Overview
The NVJD5121NT1G is a dual N-Channel power MOSFET produced by onsemi, designed for high-performance applications requiring low on-resistance and high reliability. This device is part of the NTJD5121N series and is specifically marked with the NVJD prefix, indicating its compliance with automotive and other stringent application requirements, including AEC-Q101 qualification and PPAP capability. The MOSFET features ESD protection and is packaged in a Pb-free SC-88 (SOT-363) case, making it suitable for a wide range of electronic systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 295 | mA |
| Continuous Drain Current (TA = 85°C) | ID | 212 | mA |
| Power Dissipation (TA = 25°C) | PD | 250 | mW |
| Pulsed Drain Current (tp = 10 μs) | IDM | 900 | mA |
| Operating Junction and Storage Temperature | TJ, TSTG | −55 to 150 | °C |
| Source Current (Body Diode) | IS | 210 | mA |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Gate-Source ESD Rating (HBM) | ESDHBM | 2000 | V |
| Gate-Source ESD Rating (MM) | ESDMM | 200 | V |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 500 mA) | RDS(on) | 1.6 Ω | Ω |
| Gate Threshold Voltage | VGS(TH) | 1.0 to 2.5 | V |
Key Features
- Low RDS(on): The NVJD5121NT1G features a low on-resistance, which minimizes power losses and enhances efficiency in high-current applications.
- Low Gate Threshold: With a gate threshold voltage ranging from 1.0 to 2.5 V, this MOSFET is suitable for use with low-voltage control signals.
- Low Input Capacitance: The device has a low input capacitance, which helps in reducing the gate drive requirements and improving switching speeds.
- ESD Protected Gate: The MOSFET includes ESD protection, ensuring robustness against electrostatic discharge.
- AEC-Q101 Qualified and PPAP Capable: The NVJD prefix indicates that this device meets automotive and other stringent application requirements, including AEC-Q101 qualification and PPAP capability.
- Pb-Free Package: The SC-88 (SOT-363) package is lead-free, making it compliant with environmental regulations.
Applications
- Low Side Load Switch: The NVJD5121NT1G is suitable for use in low side load switching applications due to its low on-resistance and high current handling capability.
- DC-DC Converters (Buck and Boost Circuits): This MOSFET is ideal for use in DC-DC converters, including buck and boost circuits, where high efficiency and reliability are critical.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NVJD5121NT1G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current (ID) at 25°C?
The continuous drain current (ID) at 25°C is 295 mA.
- What is the gate threshold voltage (VGS(TH)) range?
The gate threshold voltage (VGS(TH)) range is from 1.0 to 2.5 V.
- Does the NVJD5121NT1G have ESD protection?
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is from −55 to 150°C.
- Is the NVJD5121NT1G AEC-Q101 qualified?
- What is the package type of the NVJD5121NT1G?
The package type is SC-88 (SOT-363) and is Pb-free.
- What are some typical applications for the NVJD5121NT1G?
Typical applications include low side load switching and DC-DC converters (buck and boost circuits).
- What is the maximum power dissipation (PD) at 25°C?
The maximum power dissipation (PD) at 25°C is 250 mW.
- What is the pulsed drain current (IDM) for a pulse width of 10 μs?
The pulsed drain current (IDM) for a pulse width of 10 μs is 900 mA.
