Overview
The SBC817-40LT1G is a general-purpose NPN silicon transistor produced by onsemi. This transistor is part of the BC817 and SBC817 series, which are known for their reliability and versatility in various electronic applications. The SBC817-40LT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality standards. It is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental regulations.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 45 | V |
| Collector-Base Voltage | VCBO | 50 | V |
| Emitter-Base Voltage | VEBO | 5.0 | V |
| Collector Current - Continuous | IC | 500 mA | mAdc |
| Junction and Storage Temperature | TJ, Tstg | -65 to +150 | °C |
| DC Current Gain (IC = 500 mA, VCE = 1.0 V) | hFE | 250 - 600 | - |
| Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) | VCE(sat) | 0.7 | V |
| Base-Emitter On Voltage (IC = 500 mA, VCE = 1.0 V) | VBE(on) | 1.2 | V |
| Current-Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | 100 | MHz |
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | 10 | pF |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board, TA = 25°C) | RJA | 556 | °C/W |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental compliance.
- High DC current gain (hFE) with a range of 250 to 600 at IC = 500 mA and VCE = 1.0 V.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.7 V at IC = 500 mA and IB = 50 mA.
- Low base-emitter on voltage (VBE(on)) of 1.2 V at IC = 500 mA and VCE = 1.0 V.
- High current-gain bandwidth product (fT) of 100 MHz at IC = 10 mA and VCE = 5.0 Vdc.
- Compact SOT-23 package, ideal for space-constrained designs.
Applications
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in various automotive applications.
- General-purpose amplifiers: Its high DC current gain and low saturation voltage make it ideal for amplifier circuits.
- Switching circuits: The transistor's fast switching times and high current-gain bandwidth product make it suitable for switching applications.
- Consumer electronics: It can be used in a variety of consumer electronic devices due to its reliability and environmental compliance.
- Industrial control systems: Its robustness and high performance make it a good choice for industrial control and automation systems.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the SBC817-40LT1G transistor?
The maximum collector-emitter voltage (VCEO) is 45 V.
- What is the continuous collector current (IC) rating of the SBC817-40LT1G?
The continuous collector current (IC) rating is 500 mA.
- Is the SBC817-40LT1G transistor RoHS compliant?
- What is the typical DC current gain (hFE) of the SBC817-40LT1G at IC = 500 mA and VCE = 1.0 V?
The typical DC current gain (hFE) ranges from 250 to 600.
- What is the collector-emitter saturation voltage (VCE(sat)) of the SBC817-40LT1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.7 V at IC = 500 mA and IB = 50 mA.
- What is the base-emitter on voltage (VBE(on)) of the SBC817-40LT1G?
The base-emitter on voltage (VBE(on)) is 1.2 V at IC = 500 mA and VCE = 1.0 V.
- What is the current-gain bandwidth product (fT) of the SBC817-40LT1G?
The current-gain bandwidth product (fT) is 100 MHz at IC = 10 mA and VCE = 5.0 Vdc.
- What is the thermal resistance, junction-to-ambient (RJA), of the SBC817-40LT1G on an FR-5 board?
The thermal resistance, junction-to-ambient (RJA), is 556 °C/W on an FR-5 board at TA = 25°C.
- In what package is the SBC817-40LT1G transistor available?
The SBC817-40LT1G transistor is available in the SOT-23 package.
- Is the SBC817-40LT1G suitable for automotive applications?
