF @ 25V
Power - Max:3.1W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Same Series
NVMFD5873NLWFT1G
NVMFD5873NLWFT1G
MOSFET 2N-CH 60V 10A SO8FL

Similar Products

Part Number NVMFD5873NLT1G NVMFD5877NLT1G NVMFD5875NLT1G NVMFD5853NLT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V 60V 40V
Current - Continuous Drain (Id) @ 25°C 10A 6A 7A 12A
Rds On (Max) @ Id, Vgs 13mOhm @ 15A, 10V 39mOhm @ 7.5A, 10V 33mOhm @ 7.5A, 10V 10mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 3V @ 250µA 3V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30.5nC @ 10V 20nC @ 10V 20nC @ 10V 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1560pF @ 25V 540pF @ 25V 540pF @ 25V 1100pF @ 25V
Power - Max 3.1W 3.2W 3.2W 3W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual) 8-DFN (5x6) Dual Flag (SO8FL-Dual) 8-DFN (5x6) Dual Flag (SO8FL-Dual) 8-DFN (5x6) Dual Flag (SO8FL-Dual)

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