STD105N10F7AG
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STMicroelectronics STD105N10F7AG

Manufacturer No:
STD105N10F7AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 80A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD105N10F7AG is an automotive-grade N-channel power MOSFET from STMicroelectronics, part of the STripFET F7 series. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features a DPAK package, making it suitable for a variety of automotive and industrial uses.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 100 V
RDS(on) (On-Resistance) 6.8 mΩ
ID (Drain Current) 80 A A
PD (Power Dissipation) 120 W W
Package DPAK -
Avalanche Ruggedness High -

Key Features

  • Low on-resistance (RDS(on)) of 6.8 mΩ, ensuring minimal power loss.
  • High drain current (ID) of 80 A, suitable for high-power applications.
  • High avalanche ruggedness, providing reliability in demanding environments.
  • Automotive-grade, compliant with automotive standards for reliability and durability.
  • DPAK package, offering a compact and efficient design for various applications.

Applications

  • Automotive systems: power steering, power windows, and other high-current applications.
  • Industrial power supplies and motor control systems.
  • High-power switching and DC-DC converters.
  • Electric vehicle (EV) and hybrid electric vehicle (HEV) systems.

Q & A

  1. What is the maximum drain-source voltage of the STD105N10F7AG?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the typical on-resistance of the STD105N10F7AG?

    The typical on-resistance (RDS(on)) is 6.8 mΩ.

  3. What is the maximum drain current of the STD105N10F7AG?

    The maximum drain current (ID) is 80 A.

  4. What package type does the STD105N10F7AG use?

    The STD105N10F7AG uses a DPAK package.

  5. Is the STD105N10F7AG suitable for automotive applications?

    Yes, it is an automotive-grade component.

  6. What is the power dissipation capability of the STD105N10F7AG?

    The power dissipation (PD) is 120 W.

  7. Does the STD105N10F7AG have high avalanche ruggedness?

    Yes, it has high avalanche ruggedness.

  8. What are some common applications for the STD105N10F7AG?

    Common applications include automotive systems, industrial power supplies, high-power switching, and electric vehicle systems.

  9. Where can I find detailed specifications for the STD105N10F7AG?

    Detailed specifications can be found on the STMicroelectronics official website or through distributors like Digi-Key.

  10. Is the STD105N10F7AG available for purchase through major electronics distributors?

    Yes, it is available through distributors such as Digi-Key and JLCPCB.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4369 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):120W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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