STP360N4F6
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STMicroelectronics STP360N4F6

Manufacturer No:
STP360N4F6
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 40V 120A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP360N4F6 is an automotive-grade N-channel power MOSFET produced by STMicroelectronics. This device is part of the STripFET F6 series, known for its high performance and reliability. The STP360N4F6 is designed to operate at a maximum voltage of 40 V and can handle a continuous drain current of up to 120 A. It is packaged in a TO-220 package, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 40 V
ID (Continuous Drain Current) 120 A
RDS(on) (On-State Drain-Source Resistance) 1.46 mΩ (typ.)
PD (Power Dissipation) Dependent on package and thermal conditions
TJ (Junction Temperature) -40°C to 175°C
Package TO-220

Key Features

  • High Current Capability: Up to 120 A continuous drain current.
  • Low On-State Resistance: 1.46 mΩ typical RDS(on) for efficient power handling.
  • Automotive Grade: Designed to meet the stringent requirements of automotive applications.
  • DeepGATE Technology: Enhances the device's performance and reliability.
  • TO-220 Package: Suitable for high-power applications with good thermal dissipation.

Applications

  • Automotive Systems: Ideal for use in automotive power systems, including electric vehicles, hybrid vehicles, and conventional vehicles.
  • Power Supplies: Suitable for high-power DC-DC converters and power supplies.
  • Motor Control: Used in motor control circuits for industrial and automotive applications.
  • Renewable Energy Systems: Can be used in solar and wind power systems for efficient power conversion.

Q & A

  1. What is the maximum drain-source voltage of the STP360N4F6?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the continuous drain current rating of the STP360N4F6?

    The continuous drain current (ID) is up to 120 A.

  3. What is the typical on-state drain-source resistance of the STP360N4F6?

    The typical on-state drain-source resistance (RDS(on)) is 1.46 mΩ.

  4. In what package is the STP360N4F6 available?

    The STP360N4F6 is available in the TO-220 package.

  5. What is the operating junction temperature range of the STP360N4F6?

    The operating junction temperature range is -40°C to 175°C.

  6. Is the STP360N4F6 suitable for automotive applications?

    Yes, it is designed as an automotive-grade device.

  7. What technology does the STP360N4F6 use to enhance performance?

    The STP360N4F6 uses DeepGATE technology to enhance its performance and reliability.

  8. Can the STP360N4F6 be used in power supplies?

    Yes, it is suitable for use in high-power DC-DC converters and power supplies.

  9. Is the STP360N4F6 used in motor control applications?

    Yes, it is used in motor control circuits for both industrial and automotive applications.

  10. Can the STP360N4F6 be used in renewable energy systems?

    Yes, it can be used in solar and wind power systems for efficient power conversion.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.8mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:340 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:17930 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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