Overview
The STF4N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is part of a series that includes the STD4N80K5, STP4N80K5, and STU4N80K5, each available in different packages such as DPAK, TO-220FP, TO-220, and IPAK. The STF4N80K5 is characterized by its low on-resistance and ultra-low gate charge, making it ideal for applications requiring high power density and efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 800 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Drain Current (ID) Continuous at TC = 25 °C | 3 | A |
| Drain Current (ID) Continuous at TC = 100 °C | 1.7 | A |
| Drain Current (IDM) Pulsed | 12 | A |
| Total Dissipation (PTOT) at TC = 25 °C | 20 | W |
| Static Drain-Source On-Resistance (RDS(on)) | 2.5 | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 - 5 | V |
| Turn-on Delay Time (td(on)) | 16.5 | ns |
| Rise Time (tr) | 15 | ns |
| Turn-off Delay Time (td(off)) | 36 | ns |
| Fall Time (tf) | 21 | ns |
Key Features
- Industry’s lowest RDS(on) x area
- Industry’s best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected for enhanced ESD capability
Applications
The STF4N80K5 is suitable for various switching applications where high power density and efficiency are crucial. These include power supplies, motor control, and other high-voltage switching circuits that require low on-resistance and fast switching times.
Q & A
- What is the maximum drain-source voltage of the STF4N80K5? The maximum drain-source voltage (VDS) is 800 V.
- What is the maximum gate-source voltage of the STF4N80K5? The maximum gate-source voltage (VGS) is ±30 V.
- What is the continuous drain current at 25 °C for the STF4N80K5? The continuous drain current (ID) at 25 °C is 3 A.
- What is the total dissipation at 25 °C for the STF4N80K5? The total dissipation (PTOT) at 25 °C is 20 W.
- What is the typical on-resistance of the STF4N80K5? The typical static drain-source on-resistance (RDS(on)) is 2.5 Ω.
- What are the key features of the STF4N80K5? Key features include the industry’s lowest RDS(on) x area, best figure of merit (FoM), ultra-low gate charge, 100% avalanche tested, and Zener-protected.
- In which packages is the STF4N80K5 available? The STF4N80K5 is available in the TO-220FP package.
- What are the typical switching times for the STF4N80K5? The turn-on delay time (td(on)) is 16.5 ns, rise time (tr) is 15 ns, turn-off delay time (td(off)) is 36 ns, and fall time (tf) is 21 ns.
- What is the maximum junction temperature for the STF4N80K5? The maximum junction temperature (Tj) is 150 °C.
- What are some common applications for the STF4N80K5? Common applications include power supplies, motor control, and other high-voltage switching circuits.
