BC817-16LT1G
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onsemi BC817-16LT1G

Manufacturer No:
BC817-16LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-16LT1G is an NPN bipolar transistor manufactured by onsemi, designed for use in both linear and switching applications. This transistor is housed in the SOT-23 package, making it suitable for lower power surface mount applications. It is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards. The device is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 45 V
Collector-Base Voltage (VCBO) 50 V
Emitter-Base Voltage (VEBO) 5.0 V
Collector Current - Continuous (IC) 500 mA
Collector-Emitter Saturation Voltage (VCE(sat)) 0.7 V
Base-Emitter On Voltage (VBE(on)) 1.2 V
Current Gain (hFE) 100 - 250
Current-Gain Bandwidth Product (fT) 100 MHz
Output Capacitance (Cobo) 10 pF
Delay Time (td) 85 ns
Rise Time (tr) 30 ns
Storage Time (ts) 1000 ns
Fall Time (tf) 300 ns

Key Features

  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
  • Housed in the SOT-23 package, designed for lower power surface mount applications.
  • High current gain (hFE) ranging from 100 to 250.
  • Low collector-emitter saturation voltage (VCE(sat)) of 0.7 V.
  • High current-gain bandwidth product (fT) of 100 MHz.

Applications

  • Linear and switching applications.
  • Steering logic and switching circuits.
  • Automotive control units.
  • Consumer electronics.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BC817-16LT1G transistor?

    The collector-emitter voltage (VCEO) is 45 V.

  2. What is the maximum collector current (IC) for the BC817-16LT1G transistor?

    The maximum collector current (IC) is 500 mA.

  3. Is the BC817-16LT1G transistor RoHS compliant?

    Yes, the BC817-16LT1G transistor is Pb-free, halogen-free, and RoHS compliant.

  4. What is the current gain (hFE) range of the BC817-16LT1G transistor?

    The current gain (hFE) ranges from 100 to 250.

  5. What is the typical collector-emitter saturation voltage (VCE(sat)) of the BC817-16LT1G transistor?

    The typical collector-emitter saturation voltage (VCE(sat)) is 0.7 V.

  6. What is the current-gain bandwidth product (fT) of the BC817-16LT1G transistor?

    The current-gain bandwidth product (fT) is 100 MHz.

  7. In what package is the BC817-16LT1G transistor housed?

    The BC817-16LT1G transistor is housed in the SOT-23 package.

  8. Is the BC817-16LT1G transistor suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

  9. What are some common applications of the BC817-16LT1G transistor?

    Common applications include linear and switching applications, steering logic, automotive control units, and consumer electronics.

  10. What is the delay time (td) of the BC817-16LT1G transistor?

    The delay time (td) is 85 ns.

  11. What is the fall time (tf) of the BC817-16LT1G transistor?

    The fall time (tf) is 300 ns.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Same Series
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Similar Products

Part Number BC817-16LT1G BC817-16LT3G BC817-16LT1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 300 mW 300 mW 300 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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