NVMFD5C680NLT1G
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onsemi NVMFD5C680NLT1G

Manufacturer No:
NVMFD5C680NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 26A S08FL
Delivery:
Payment:
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Product Introduction

Overview

The NVMFD5C680NLT1G is a dual N-channel power MOSFET produced by onsemi, designed for high-performance applications. This device features a compact 5x6 mm DFN8 package, making it ideal for space-constrained designs. With its low on-resistance (RDS(on)) and minimal gate charge, it is optimized for reducing conduction and driver losses. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and industrial environments. It is also Pb-free and RoHS compliant, aligning with environmental regulations.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS60V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (TC = 25°C)ID26A
Gate Threshold VoltageVGS(TH)1.2 - 2.2V
Drain-to-Source On Resistance (VGS = 10 V, ID = 5 A)RDS(on)23 - 28mΩ
Input CapacitanceCISS350pF
Output CapacitanceCOSS150pF
Reverse Transfer CapacitanceCRSS6pF
Total Gate Charge (VGS = 10 V, VDS = 48 V; ID = 10 A)QG(TOT)5.0nC

Key Features

  • Small Footprint (5x6 mm) for Compact Design
  • Low RDS(on) to Minimize Conduction Losses
  • Low QG and Capacitance to Minimize Driver Losses
  • NVMFD5C680NLWF − Wettable Flank Option for Enhanced Optical Inspection
  • AEC-Q101 Qualified and PPAP Capable
  • Pb-free and RoHS Compliant

Applications

The NVMFD5C680NLT1G is suitable for a variety of high-power applications, including but not limited to:

  • Automotive Systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive systems such as power steering, braking, and other high-current applications.
  • Industrial Power Supplies: Its low on-resistance and high current capability make it a good choice for industrial power supplies and motor control systems.
  • Power Management: It can be used in various power management circuits where high efficiency and reliability are required.

Q & A

  1. What is the maximum drain-to-source voltage of the NVMFD5C680NLT1G?
    The maximum drain-to-source voltage (VDSS) is 60 V.
  2. What is the continuous drain current at 25°C?
    The continuous drain current (ID) at 25°C is 26 A.
  3. What is the typical on-resistance (RDS(on)) at VGS = 10 V and ID = 5 A?
    The typical on-resistance (RDS(on)) is 23 - 28 mΩ.
  4. Is the NVMFD5C680NLT1G AEC-Q101 qualified?
    Yes, the NVMFD5C680NLT1G is AEC-Q101 qualified.
  5. What is the package type of the NVMFD5C680NLT1G?
    The package type is DFN8 (5x6 mm).
  6. Is the NVMFD5C680NLT1G Pb-free and RoHS compliant?
    Yes, it is Pb-free and RoHS compliant.
  7. What is the gate threshold voltage range?
    The gate threshold voltage (VGS(TH)) range is 1.2 - 2.2 V.
  8. What is the total gate charge at VGS = 10 V and VDS = 48 V; ID = 10 A?
    The total gate charge (QG(TOT)) is 5.0 nC.
  9. What are the typical applications of the NVMFD5C680NLT1G?
    Typical applications include automotive systems, industrial power supplies, and power management circuits.
  10. Does the NVMFD5C680NLT1G have a wettable flank option?
    Yes, it has a wettable flank option (NVMFD5C680NLWF) for enhanced optical inspection.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:7.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs:28mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2.2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs:2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:350pF @ 25V
Power - Max:3W (Ta), 19W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Same Series
NVMFD5C680NLT1G
NVMFD5C680NLT1G
MOSFET 2N-CH 60V 26A S08FL

Similar Products

Part Number NVMFD5C680NLT1G NVMFD5C650NLT1G
Manufacturer onsemi onsemi
Product Status Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard
Drain to Source Voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta), 26A (Tc) 21A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs 28mOhm @ 5A, 10V 4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 13µA 2.2V @ 98µA
Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V 2546pF @ 25V
Power - Max 3W (Ta), 19W (Tc) 3.5W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual) 8-DFN (5x6) Dual Flag (SO8FL-Dual)

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