STP360N4F6
  • Share:

STMicroelectronics STP360N4F6

Manufacturer No:
STP360N4F6
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 40V 120A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP360N4F6 is an automotive-grade N-channel power MOSFET produced by STMicroelectronics. This device is part of the STripFET F6 series, known for its high performance and reliability. The STP360N4F6 is designed to operate at a maximum voltage of 40 V and can handle a continuous drain current of up to 120 A. It is packaged in a TO-220 package, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 40 V
ID (Continuous Drain Current) 120 A
RDS(on) (On-State Drain-Source Resistance) 1.46 mΩ (typ.)
PD (Power Dissipation) Dependent on package and thermal conditions
TJ (Junction Temperature) -40°C to 175°C
Package TO-220

Key Features

  • High Current Capability: Up to 120 A continuous drain current.
  • Low On-State Resistance: 1.46 mΩ typical RDS(on) for efficient power handling.
  • Automotive Grade: Designed to meet the stringent requirements of automotive applications.
  • DeepGATE Technology: Enhances the device's performance and reliability.
  • TO-220 Package: Suitable for high-power applications with good thermal dissipation.

Applications

  • Automotive Systems: Ideal for use in automotive power systems, including electric vehicles, hybrid vehicles, and conventional vehicles.
  • Power Supplies: Suitable for high-power DC-DC converters and power supplies.
  • Motor Control: Used in motor control circuits for industrial and automotive applications.
  • Renewable Energy Systems: Can be used in solar and wind power systems for efficient power conversion.

Q & A

  1. What is the maximum drain-source voltage of the STP360N4F6?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the continuous drain current rating of the STP360N4F6?

    The continuous drain current (ID) is up to 120 A.

  3. What is the typical on-state drain-source resistance of the STP360N4F6?

    The typical on-state drain-source resistance (RDS(on)) is 1.46 mΩ.

  4. In what package is the STP360N4F6 available?

    The STP360N4F6 is available in the TO-220 package.

  5. What is the operating junction temperature range of the STP360N4F6?

    The operating junction temperature range is -40°C to 175°C.

  6. Is the STP360N4F6 suitable for automotive applications?

    Yes, it is designed as an automotive-grade device.

  7. What technology does the STP360N4F6 use to enhance performance?

    The STP360N4F6 uses DeepGATE technology to enhance its performance and reliability.

  8. Can the STP360N4F6 be used in power supplies?

    Yes, it is suitable for use in high-power DC-DC converters and power supplies.

  9. Is the STP360N4F6 used in motor control applications?

    Yes, it is used in motor control circuits for both industrial and automotive applications.

  10. Can the STP360N4F6 be used in renewable energy systems?

    Yes, it can be used in solar and wind power systems for efficient power conversion.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.8mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:340 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:17930 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.09
223

Please send RFQ , we will respond immediately.

Same Series
STI360N4F6
STI360N4F6
MOSFET N-CH 40V 120A I2PAK

Related Product By Categories

STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

STD14NM50N
STD14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A DPAK
STGP30H60DF
STGP30H60DF
STMicroelectronics
IGBT 600V 60A 260W TO220
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
E-L9637D
E-L9637D
STMicroelectronics
IC TRANSCEIVER 1/1 8SO
E-TDA7560A
E-TDA7560A
STMicroelectronics
IC AMP AB QUAD 80W 27FLEXIWATT
M24C32-DRMN3TP/K
M24C32-DRMN3TP/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
VNP35N07FI
VNP35N07FI
STMicroelectronics
IC PWR DRVR N-CH 1:1 ISOWATT220
STM1811LWX7F
STM1811LWX7F
STMicroelectronics
IC SUPERVISOR 1 CHANNEL SOT23-3
L78M05CDT
L78M05CDT
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK
LD1085V18
LD1085V18
STMicroelectronics
IC REG LINEAR 1.8V 3A TO220AB
ISM330DHCXTR
ISM330DHCXTR
STMicroelectronics
INEMO INERTIAL MODULE: ALWAYS-ON