Overview
The NSV1C201MZ4T1G is a low VCE(sat) NPN transistor from onsemi's e2PowerEdge family. This miniature surface mount device is designed for use in low voltage, high speed switching applications where efficient energy control is crucial. It features ultra-low saturation voltage (VCE(sat)) and high current gain capability, making it ideal for various power management and switching applications.
Key Specifications
| Rating | Symbol | Max | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 100 | Vdc |
| Collector-Base Voltage | VCBO | 140 | Vdc |
| Emitter-Base Voltage | VEBO | 7.0 | Vdc |
| Collector Current - Continuous | IC | 2.0 | A |
| Collector Current - Peak | ICM | 3.0 | A |
| Total Device Dissipation (TA = 25°C) | PD | 800 mW | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | 155 °C/W | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Collector-Emitter Saturation Voltage (IC = 2.0 A, IB = 0.200 A) | VCE(sat) | 0.180 | V |
| Base-Emitter Saturation Voltage (IC = 1.0 A, IB = 0.100 A) | VBE(sat) | 1.10 | V |
| Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) | fT | 100 | MHz |
Key Features
- Ultra-low saturation voltage (VCE(sat)) for efficient energy control.
- High current gain capability.
- Pb-free, halogen-free, and RoHS compliant.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- High cutoff frequency (fT) of 100 MHz.
- Low base-emitter turn-on voltage (VBE(on)) of 0.850 V.
Applications
- DC-DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players.
- Low voltage motor controls in mass storage products like disc drives and tape drives.
- Automotive applications including air bag deployment and instrument cluster systems.
- Analog amplifiers due to the linear gain (Beta) characteristics.
Q & A
- What is the maximum collector-emitter voltage of the NSV1C201MZ4T1G transistor?
The maximum collector-emitter voltage (VCEO) is 100 Vdc.
- What is the continuous collector current rating of this transistor?
The continuous collector current (IC) is 2.0 A.
- Is the NSV1C201MZ4T1G transistor RoHS compliant?
- What are the typical applications of the NSV1C201MZ4T1G transistor?
Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive systems.
- What is the cutoff frequency (fT) of the NSV1C201MZ4T1G transistor?
The cutoff frequency (fT) is 100 MHz.
- Is the NSV1C201MZ4T1G suitable for automotive applications?
- What is the base-emitter saturation voltage (VBE(sat)) of the NSV1C201MZ4T1G transistor?
The base-emitter saturation voltage (VBE(sat)) is 1.10 V at IC = 1.0 A and IB = 0.100 A.
- What is the thermal resistance, junction-to-ambient (RJA) of the NSV1C201MZ4T1G transistor?
The thermal resistance, junction-to-ambient (RJA), is 155 °C/W.
- What is the collector-emitter saturation voltage (VCE(sat)) of the NSV1C201MZ4T1G transistor?
The collector-emitter saturation voltage (VCE(sat)) is 0.180 V at IC = 2.0 A and IB = 0.200 A.
- What is the junction and storage temperature range of the NSV1C201MZ4T1G transistor?
The junction and storage temperature range is -55 to +150 °C.
