FCD380N60E
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onsemi FCD380N60E

Manufacturer No:
FCD380N60E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 10.2A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCD380N60E is a high-voltage N-Channel MOSFET produced by onsemi. It belongs to the SUPERFET II family and is known for its Easy Drive technology. This MOSFET is packaged in a DPAK (TO-252AA) package, making it suitable for a variety of high-power applications. The device is characterized by its high voltage rating, low on-resistance, and high current handling capabilities, making it an ideal choice for power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
Continuous Drain Current (Id)10.2 A
On-Resistance (Rds(on))380 mΩ @ 10 V, 5 A
Power Dissipation (Pd)106 W
Threshold Voltage (Vth)3.5 V @ 250 μA
Package TypeDPAK (TO-252AA)

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low on-resistance of 380 mΩ, reducing power losses and improving efficiency.
  • Easy Drive technology for simplified gate drive requirements.
  • High continuous drain current of 10.2 A, supporting high current applications.
  • Compact DPAK package for space-efficient designs.

Applications

The FCD380N60E is designed for use in various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Industrial and automotive power management systems.

Q & A

  1. What is the voltage rating of the FCD380N60E MOSFET?
    The voltage rating of the FCD380N60E MOSFET is 600 V.
  2. What is the continuous drain current of the FCD380N60E?
    The continuous drain current of the FCD380N60E is 10.2 A.
  3. What is the on-resistance of the FCD380N60E?
    The on-resistance of the FCD380N60E is 380 mΩ @ 10 V, 5 A.
  4. What package type is the FCD380N60E available in?
    The FCD380N60E is available in a DPAK (TO-252AA) package.
  5. What is the power dissipation capability of the FCD380N60E?
    The power dissipation capability of the FCD380N60E is 106 W.
  6. What is the threshold voltage of the FCD380N60E?
    The threshold voltage of the FCD380N60E is 3.5 V @ 250 μA.
  7. What technology does the FCD380N60E use?
    The FCD380N60E uses Easy Drive technology.
  8. Is the FCD380N60E suitable for high-frequency switching applications?
    Yes, the FCD380N60E is suitable for high-frequency switching applications.
  9. Can the FCD380N60E be used in automotive applications?
    Yes, the FCD380N60E can be used in automotive power management systems.
  10. Where can I find detailed specifications for the FCD380N60E?
    Detailed specifications for the FCD380N60E can be found in the datasheet available on onsemi’s official website and other electronic component distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1770 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):106W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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