Overview
The SBC817-25LT1G is a general-purpose NPN silicon transistor produced by onsemi. This transistor is part of the BC817 series, which includes various models such as BC817-16L, BC817-25L, and BC817-40L. The SBC817-25LT1G is specifically designed for applications requiring high reliability and compliance with automotive and industrial standards. It is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent quality and reliability requirements.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 45 | V |
| Collector-Base Voltage | VCBO | - | - | 50 | V |
| Emitter-Base Voltage | VEBO | - | - | 5.0 | V |
| Collector Current - Continuous | IC | - | - | 500 | mAdc |
| Junction and Storage Temperature | TJ, Tstg | -65 | - | 150 | °C |
| DC Current Gain (IC = 100 mA, VCE = 1.0 V) | hFE | 100 | 160 | 250 | - |
| Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) | VCE(sat) | - | - | 0.7 | V |
| Base-Emitter On Voltage (IC = 500 mA, VCE = 1.0 V) | VBE(on) | - | - | 1.2 | V |
| Current-Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | - | - | 100 | MHz |
Key Features
- AEC-Q101 qualified and PPAP capable, ensuring high reliability for automotive and industrial applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant, making it environmentally friendly.
- High DC current gain (hFE) with values ranging from 100 to 250, depending on the collector current.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.7 V, which is beneficial for low-voltage applications.
- Low base-emitter on voltage (VBE(on)) of 1.2 V, contributing to efficient operation.
- High current-gain bandwidth product (fT) of 100 MHz, suitable for high-frequency applications.
- Compact SOT-23 package, ideal for space-constrained designs.
Applications
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in various automotive applications such as power management, signal amplification, and switching circuits.
- Industrial control systems: Its high reliability and robust specifications make it a good choice for industrial control systems, including motor control, power supplies, and sensor interfaces.
- Consumer electronics: It can be used in consumer electronics for general-purpose amplification, switching, and voltage regulation.
- Medical devices: The transistor's high reliability and compliance with stringent standards make it suitable for use in medical devices.
Q & A
- What is the maximum collector-emitter voltage (VCEO) for the SBC817-25LT1G?
The maximum collector-emitter voltage (VCEO) is 45 V.
- What is the continuous collector current (IC) rating for this transistor?
The continuous collector current (IC) rating is 500 mA.
- Is the SBC817-25LT1G RoHS compliant?
- What is the typical DC current gain (hFE) for the SBC817-25LT1G?
The typical DC current gain (hFE) is 160, with a range from 100 to 250.
- What is the collector-emitter saturation voltage (VCE(sat)) for this transistor?
The collector-emitter saturation voltage (VCE(sat)) is 0.7 V.
- What is the base-emitter on voltage (VBE(on)) for the SBC817-25LT1G?
The base-emitter on voltage (VBE(on)) is 1.2 V.
- What is the current-gain bandwidth product (fT) for this transistor?
The current-gain bandwidth product (fT) is 100 MHz.
- In what package is the SBC817-25LT1G available?
The SBC817-25LT1G is available in the SOT-23 package.
- Is the SBC817-25LT1G suitable for high-frequency applications?
- What are the typical operating temperatures for the SBC817-25LT1G?
The junction and storage temperature range is from -65°C to +150°C.
