Overview
The NTMFD4C20NT1G is a dual N-channel power MOSFET produced by onsemi. This component is designed to provide a co-packaged power stage solution, minimizing board space and optimizing device performance to reduce power losses. It is housed in a DFN8 package and is Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Unit | FET |
|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V | Q1, Q2 |
| Gate-to-Source Voltage | VGS | ±20 | V | Q1, Q2 |
| Continuous Drain Current (TA = 25°C) | ID | 18 A (Q1), 27 A (Q2) | A | Q1, Q2 |
| Continuous Drain Current (TA = 85°C) | ID | 8.6 A (Q1), 13 A (Q2) | A | Q1, Q2 |
| Power Dissipation (TA = 25°C) | PD | 1.88 W (Q1), 1.97 W (Q2) | W | Q1, Q2 |
| Drain-to-Source On Resistance | RDS(on) | 7.3 mΩ @ 10 V (Q1), 3.4 mΩ @ 10 V (Q2) | mΩ | Q1, Q2 |
| Gate Threshold Voltage | VGS(TH) | 1.3 - 2.1 V | V | Q1, Q2 |
| Operating Junction Temperature | TJ | -55 to +150 °C | °C | Q1, Q2 |
Key Features
- Co-packaged power stage solution to minimize board space.
- Minimized parasitic inductances.
- Optimized devices to reduce power losses.
- Pb-free, halogen-free, and RoHS compliant.
- High current handling: up to 18 A for Q1 and 27 A for Q2 at TA = 25°C.
- Low on-resistance: 7.3 mΩ @ 10 V for Q1 and 3.4 mΩ @ 10 V for Q2.
- Fast switching characteristics with low turn-on and turn-off delay times.
Applications
- DC-DC converters.
- System voltage rails.
- Point of Load (POL) applications.
Q & A
- What is the maximum drain-to-source voltage for the NTMFD4C20NT1G?
The maximum drain-to-source voltage (VDSS) is 30 V for both Q1 and Q2.
- What are the continuous drain current ratings at TA = 25°C and TA = 85°C?
At TA = 25°C, the continuous drain current is 18 A for Q1 and 27 A for Q2. At TA = 85°C, it is 8.6 A for Q1 and 13 A for Q2.
- What is the power dissipation rating at TA = 25°C?
The power dissipation (PD) is 1.88 W for Q1 and 1.97 W for Q2 at TA = 25°C.
- What are the typical values for the drain-to-source on resistance?
The typical drain-to-source on resistance (RDS(on)) is 7.3 mΩ @ 10 V for Q1 and 3.4 mΩ @ 10 V for Q2.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is 1.3 to 2.1 V for both Q1 and Q2.
- What are the operating junction and storage temperature ranges?
The operating junction and storage temperature range is -55 to +150 °C.
- Is the NTMFD4C20NT1G RoHS compliant?
Yes, the NTMFD4C20NT1G is Pb-free, halogen-free, and RoHS compliant.
- What are some typical applications for the NTMFD4C20NT1G?
Typical applications include DC-DC converters, system voltage rails, and Point of Load (POL) applications.
- What is the package type for the NTMFD4C20NT1G?
The NTMFD4C20NT1G is housed in a DFN8 package.
- What are the thermal resistance values for the device?
The junction-to-ambient thermal resistance (RθJA) is 66.5 °C/W for Q1 and 63.3 °C/W for Q2 under steady-state conditions.
