Overview
The BD679G is a medium-power silicon NPN Darlington transistor produced by onsemi. This transistor is part of the BD6xx series, which includes devices with various voltage and current ratings. The BD679G is designed for use in general-purpose amplifier applications and is particularly suited for output devices in complementary amplifier circuits.
It features a monolithic construction, high DC current gain, and is RoHS compliant and Pb-free. The device is packaged in a TO-225 case, making it suitable for a variety of power handling requirements.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Collector-Base Voltage | VCBO | 80 | Vdc |
| Emitter-Base Voltage | VEBO | 5.0 | Vdc |
| Collector Current | IC | 4.0 | Adc |
| Base Current | IB | 1.0 | Adc |
| Total Device Dissipation @ TC = 25°C | PD | 40 | W |
| Derate above 25°C | 0.32 | W/°C | |
| Operating and Storage Junction Temperature Range | TJ, Tstg | –55 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 3.13 | °C/W |
| DC Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc) | hFE | 750 | |
| Collector-Emitter Saturation Voltage (IC = 1.5 Adc, IB = 30 mAdc) | VCE(sat) | 2.5 | Vdc |
| Base-Emitter On Voltage (IC = 1.5 Adc, VCE = 3.0 Vdc) | VBE(on) | 2.5 | Vdc |
Key Features
- High DC current gain
- Monolithic construction
- Complementary to BD676, 676A, 678, 678A, 680, 680A, 682 series
- Equivalent to MJE 800, 801, 802, 803 series
- Pb-free and RoHS compliant
- TO-225 package
- Operating and storage junction temperature range: –55 to +150°C
Applications
The BD679G transistor is suitable for a variety of applications, including:
- General-purpose amplifier circuits
- Output devices in complementary amplifier applications
- Power switching and control circuits
- Automotive and industrial control systems
- Audio and power amplifiers
Q & A
- What is the collector-emitter voltage rating of the BD679G transistor?
The collector-emitter voltage rating of the BD679G transistor is 80 Vdc.
- What is the maximum collector current of the BD679G transistor?
The maximum collector current of the BD679G transistor is 4.0 Adc.
- What is the thermal resistance, junction-to-case, of the BD679G transistor?
The thermal resistance, junction-to-case, of the BD679G transistor is 3.13 °C/W.
- Is the BD679G transistor RoHS compliant and Pb-free?
- What is the operating and storage junction temperature range of the BD679G transistor?
The operating and storage junction temperature range of the BD679G transistor is –55 to +150°C.
- What is the DC current gain of the BD679G transistor?
The DC current gain of the BD679G transistor is 750 at IC = 1.5 Adc and VCE = 3.0 Vdc.
- What is the collector-emitter saturation voltage of the BD679G transistor?
The collector-emitter saturation voltage of the BD679G transistor is 2.5 Vdc at IC = 1.5 Adc and IB = 30 mAdc.
- What package type is the BD679G transistor available in?
The BD679G transistor is available in a TO-225 package.
- What are some common applications of the BD679G transistor?
The BD679G transistor is commonly used in general-purpose amplifier circuits, output devices in complementary amplifier applications, power switching and control circuits, and more.
- How should I handle the BD679G transistor to avoid damage?
Avoid exceeding the maximum ratings listed in the data sheet, such as collector-emitter voltage, collector current, and junction temperature, to prevent damage and ensure reliable operation.
