2N7002DW-7-G
  • Share:

Diodes Incorporated 2N7002DW-7-G

Manufacturer No:
2N7002DW-7-G
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V SOT-363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002DW-7-G is a dual N-channel enhancement mode MOSFET produced by Diodes Incorporated. This component is part of the 2N7002 series and is designed to offer high efficiency and superior switching performance, making it ideal for various power management applications. The MOSFET is packaged in a compact SOT-363 (SC-70-6, SC-88) surface mount package, which is totally lead-free and fully RoHS compliant.

Key Specifications

Attribute Value Unit
FET Type Dual N-Channel
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance (RDS(ON)) Max 7.5 Ω @ VGS = 5V, ID = 50mA
Continuous Drain Current (ID) @ 25°C 0.23 A
Gate Threshold Voltage (VGS(TH)) Max 2 V @ ID = 250µA
Input Capacitance (Ciss) 50 pF @ VDS = 25V
Power Dissipation Max 200 mW
Operating Temperature -55°C to 150°C °C (TJ)
Package Style SOT-363 (SC-70-6, SC-88)
Mounting Method Surface Mount

Key Features

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable

Applications

  • Motor Control
  • Power Management Functions

Q & A

  1. What is the drain-to-source voltage rating of the 2N7002DW-7-G MOSFET?

    The drain-to-source voltage (Vdss) rating is 60V.

  2. What is the maximum on-state resistance (RDS(ON)) of the 2N7002DW-7-G?

    The maximum on-state resistance (RDS(ON)) is 7.5Ω at VGS = 5V and ID = 50mA.

  3. What is the continuous drain current (ID) rating at 25°C for the 2N7002DW-7-G?

    The continuous drain current (ID) rating at 25°C is 0.23A.

  4. What is the gate threshold voltage (VGS(TH)) of the 2N7002DW-7-G?

    The gate threshold voltage (VGS(TH)) is up to 2V at ID = 250µA.

  5. What is the input capacitance (Ciss) of the 2N7002DW-7-G?

    The input capacitance (Ciss) is 50pF at VDS = 25V.

  6. What is the maximum power dissipation of the 2N7002DW-7-G?

    The maximum power dissipation is 200mW.

  7. What is the operating temperature range for the 2N7002DW-7-G?

    The operating temperature range is -55°C to 150°C (TJ).

  8. What package style is the 2N7002DW-7-G available in?

    The 2N7002DW-7-G is available in the SOT-363 (SC-70-6, SC-88) package.

  9. Is the 2N7002DW-7-G RoHS compliant?

    Yes, the 2N7002DW-7-G is totally lead-free and fully RoHS compliant.

  10. What are some typical applications for the 2N7002DW-7-G?

    Typical applications include motor control and power management functions.

Product Attributes

FET Type:- 
FET Feature:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:- 
Power - Max:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
32

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50/AA
DD26S2S50V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

NTJD4401NT1G
NTJD4401NT1G
onsemi
MOSFET 2N-CH 20V 630MA SOT363
2N7002PS/ZLX
2N7002PS/ZLX
NXP Semiconductors
NEXPERIA 2N7002PS - 60 V, 320 MA
NTJD1155LT1G
NTJD1155LT1G
onsemi
MOSFET N/P-CH 8V 1.3A SOT363
FDS8858CZ
FDS8858CZ
onsemi
MOSFET N/P-CH 30V 8.6/7.3A 8SOIC
IRF7343TRPBF
IRF7343TRPBF
Infineon Technologies
MOSFET N/P-CH 55V 8-SOIC
2N7002PS,115
2N7002PS,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.32A 6TSSOP
STS8DN3LLH5
STS8DN3LLH5
STMicroelectronics
MOSFET 2N-CH 30V 10A 8SO
NTHD4102PT1G
NTHD4102PT1G
onsemi
MOSFET 2P-CH 20V 2.9A CHIPFET
FDMQ8203
FDMQ8203
onsemi
MOSFET 2N/2P-CH 100V/80V 12-MLP
EFC4C002NLTDG
EFC4C002NLTDG
onsemi
MOSFET 2N-CH 8WLCSP
FDMC8097AC
FDMC8097AC
onsemi
MOSFET N/P-CH 150V
FDG6332C-F085
FDG6332C-F085
onsemi
MOSFET N/P-CH 20V SC70-6

Related Product By Brand

BAS40-06Q-7-F
BAS40-06Q-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT23 T&R 3K
BAV23S-7
BAV23S-7
Diodes Incorporated
DIODE ARRAY GP 200V 400MA SOT23
BAT54CT-7
BAT54CT-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT523
BAS40-7-F
BAS40-7-F
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT23-3
BAV21HWF-7
BAV21HWF-7
Diodes Incorporated
DIODE GP 200V 200MA SOD123F
BAT42W-7
BAT42W-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD123
BZX84C6V8S-7
BZX84C6V8S-7
Diodes Incorporated
DIODE ZENER ARRAY 6.8V SOT363
BZX84C39TA
BZX84C39TA
Diodes Incorporated
DIODE ZENER 39V 350MW SOT23-3
BC847BWQ-13-F
BC847BWQ-13-F
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT32
MMBTA63-7-F
MMBTA63-7-F
Diodes Incorporated
TRANS PNP DARL 30V 0.5A SOT23-3
MMBT3904-7
MMBT3904-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT23-3
DMG2305UX-13
DMG2305UX-13
Diodes Incorporated
MOSFET P-CH 20V 4.2A SOT23