Overview
The NVMFD5C650NLT1G is a dual N-channel MOSFET produced by onsemi, designed for high-performance applications. This device features two independent N-channel MOSFETs in a single 8-PowerTDFN package, making it ideal for space-constrained designs. The MOSFETs are rated for 60V and offer low on-resistance, high current handling, and enhanced thermal performance.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Mode | Enhancement |
| Vds (Drain-Source Voltage) | 60 V |
| Rds(on) (On-Resistance) | 4.2 mΩ (typical) |
| Id (Continuous Drain Current) | 21 A (per channel) |
| Pd (Power Dissipation) | 125 W |
| Tj (Maximum Operating Temperature) | +175 °C |
| Package | 8-PowerTDFN |
| Qualification | AEC-Q101 |
Key Features
- Dual N-channel MOSFET in a single package, reducing board space and increasing design flexibility.
- Low on-resistance (Rds(on)) of 4.2 mΩ, minimizing power losses and improving efficiency.
- High current handling capability of 21 A per channel.
- Enhanced thermal performance due to the 8-PowerTDFN package.
- AEC-Q101 qualified, ensuring reliability and robustness for automotive and other demanding applications.
Applications
The NVMFD5C650NLT1G is suitable for a variety of high-power applications, including:
- Automotive systems: power steering, power windows, and other high-current loads.
- Industrial power supplies and motor control systems.
- Consumer electronics: high-power audio amplifiers and power management systems.
- Rename and renewable energy systems: solar and wind power inverters.
Q & A
- What is the maximum drain-source voltage (Vds) of the NVMFD5C650NLT1G?
The maximum drain-source voltage (Vds) is 60 V. - What is the typical on-resistance (Rds(on)) of the NVMFD5C650NLT1G?
The typical on-resistance (Rds(on)) is 4.2 mΩ. - What is the continuous drain current (Id) rating per channel?
The continuous drain current (Id) rating per channel is 21 A. - What is the maximum operating temperature (Tj) of the NVMFD5C650NLT1G?
The maximum operating temperature (Tj) is +175 °C. - What package type is used for the NVMFD5C650NLT1G?
The package type is 8-PowerTDFN. - Is the NVMFD5C650NLT1G qualified for automotive applications?
Yes, it is AEC-Q101 qualified. - What are some common applications for the NVMFD5C650NLT1G?
Common applications include automotive systems, industrial power supplies, consumer electronics, and renewable energy systems. - How many MOSFETs are included in the NVMFD5C650NLT1G package?
The package includes two independent N-channel MOSFETs. - What is the power dissipation (Pd) rating of the NVMFD5C650NLT1G?
The power dissipation (Pd) rating is 125 W. - Where can I find detailed specifications for the NVMFD5C650NLT1G?
Detailed specifications can be found in the datasheet available on onsemi's official website and other authorized distributors like Mouser Electronics.
