Overview
The PMDXB600UNEL,147 is a 20 V, dual N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component utilizes Trench MOSFET technology and is packaged in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. The device is known for its low leakage current, excellent thermal conduction due to an exposed drain pad, and high ElectroStatic Discharge (ESD) protection of over 1 kV HBM. It is designed for various applications requiring efficient and reliable switching performance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type Number | PMDXB600UNEL | - |
| Package | DFN1010B-6 (SOT1216) | - |
| Channel Type | N | - |
| Number of Transistors | 2 | - |
| VDS (Max) | 20 | V |
| VGS (Max) | 8 | V |
| RDSon (Max) @ VGS = 4.5 V; @25°C | 620 | mΩ |
| RDSon (Max) @ VGS = 2.5 V | 850 | mΩ |
| VESD (kV) | 1000 | kV |
| Tj (Max) | 150 | °C |
| ID (Max) | 0.6 | A |
| QGD (Typ) | 0.1 | nC |
| QG(tot) (Typ) @ VGS = 4.5 V | 0.4 | nC |
| Ptot (Max) | 0.265 | W |
| VGSth (Typ) | 0.7 | V |
| Ciss (Typ) | 21.3 | pF |
| Coss (Typ) | 5.4 | pF |
Key Features
- Low Leakage Current: The PMDXB600UNEL,147 features low leakage current, making it suitable for applications requiring minimal power consumption.
- Leadless Ultra Small Package: The component is packaged in a DFN1010B-6 (SOT1216) SMD plastic package, measuring 1.1 × 1.0 × 0.37 mm, which is ideal for space-constrained designs.
- Excellent Thermal Conduction: The exposed drain pad enhances thermal conduction, ensuring efficient heat dissipation.
- High ESD Protection: The device offers ESD protection greater than 1 kV HBM, providing robust protection against electrostatic discharge.
- Low RDSon: With a maximum on-state resistance of 620 mΩ at VGS = 4.5 V and 850 mΩ at VGS = 2.5 V, the component ensures low power losses during operation.
Applications
- Relay Driver: Suitable for driving relays in various applications due to its high current handling and low on-state resistance.
- High-Speed Line Driver: Ideal for high-speed line driving applications requiring fast switching times and low power consumption.
- Low-Side Load Switch: Can be used as a low-side load switch in power management circuits.
- Switching Circuits: Applicable in various switching circuits where efficient and reliable operation is crucial.
- Consumer and Industrial Electronics: From smartphones and tablets to industrial automation, this MOSFET can be integrated into a wide range of devices.
Q & A
- What is the maximum drain-source voltage (VDS) of the PMDXB600UNEL,147?
The maximum drain-source voltage (VDS) is 20 V.
- What is the package type of the PMDXB600UNEL,147?
The component is packaged in a leadless ultra small DFN1010B-6 (SOT1216) SMD plastic package.
- What is the maximum on-state resistance (RDSon) of the PMDXB600UNEL,147 at VGS = 4.5 V?
The maximum on-state resistance (RDSon) at VGS = 4.5 V is 620 mΩ.
- What is the ESD protection level of the PMDXB600UNEL,147?
The device offers ESD protection greater than 1 kV HBM.
- What is the maximum continuous drain current (ID) of the PMDXB600UNEL,147?
The maximum continuous drain current (ID) is 0.6 A.
- What are some common applications of the PMDXB600UNEL,147?
Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
- Is the PMDXB600UNEL,147 RoHS compliant?
Yes, the PMDXB600UNEL,147 is RoHS compliant.
- What is the operating temperature range of the PMDXB600UNEL,147?
The maximum junction temperature (Tj) is 150°C.
- What is the typical gate-source threshold voltage (VGSth) of the PMDXB600UNEL,147?
The typical gate-source threshold voltage (VGSth) is 0.7 V.
- How can I obtain samples of the PMDXB600UNEL,147?
Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.
