STP360N4F6
  • Share:

STMicroelectronics STP360N4F6

Manufacturer No:
STP360N4F6
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 40V 120A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP360N4F6 is an automotive-grade N-channel power MOSFET produced by STMicroelectronics. This device is part of the STripFET F6 series, known for its high performance and reliability. The STP360N4F6 is designed to operate at a maximum voltage of 40 V and can handle a continuous drain current of up to 120 A. It is packaged in a TO-220 package, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 40 V
ID (Continuous Drain Current) 120 A
RDS(on) (On-State Drain-Source Resistance) 1.46 mΩ (typ.)
PD (Power Dissipation) Dependent on package and thermal conditions
TJ (Junction Temperature) -40°C to 175°C
Package TO-220

Key Features

  • High Current Capability: Up to 120 A continuous drain current.
  • Low On-State Resistance: 1.46 mΩ typical RDS(on) for efficient power handling.
  • Automotive Grade: Designed to meet the stringent requirements of automotive applications.
  • DeepGATE Technology: Enhances the device's performance and reliability.
  • TO-220 Package: Suitable for high-power applications with good thermal dissipation.

Applications

  • Automotive Systems: Ideal for use in automotive power systems, including electric vehicles, hybrid vehicles, and conventional vehicles.
  • Power Supplies: Suitable for high-power DC-DC converters and power supplies.
  • Motor Control: Used in motor control circuits for industrial and automotive applications.
  • Renewable Energy Systems: Can be used in solar and wind power systems for efficient power conversion.

Q & A

  1. What is the maximum drain-source voltage of the STP360N4F6?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the continuous drain current rating of the STP360N4F6?

    The continuous drain current (ID) is up to 120 A.

  3. What is the typical on-state drain-source resistance of the STP360N4F6?

    The typical on-state drain-source resistance (RDS(on)) is 1.46 mΩ.

  4. In what package is the STP360N4F6 available?

    The STP360N4F6 is available in the TO-220 package.

  5. What is the operating junction temperature range of the STP360N4F6?

    The operating junction temperature range is -40°C to 175°C.

  6. Is the STP360N4F6 suitable for automotive applications?

    Yes, it is designed as an automotive-grade device.

  7. What technology does the STP360N4F6 use to enhance performance?

    The STP360N4F6 uses DeepGATE technology to enhance its performance and reliability.

  8. Can the STP360N4F6 be used in power supplies?

    Yes, it is suitable for use in high-power DC-DC converters and power supplies.

  9. Is the STP360N4F6 used in motor control applications?

    Yes, it is used in motor control circuits for both industrial and automotive applications.

  10. Can the STP360N4F6 be used in renewable energy systems?

    Yes, it can be used in solar and wind power systems for efficient power conversion.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.8mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:340 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:17930 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.09
223

Please send RFQ , we will respond immediately.

Same Series
STI360N4F6
STI360N4F6
MOSFET N-CH 40V 120A I2PAK

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3

Related Product By Brand

STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
BD140-16
BD140-16
STMicroelectronics
TRANS PNP 80V 1.5A SOT32
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
STM32L151VCH6
STM32L151VCH6
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100UFBGA
STM32F401CCY6TR
STM32F401CCY6TR
STMicroelectronics
IC MCU 32BIT 256KB FLASH 49WLCSP
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
TEA3718SDP
TEA3718SDP
STMicroelectronics
IC MOTOR DRVR BIPOLAR 16POWERDIP
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
LD39130SJ18R
LD39130SJ18R
STMicroelectronics
IC REG LIN 1.8V 300MA 4FLIPCHIP
LIS302DL
LIS302DL
STMicroelectronics
ACCEL 2.3-9.2G I2C/SPI 14LGA
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA