STF7N80K5
  • Share:

STMicroelectronics STF7N80K5

Manufacturer No:
STF7N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N CH 800V 6A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF7N80K5 is a very high voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This proprietary vertical structure results in a dramatic reduction in on-resistance and ultra-low gate charge, making it ideal for applications that require superior power density and high efficiency.

Key Specifications

ParameterValueUnit
Order CodeSTF7N80K5
VDS (Drain-Source Voltage)800V
RDS(on) (On-Resistance)1.2Ω
ID (Continuous Drain Current at TC = 25 °C)6A
ID (Continuous Drain Current at TC = 100 °C)3.8A
IDM (Pulsed Drain Current)24A
PTOT (Total Power Dissipation at TC = 25 °C)25W
VGS (Gate-Source Voltage)±30V
Tj (Operating Junction Temperature Range)-55 to 150°C
Tstg (Storage Temperature Range)-55 to 150°C
Rthj-case (Thermal Resistance Junction-Case)5°C/W
Rthj-amb (Thermal Resistance Junction-Ambient)62.5°C/W

Key Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

The STF7N80K5 is particularly suited for switching applications due to its high efficiency, low on-resistance, and ultra-low gate charge.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF7N80K5?
    The maximum drain-source voltage (VDS) is 800 V.
  2. What is the typical on-resistance (RDS(on)) of the STF7N80K5?
    The typical on-resistance (RDS(on)) is 1.2 Ω.
  3. What is the continuous drain current (ID) at TC = 25 °C?
    The continuous drain current (ID) at TC = 25 °C is 6 A.
  4. What is the maximum pulsed drain current (IDM)?
    The maximum pulsed drain current (IDM) is 24 A.
  5. What is the total power dissipation (PTOT) at TC = 25 °C?
    The total power dissipation (PTOT) at TC = 25 °C is 25 W.
  6. What is the gate-source voltage (VGS) range?
    The gate-source voltage (VGS) range is ±30 V.
  7. What is the operating junction temperature range (Tj)?
    The operating junction temperature range (Tj) is -55 to 150 °C.
  8. What is the thermal resistance junction-case (Rthj-case)?
    The thermal resistance junction-case (Rthj-case) is 5 °C/W.
  9. What are the key features of the STF7N80K5?
    The key features include industry’s lowest RDS(on) x area, industry’s best FoM, ultra-low gate charge, 100% avalanche tested, and Zener-protected.
  10. What are the typical applications of the STF7N80K5?
    The STF7N80K5 is typically used in switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13.4 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:360 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$2.56
183

Please send RFQ , we will respond immediately.

Same Series
STFI7N80K5
STFI7N80K5
MOSFET N-CH 800V 6A I2PAKFP

Similar Products

Part Number STF7N80K5 STFI7N80K5 STF8N80K5 STF9N80K5 STF7N90K5 STF2N80K5 STF3N80K5 STF4N80K5 STF5N80K5 STF6N80K5 STF7LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 900 V 800 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc) 6A (Tc) 7A (Tc) 7A (Tc) 2A (Tc) 2.5A (Tc) 3A (Tc) 4A (Ta) 4.5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V 1.2Ohm @ 3A, 10V 950mOhm @ 3A, 10V 900mOhm @ 3.5A, 10V - 4.5Ohm @ 1A, 10V 3.5Ohm @ 1A, 10V 2.5Ohm @ 1.5A, 10V 1.75Ohm @ 2A, 10V 1.6Ohm @ 2A, 10V 1.15Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13.4 nC @ 10 V 13.4 nC @ 10 V 16.5 nC @ 10 V 12 nC @ 10 V - 3 nC @ 10 V 9.5 nC @ 10 V 10.5 nC @ 10 V 5 nC @ 10 V 13 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V 30V ±30V ±30V ±30V 30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 100 V 360 pF @ 100 V 450 pF @ 100 V 340 pF @ 100 V - 95 pF @ 100 V 130 pF @ 100 V 175 pF @ 100 V 177 pF @ 100 V 270 pF @ 100 V 270 pF @ 100 V
FET Feature - - - - - - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W 20W (Tc) 20W (Tc) 20W (Tc) 20W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP I2PAKFP (TO-281) TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-262-3 Full Pack, I²Pak TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3

Related Product By Brand

STTH1002CG
STTH1002CG
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
STF28NM50N
STF28NM50N
STMicroelectronics
MOSFET N-CH 500V 21A TO220FP
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STM32F407VGT6TR
STM32F407VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32L071RZT6
STM32L071RZT6
STMicroelectronics
IC MCU 32BIT 192KB FLASH 64LQFP
FDA801B-VYT
FDA801B-VYT
STMicroelectronics
IC AMP CLASS D QUAD 50W 64LQFP
LM239DT
LM239DT
STMicroelectronics
IC COMP QUAD LOW PWR 14SOIC
VN750PSTR-E
VN750PSTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VND5E006ASP-E
VND5E006ASP-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 PWRSO16
L7809ABV
L7809ABV
STMicroelectronics
IC REG LINEAR 9V 1.5A TO220AB
LNBH23LQTR
LNBH23LQTR
STMicroelectronics
IC REG CONV SAT TV 1OUT 32QFN
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN