STF7N80K5
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STMicroelectronics STF7N80K5

Manufacturer No:
STF7N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N CH 800V 6A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF7N80K5 is a very high voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This proprietary vertical structure results in a dramatic reduction in on-resistance and ultra-low gate charge, making it ideal for applications that require superior power density and high efficiency.

Key Specifications

ParameterValueUnit
Order CodeSTF7N80K5
VDS (Drain-Source Voltage)800V
RDS(on) (On-Resistance)1.2Ω
ID (Continuous Drain Current at TC = 25 °C)6A
ID (Continuous Drain Current at TC = 100 °C)3.8A
IDM (Pulsed Drain Current)24A
PTOT (Total Power Dissipation at TC = 25 °C)25W
VGS (Gate-Source Voltage)±30V
Tj (Operating Junction Temperature Range)-55 to 150°C
Tstg (Storage Temperature Range)-55 to 150°C
Rthj-case (Thermal Resistance Junction-Case)5°C/W
Rthj-amb (Thermal Resistance Junction-Ambient)62.5°C/W

Key Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

The STF7N80K5 is particularly suited for switching applications due to its high efficiency, low on-resistance, and ultra-low gate charge.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF7N80K5?
    The maximum drain-source voltage (VDS) is 800 V.
  2. What is the typical on-resistance (RDS(on)) of the STF7N80K5?
    The typical on-resistance (RDS(on)) is 1.2 Ω.
  3. What is the continuous drain current (ID) at TC = 25 °C?
    The continuous drain current (ID) at TC = 25 °C is 6 A.
  4. What is the maximum pulsed drain current (IDM)?
    The maximum pulsed drain current (IDM) is 24 A.
  5. What is the total power dissipation (PTOT) at TC = 25 °C?
    The total power dissipation (PTOT) at TC = 25 °C is 25 W.
  6. What is the gate-source voltage (VGS) range?
    The gate-source voltage (VGS) range is ±30 V.
  7. What is the operating junction temperature range (Tj)?
    The operating junction temperature range (Tj) is -55 to 150 °C.
  8. What is the thermal resistance junction-case (Rthj-case)?
    The thermal resistance junction-case (Rthj-case) is 5 °C/W.
  9. What are the key features of the STF7N80K5?
    The key features include industry’s lowest RDS(on) x area, industry’s best FoM, ultra-low gate charge, 100% avalanche tested, and Zener-protected.
  10. What are the typical applications of the STF7N80K5?
    The STF7N80K5 is typically used in switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13.4 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:360 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STFI7N80K5
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MOSFET N-CH 800V 6A I2PAKFP

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Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 900 V 800 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc) 6A (Tc) 7A (Tc) 7A (Tc) 2A (Tc) 2.5A (Tc) 3A (Tc) 4A (Ta) 4.5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V 1.2Ohm @ 3A, 10V 950mOhm @ 3A, 10V 900mOhm @ 3.5A, 10V - 4.5Ohm @ 1A, 10V 3.5Ohm @ 1A, 10V 2.5Ohm @ 1.5A, 10V 1.75Ohm @ 2A, 10V 1.6Ohm @ 2A, 10V 1.15Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13.4 nC @ 10 V 13.4 nC @ 10 V 16.5 nC @ 10 V 12 nC @ 10 V - 3 nC @ 10 V 9.5 nC @ 10 V 10.5 nC @ 10 V 5 nC @ 10 V 13 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V 30V ±30V ±30V ±30V 30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 100 V 360 pF @ 100 V 450 pF @ 100 V 340 pF @ 100 V - 95 pF @ 100 V 130 pF @ 100 V 175 pF @ 100 V 177 pF @ 100 V 270 pF @ 100 V 270 pF @ 100 V
FET Feature - - - - - - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W 20W (Tc) 20W (Tc) 20W (Tc) 20W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP I2PAKFP (TO-281) TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-262-3 Full Pack, I²Pak TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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