Overview
The NDC7003P is a dual P-Channel Enhancement Mode Power Field Effect Transistor produced by ON Semiconductor. This component utilizes ON Semiconductor's proprietary Trench Technology, enhancing its performance and efficiency. The NDC7003P is packaged in a SuperSOT-6 configuration, making it suitable for a variety of applications requiring compact and reliable power management.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | -60 | V |
| ID (Drain Current) | -0.34 | A |
| PD (Power Dissipation) | 0.96 | W |
| VGS(th) (Gate-Source Threshold Voltage) | -1 to -3 | V |
| RDS(on) (On-Resistance) | Typically 150 mΩ | mΩ |
| Package | SuperSOT-6 |
Key Features
- Dual P-Channel Enhancement Mode Field Effect Transistors
- Produced using ON Semiconductor's proprietary Trench Technology for improved performance and efficiency
- Low on-resistance (RDS(on)) of typically 150 mΩ
- Compact SuperSOT-6 package for space-saving designs
- High drain-source voltage (VDS) of -60V and drain current (ID) of -0.34A
Applications
- Power management in portable electronics and battery-powered devices
- Switching and linear amplification in audio and video equipment
- Automotive systems requiring high reliability and compact design
- Industrial control and automation systems
- General-purpose switching applications where low on-resistance and high efficiency are crucial
Q & A
- What is the NDC7003P?
The NDC7003P is a dual P-Channel Enhancement Mode Power Field Effect Transistor produced by ON Semiconductor.
- What technology is used in the NDC7003P?
The NDC7003P uses ON Semiconductor's proprietary Trench Technology.
- What is the maximum drain-source voltage (VDS) of the NDC7003P?
The maximum drain-source voltage (VDS) is -60V.
- What is the typical on-resistance (RDS(on)) of the NDC7003P?
The typical on-resistance (RDS(on)) is 150 mΩ.
- In what package is the NDC7003P available?
The NDC7003P is available in a SuperSOT-6 package.
- What are some common applications of the NDC7003P?
Common applications include power management in portable electronics, automotive systems, industrial control, and general-purpose switching.
- What is the maximum power dissipation (PD) of the NDC7003P?
The maximum power dissipation (PD) is 0.96W.
- What is the gate-source threshold voltage (VGS(th)) range of the NDC7003P?
The gate-source threshold voltage (VGS(th)) range is -1 to -3V.
- Why is the NDC7003P suitable for compact designs?
The NDC7003P is suitable for compact designs due to its SuperSOT-6 package, which is space-efficient.
- Where can I find detailed specifications for the NDC7003P?
Detailed specifications can be found in the datasheet available on ON Semiconductor's official website or through distributors like TME, Digi-Key, and Mouser.
