STF8N80K5
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STMicroelectronics STF8N80K5

Manufacturer No:
STF8N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 6A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF8N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This technology is based on a proprietary vertical structure, enhancing the device's performance and efficiency. The MOSFET is housed in a TO-220FP package and is known for its high voltage and current handling capabilities, making it suitable for various power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)800 V
Continuous Drain Current (Id)6 A
On-Resistance (Rds(on))0.76 Ω (typ.) at Vgs = 10 V
PackageTO-220FP
Power Dissipation (Pd)25 W
Threshold Voltage (Vth)3 V to 5 V at Id = 100 μA

Key Features

  • High voltage rating of 800 V, making it suitable for high-power applications.
  • Low on-resistance (Rds(on)) of 0.76 Ω, enhancing efficiency and reducing power losses.
  • High continuous drain current of 6 A, supporting robust current handling.
  • MDmesh™ K5 technology for improved performance and reliability.
  • Zener-protected SuperMESH™ 5 structure for enhanced ruggedness.

Applications

The STF8N80K5 is designed for use in various high-power applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Motor Control and Drives
  • Power Factor Correction (PFC) circuits
  • High-Voltage DC-DC Converters
  • Industrial and Automotive Power Systems

Q & A

  1. What is the voltage rating of the STF8N80K5 MOSFET?
    The voltage rating of the STF8N80K5 MOSFET is 800 V.
  2. What is the continuous drain current of the STF8N80K5?
    The continuous drain current of the STF8N80K5 is 6 A.
  3. What is the typical on-resistance of the STF8N80K5?
    The typical on-resistance (Rds(on)) of the STF8N80K5 is 0.76 Ω at Vgs = 10 V.
  4. In what package is the STF8N80K5 available?
    The STF8N80K5 is available in the TO-220FP package.
  5. What technology is used in the STF8N80K5?
    The STF8N80K5 uses MDmesh™ K5 technology.
  6. What are some common applications for the STF8N80K5?
    The STF8N80K5 is commonly used in SMPS, motor control, PFC circuits, high-voltage DC-DC converters, and industrial and automotive power systems.
  7. What is the power dissipation rating of the STF8N80K5?
    The power dissipation rating of the STF8N80K5 is 25 W.
  8. Is the STF8N80K5 Zener-protected?
    Yes, the STF8N80K5 features a Zener-protected SuperMESH™ 5 structure.
  9. What is the threshold voltage range of the STF8N80K5?
    The threshold voltage range of the STF8N80K5 is 3 V to 5 V at Id = 100 μA.
  10. Is the STF8N80K5 RoHS compliant?
    Yes, the STF8N80K5 is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:16.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 900 V 800 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc) 7A (Tc) 8A (Tc) 2A (Tc) 2.5A (Tc) 3A (Tc) 4A (Ta) 4.5A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 3A, 10V 950mOhm @ 3A, 10V 900mOhm @ 3.5A, 10V - 4.5Ohm @ 1A, 10V 3.5Ohm @ 1A, 10V 2.5Ohm @ 1.5A, 10V 1.75Ohm @ 2A, 10V 1.6Ohm @ 2A, 10V 1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V 16.5 nC @ 10 V 12 nC @ 10 V - 3 nC @ 10 V 9.5 nC @ 10 V 10.5 nC @ 10 V 5 nC @ 10 V 13 nC @ 10 V 13.4 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V 30V ±30V ±30V ±30V 30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 100 V 450 pF @ 100 V 340 pF @ 100 V - 95 pF @ 100 V 130 pF @ 100 V 175 pF @ 100 V 177 pF @ 100 V 270 pF @ 100 V 360 pF @ 100 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 130W (Tc) 20W (Tc) 20W (Tc) 20W (Tc) 20W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP I2PAKFP (TO-281) TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-262-3 Full Pack, I²Pak TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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