FDD9507L-F085
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onsemi FDD9507L-F085

Manufacturer No:
FDD9507L-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 100A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD9507L-F085 is a P-Channel Power MOSFET from ON Semiconductor, part of their PowerTrench product range. This device is designed for high-performance applications requiring low on-state resistance and high current handling. It features a drain-to-source voltage (Vds) of -40 V and a continuous drain current (Id) of -100 A, making it suitable for a variety of power management and control systems. The MOSFET is qualified to AEC-Q101 standards, ensuring reliability in automotive and other demanding environments. It is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental standards.

Key Specifications

Parameter Value Unit
Drain-to-Source Voltage (Vds) -40 V
Gate-to-Source Voltage (Vgs) ±16 V
Continuous Drain Current (Id) -100 A
Pulsed Drain Current - (See Figure 4) A
Power Dissipation (Pd) 227 W
Derate Above 25°C 1.52 W/°C
Operating and Storage Temperature (TJ, TSTG) -55 to +175 °C
Static Drain to Source On Resistance (Rds(on)) 3.3 mΩ @ Vgs = -10 V, Id = -80 A mΩ
Gate to Source Threshold Voltage (Vgs(th)) -1 to -3 V
Thermal Resistance, Junction to Case (RθJC) 0.66 °C/W
Thermal Resistance, Junction to Ambient (RθJA) 52 °C/W

Key Features

  • Typical Rds(on) = 3.3 mΩ at Vgs = -10 V, Id = -80 A
  • UIS Capability
  • Qualified to AEC-Q101 standards
  • Pb-free, halogen-free, and RoHS compliant
  • Low on-state resistance and high current handling
  • Surface mount package in TO-252 (DPAK) style

Applications

  • Automotive Engine Control
  • PowerTrain Management
  • Solenoid and Motor Drivers
  • Electrical Power Steering
  • Integrated Starter/Alternator
  • Distributed Power Architectures and VRM
  • Primary Switch for 12 V Systems

Q & A

  1. What is the drain-to-source voltage rating of the FDD9507L-F085?

    The drain-to-source voltage (Vds) rating is -40 V.

  2. What is the continuous drain current (Id) of the FDD9507L-F085?

    The continuous drain current (Id) is -100 A.

  3. What is the typical on-state resistance (Rds(on)) of the FDD9507L-F085?

    The typical Rds(on) is 3.3 mΩ at Vgs = -10 V, Id = -80 A.

  4. Is the FDD9507L-F085 qualified to any automotive standards?

    Yes, it is qualified to AEC-Q101 standards.

  5. What is the operating temperature range of the FDD9507L-F085?

    The operating temperature range is -55 to +175°C.

  6. What package type is the FDD9507L-F085 available in?

    The device is available in a TO-252 (DPAK) surface mount package.

  7. Is the FDD9507L-F085 RoHS compliant?

    Yes, it is Pb-free, halogen-free, and RoHS compliant.

  8. What are some typical applications of the FDD9507L-F085?

    Typical applications include automotive engine control, powertrain management, solenoid and motor drivers, electrical power steering, and more.

  9. What is the thermal resistance, junction to case (RθJC), of the FDD9507L-F085?

    The thermal resistance, junction to case (RθJC), is 0.66 °C/W.

  10. What is the maximum power dissipation (Pd) of the FDD9507L-F085?

    The maximum power dissipation (Pd) is 227 W.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:6250 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):227W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FDD9507L-F085 FDD9509L-F085 FDD9407L-F085
Manufacturer onsemi onsemi onsemi
Product Status Last Time Buy Obsolete Active
FET Type P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 90A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 80A, 10V 7.5mOhm @ 70A, 10V 2.4mOhm @ 80A, 4.5V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 75 nC @ 10 V 125 nC @ 10 V
Vgs (Max) ±16V ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6250 pF @ 20 V 3350 pF @ 20 V 6700 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 227W (Ta) 150W (Tj) 227W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D-PAK (TO-252) D-PAK (TO-252) TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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