Overview
The NVMFD5873NLT1G is a dual N-channel logic level MOSFET produced by onsemi. This device is designed for high-performance applications requiring compact design and low power losses. It features a small footprint of 5x6 mm in a DFN8 (SO-8FL) package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and suitability for automotive and industrial applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDSS) | 60 | V |
| Gate-to-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at Tmb = 25°C | 58 | A |
| Continuous Drain Current (ID) at Tmb = 100°C | 41 | A |
| Power Dissipation (PD) at Tmb = 25°C | 107 | W |
| Power Dissipation (PD) at Tmb = 100°C | 54 | W |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 15 A | 10.7 - 13 | mΩ |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 4.5 V, ID = 10 A | 13.6 - 16.5 | mΩ |
| Operating Junction and Storage Temperature (TJ, Tstg) | -55 to 175 | °C |
| Source Current (Body Diode) (IS) | 58 | A |
| Single Pulse Drain-to-Source Avalanche Energy (EAS) | See datasheet for specific conditions | J |
Key Features
- Small Footprint: Compact 5x6 mm DFN8 (SO-8FL) package for space-constrained designs.
- Low RDS(on): Minimizes conduction losses with RDS(on) as low as 10.7 mΩ at VGS = 10 V and ID = 15 A.
- Low Capacitance: Reduces driver losses with low input, output, and reverse transfer capacitances.
- Wettable Flanks Option: NVMFD5873NLWF variant offers enhanced optical inspection capabilities.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and suitability for automotive and industrial applications.
- Pb-Free Device: Compliant with lead-free requirements.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and robust performance.
- Industrial Power Management: Ideal for high-power switching applications in industrial settings.
- Power Supplies: Used in high-efficiency power supply designs where low RDS(on) and low capacitance are crucial.
- Motor Control: Applicable in motor control circuits requiring high current handling and low power losses.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NVMFD5873NLT1G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current (ID) at Tmb = 25°C?
The continuous drain current (ID) at Tmb = 25°C is 58 A.
- What is the typical drain-to-source on resistance (RDS(on)) at VGS = 10 V and ID = 15 A?
The typical drain-to-source on resistance (RDS(on)) at VGS = 10 V and ID = 15 A is 10.7 - 13 mΩ.
- Is the NVMFD5873NLT1G AEC-Q101 qualified?
Yes, the NVMFD5873NLT1G is AEC-Q101 qualified.
- What is the operating junction and storage temperature range (TJ, Tstg)?
The operating junction and storage temperature range (TJ, Tstg) is -55 to 175°C.
- Does the NVMFD5873NLT1G have a wettable flanks option?
Yes, the NVMFD5873NLWF variant offers enhanced optical inspection capabilities with wettable flanks.
- What is the package type of the NVMFD5873NLT1G?
The package type is DFN8 (SO-8FL).
- Is the NVMFD5873NLT1G Pb-free?
Yes, the NVMFD5873NLT1G is a Pb-free device.
- What are some typical applications of the NVMFD5873NLT1G?
Typical applications include automotive systems, industrial power management, power supplies, and motor control.
- What is the maximum power dissipation (PD) at Tmb = 25°C?
The maximum power dissipation (PD) at Tmb = 25°C is 107 W.
