STF7N80K5
  • Share:

STMicroelectronics STF7N80K5

Manufacturer No:
STF7N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N CH 800V 6A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF7N80K5 is a very high voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This proprietary vertical structure results in a dramatic reduction in on-resistance and ultra-low gate charge, making it ideal for applications that require superior power density and high efficiency.

Key Specifications

ParameterValueUnit
Order CodeSTF7N80K5
VDS (Drain-Source Voltage)800V
RDS(on) (On-Resistance)1.2Ω
ID (Continuous Drain Current at TC = 25 °C)6A
ID (Continuous Drain Current at TC = 100 °C)3.8A
IDM (Pulsed Drain Current)24A
PTOT (Total Power Dissipation at TC = 25 °C)25W
VGS (Gate-Source Voltage)±30V
Tj (Operating Junction Temperature Range)-55 to 150°C
Tstg (Storage Temperature Range)-55 to 150°C
Rthj-case (Thermal Resistance Junction-Case)5°C/W
Rthj-amb (Thermal Resistance Junction-Ambient)62.5°C/W

Key Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

The STF7N80K5 is particularly suited for switching applications due to its high efficiency, low on-resistance, and ultra-low gate charge.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF7N80K5?
    The maximum drain-source voltage (VDS) is 800 V.
  2. What is the typical on-resistance (RDS(on)) of the STF7N80K5?
    The typical on-resistance (RDS(on)) is 1.2 Ω.
  3. What is the continuous drain current (ID) at TC = 25 °C?
    The continuous drain current (ID) at TC = 25 °C is 6 A.
  4. What is the maximum pulsed drain current (IDM)?
    The maximum pulsed drain current (IDM) is 24 A.
  5. What is the total power dissipation (PTOT) at TC = 25 °C?
    The total power dissipation (PTOT) at TC = 25 °C is 25 W.
  6. What is the gate-source voltage (VGS) range?
    The gate-source voltage (VGS) range is ±30 V.
  7. What is the operating junction temperature range (Tj)?
    The operating junction temperature range (Tj) is -55 to 150 °C.
  8. What is the thermal resistance junction-case (Rthj-case)?
    The thermal resistance junction-case (Rthj-case) is 5 °C/W.
  9. What are the key features of the STF7N80K5?
    The key features include industry’s lowest RDS(on) x area, industry’s best FoM, ultra-low gate charge, 100% avalanche tested, and Zener-protected.
  10. What are the typical applications of the STF7N80K5?
    The STF7N80K5 is typically used in switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13.4 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:360 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$2.56
183

Please send RFQ , we will respond immediately.

Same Series
STFI7N80K5
STFI7N80K5
MOSFET N-CH 800V 6A I2PAKFP

Similar Products

Part Number STF7N80K5 STFI7N80K5 STF8N80K5 STF9N80K5 STF7N90K5 STF2N80K5 STF3N80K5 STF4N80K5 STF5N80K5 STF6N80K5 STF7LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 900 V 800 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc) 6A (Tc) 7A (Tc) 7A (Tc) 2A (Tc) 2.5A (Tc) 3A (Tc) 4A (Ta) 4.5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V 1.2Ohm @ 3A, 10V 950mOhm @ 3A, 10V 900mOhm @ 3.5A, 10V - 4.5Ohm @ 1A, 10V 3.5Ohm @ 1A, 10V 2.5Ohm @ 1.5A, 10V 1.75Ohm @ 2A, 10V 1.6Ohm @ 2A, 10V 1.15Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13.4 nC @ 10 V 13.4 nC @ 10 V 16.5 nC @ 10 V 12 nC @ 10 V - 3 nC @ 10 V 9.5 nC @ 10 V 10.5 nC @ 10 V 5 nC @ 10 V 13 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V 30V ±30V ±30V ±30V 30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 100 V 360 pF @ 100 V 450 pF @ 100 V 340 pF @ 100 V - 95 pF @ 100 V 130 pF @ 100 V 175 pF @ 100 V 177 pF @ 100 V 270 pF @ 100 V 270 pF @ 100 V
FET Feature - - - - - - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W 20W (Tc) 20W (Tc) 20W (Tc) 20W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP I2PAKFP (TO-281) TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-262-3 Full Pack, I²Pak TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

SMP100LC-200
SMP100LC-200
STMicroelectronics
THYRISTOR 200V 400A DO214AA
STPSC10H12CWL
STPSC10H12CWL
STMicroelectronics
DIODE ARRAY SCHOTTKY 1200V TO247
SCT10N120
SCT10N120
STMicroelectronics
SICFET N-CH 1200V 12A HIP247
STM32F423RHT6
STM32F423RHT6
STMicroelectronics
IC MCU 32BIT 1.5MB FLASH 64LQFP
STM32F401CCY6TR
STM32F401CCY6TR
STMicroelectronics
IC MCU 32BIT 256KB FLASH 49WLCSP
STM32L476VGT6U
STM32L476VGT6U
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STLVDS385BTR
STLVDS385BTR
STMicroelectronics
IC DRVR FLAT PANEL DISPL 56TSSOP
VND5E006ASP-E
VND5E006ASP-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 PWRSO16
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC
L78L12ACZ-TR
L78L12ACZ-TR
STMicroelectronics
IC REG LINEAR 12V 100MA TO92-3
L78M05CDT
L78M05CDT
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK
TDA7708LX32
TDA7708LX32
STMicroelectronics
ADD INFOTAINMENT