STF7N80K5
  • Share:

STMicroelectronics STF7N80K5

Manufacturer No:
STF7N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N CH 800V 6A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF7N80K5 is a very high voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This proprietary vertical structure results in a dramatic reduction in on-resistance and ultra-low gate charge, making it ideal for applications that require superior power density and high efficiency.

Key Specifications

ParameterValueUnit
Order CodeSTF7N80K5
VDS (Drain-Source Voltage)800V
RDS(on) (On-Resistance)1.2Ω
ID (Continuous Drain Current at TC = 25 °C)6A
ID (Continuous Drain Current at TC = 100 °C)3.8A
IDM (Pulsed Drain Current)24A
PTOT (Total Power Dissipation at TC = 25 °C)25W
VGS (Gate-Source Voltage)±30V
Tj (Operating Junction Temperature Range)-55 to 150°C
Tstg (Storage Temperature Range)-55 to 150°C
Rthj-case (Thermal Resistance Junction-Case)5°C/W
Rthj-amb (Thermal Resistance Junction-Ambient)62.5°C/W

Key Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

The STF7N80K5 is particularly suited for switching applications due to its high efficiency, low on-resistance, and ultra-low gate charge.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF7N80K5?
    The maximum drain-source voltage (VDS) is 800 V.
  2. What is the typical on-resistance (RDS(on)) of the STF7N80K5?
    The typical on-resistance (RDS(on)) is 1.2 Ω.
  3. What is the continuous drain current (ID) at TC = 25 °C?
    The continuous drain current (ID) at TC = 25 °C is 6 A.
  4. What is the maximum pulsed drain current (IDM)?
    The maximum pulsed drain current (IDM) is 24 A.
  5. What is the total power dissipation (PTOT) at TC = 25 °C?
    The total power dissipation (PTOT) at TC = 25 °C is 25 W.
  6. What is the gate-source voltage (VGS) range?
    The gate-source voltage (VGS) range is ±30 V.
  7. What is the operating junction temperature range (Tj)?
    The operating junction temperature range (Tj) is -55 to 150 °C.
  8. What is the thermal resistance junction-case (Rthj-case)?
    The thermal resistance junction-case (Rthj-case) is 5 °C/W.
  9. What are the key features of the STF7N80K5?
    The key features include industry’s lowest RDS(on) x area, industry’s best FoM, ultra-low gate charge, 100% avalanche tested, and Zener-protected.
  10. What are the typical applications of the STF7N80K5?
    The STF7N80K5 is typically used in switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13.4 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:360 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$2.56
183

Please send RFQ , we will respond immediately.

Same Series
STFI7N80K5
STFI7N80K5
MOSFET N-CH 800V 6A I2PAKFP

Similar Products

Part Number STF7N80K5 STFI7N80K5 STF8N80K5 STF9N80K5 STF7N90K5 STF2N80K5 STF3N80K5 STF4N80K5 STF5N80K5 STF6N80K5 STF7LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 900 V 800 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc) 6A (Tc) 7A (Tc) 7A (Tc) 2A (Tc) 2.5A (Tc) 3A (Tc) 4A (Ta) 4.5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V 1.2Ohm @ 3A, 10V 950mOhm @ 3A, 10V 900mOhm @ 3.5A, 10V - 4.5Ohm @ 1A, 10V 3.5Ohm @ 1A, 10V 2.5Ohm @ 1.5A, 10V 1.75Ohm @ 2A, 10V 1.6Ohm @ 2A, 10V 1.15Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13.4 nC @ 10 V 13.4 nC @ 10 V 16.5 nC @ 10 V 12 nC @ 10 V - 3 nC @ 10 V 9.5 nC @ 10 V 10.5 nC @ 10 V 5 nC @ 10 V 13 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V 30V ±30V ±30V ±30V 30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 100 V 360 pF @ 100 V 450 pF @ 100 V 340 pF @ 100 V - 95 pF @ 100 V 130 pF @ 100 V 175 pF @ 100 V 177 pF @ 100 V 270 pF @ 100 V 270 pF @ 100 V
FET Feature - - - - - - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W 20W (Tc) 20W (Tc) 20W (Tc) 20W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP I2PAKFP (TO-281) TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-262-3 Full Pack, I²Pak TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

STPS160H100TV
STPS160H100TV
STMicroelectronics
DIODE MODULE 100V 80A ISOTOP
ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
STM32F207VET6
STM32F207VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
STM32F215ZET6TR
STM32F215ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
TDA7564B
TDA7564B
STMicroelectronics
IC AMP AB QUAD 75W 25FLEXIWATT
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
M27C1001-12B1
M27C1001-12B1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32DIP
TD352IDT
TD352IDT
STMicroelectronics
IC GATE DRVR HIGH-SIDE 8SO
L9950
L9950
STMicroelectronics
IC DRIVER DOOR ACTUATOR PWRSO-36
STM1811LWX7F
STM1811LWX7F
STMicroelectronics
IC SUPERVISOR 1 CHANNEL SOT23-3
L7915CP
L7915CP
STMicroelectronics
IC REG LINEAR -15V 1.5A TO220FP