NTK3043NT1G
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onsemi NTK3043NT1G

Manufacturer No:
NTK3043NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 210MA SOT723
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTK3043NT1G is a surface-mount N-channel power MOSFET designed and manufactured by onsemi. This device is optimized for high-speed switching applications in power electronics, offering a low on-resistance and high current capability. It is particularly suited for power management and voltage regulation due to its efficient and reliable switching performance.

Key Specifications

AttributeValue
FET TypeN-Channel
Drain-to-Source Voltage (Vdss)20 V
Drain-Source On Resistance (Rds(on))3.4 Ω (at Vgs = 4.5 V)
Maximum Drain Current (Id)0.255 A
Maximum Power Dissipation (Pd)0.44 W
Gate-Source Threshold Voltage (Vgs(th))1.3 V
Maximum Gate-Source Voltage (Vgs)10 V
Maximum Junction Temperature (Tj)150 °C
Package StyleSOT-723
Mounting MethodSurface Mount
No. of Pins3

Key Features

  • Low on-resistance of 3.4 Ω at Vgs = 4.5 V, making it suitable for high-power applications.
  • High current capability of up to 0.255 A.
  • Compact SOT-723 package, enabling high-density PCB manufacturing with a 44% smaller footprint and 38% thinner profile compared to SC-89 and SC-89V(BR) packages.
  • Low threshold levels with a Vgs(th) of 1.3 V, ideal for low voltage drive in portable equipment.
  • ESD protection for enhanced reliability.

Applications

The NTK3043NT1G is designed for various power management and voltage regulation applications, including:

  • Portable electronic devices due to its low voltage drive and compact size.
  • Power supplies and DC-DC converters where high efficiency and reliability are crucial.
  • Motor control and power switching circuits requiring high current capability and low on-resistance.

Q & A

  1. Q: What is the maximum drain-to-source voltage of the NTK3043NT1G?
    A: The maximum drain-to-source voltage (Vdss) is 20 V.
  2. Q: What is the typical on-resistance of the NTK3043NT1G?
    A: The typical on-resistance (Rds(on)) is 3.4 Ω at Vgs = 4.5 V.
  3. Q: What is the maximum drain current of the NTK3043NT1G?
    A: The maximum drain current (Id) is 0.255 A.
  4. Q: What is the package style of the NTK3043NT1G?
    A: The package style is SOT-723.
  5. Q: What is the maximum junction temperature of the NTK3043NT1G?
    A: The maximum junction temperature (Tj) is 150 °C.
  6. Q: Is the NTK3043NT1G suitable for high-power applications?
    A: Yes, it is suitable for high-power applications due to its high current capability and low on-resistance.
  7. Q: What is the gate-source threshold voltage of the NTK3043NT1G?
    A: The gate-source threshold voltage (Vgs(th)) is 1.3 V.
  8. Q: Does the NTK3043NT1G have ESD protection?
    A: Yes, it has ESD protection for enhanced reliability.
  9. Q: What are the typical applications of the NTK3043NT1G?
    A: Typical applications include portable electronic devices, power supplies, DC-DC converters, motor control, and power switching circuits.
  10. Q: What is the maximum power dissipation of the NTK3043NT1G?
    A: The maximum power dissipation (Pd) is 0.44 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.65V, 4.5V
Rds On (Max) @ Id, Vgs:3.4Ohm @ 10mA, 4.5V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:11 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-723
Package / Case:SOT-723
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Same Series
NTK3043NT5G
NTK3043NT5G
MOSFET N-CH 20V 210MA SOT723
NTK3043NAT5G
NTK3043NAT5G
MOSFET N-CH 20V 210MA SOT-723

Similar Products

Part Number NTK3043NT1G NTK3043NT1H NTK3043NT5G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V - 20 V
Current - Continuous Drain (Id) @ 25°C 210mA (Ta) - 210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.65V, 4.5V - 1.65V, 4.5V
Rds On (Max) @ Id, Vgs 3.4Ohm @ 10mA, 4.5V - 3.4Ohm @ 10mA, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA - 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±10V - ±10V
Input Capacitance (Ciss) (Max) @ Vds 11 pF @ 10 V - 11 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 310mW (Ta) - 310mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount - Surface Mount
Supplier Device Package SOT-723 - SOT-723
Package / Case SOT-723 - SOT-723

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