Overview
The STGP30H60DFB is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. It is part of the HB series, which is designed to optimize the balance between conduction and switching losses, thereby maximizing the efficiency of frequency converters. This IGBT utilizes an advanced proprietary trench gate field-stop structure, ensuring high speed switching, minimized tail current, and low saturation voltage.
The device is available in the TO-220 package, making it suitable for a variety of high-power applications. It features a maximum junction temperature of 175°C, high speed switching capabilities, and a positive VCE(sat) temperature coefficient, which enhances safe paralleling operations.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VGE = 0 V) | 600 | V |
| Continuous collector current at TC = 25 °C | 60 | A |
| Continuous collector current at TC = 100 °C | 30 | A |
| Pulsed collector current | 120 | A |
| Gate-emitter voltage | ±20 | V |
| Transient gate-emitter voltage | ±30 | V |
| Collector-emitter saturation voltage (VGE = 15 V, IC = 30 A) | 1.55 | V |
| Thermal resistance junction-case (IGBT) | 0.58 | °C/W |
| Thermal resistance junction-ambient | 62.5 | °C/W |
| Operating junction temperature range | -55 to 175 | °C |
| Storage temperature range | -55 to 150 | °C |
Key Features
- High speed switching series with minimized tail current.
- Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A.
- Tight parameter distribution for safer paralleling operations.
- Positive VCE(sat) temperature coefficient.
- Low thermal resistance.
- Very fast soft recovery antiparallel diode.
Applications
- Photovoltaic inverters.
- High frequency converters.
Q & A
- What is the maximum collector-emitter voltage of the STGP30H60DFB?
The maximum collector-emitter voltage is 600 V.
- What is the continuous collector current at 25°C and 100°C?
The continuous collector current is 60 A at 25°C and 30 A at 100°C.
- What is the typical collector-emitter saturation voltage?
The typical collector-emitter saturation voltage is 1.55 V at VGE = 15 V and IC = 30 A.
- What is the thermal resistance junction-case for the IGBT?
The thermal resistance junction-case for the IGBT is 0.58 °C/W.
- What are the operating and storage temperature ranges?
The operating junction temperature range is -55 to 175 °C, and the storage temperature range is -55 to 150 °C.
- What are the typical applications of the STGP30H60DFB?
The typical applications include photovoltaic inverters and high frequency converters.
- What package types are available for the STGP30H60DFB?
The device is available in the TO-220 package.
- What is the significance of the positive VCE(sat) temperature coefficient?
The positive VCE(sat) temperature coefficient enhances safe paralleling operations.
- What is the maximum junction temperature of the STGP30H60DFB?
The maximum junction temperature is 175 °C.
- How does the STGP30H60DFB optimize efficiency in frequency converters?
The device optimizes efficiency by balancing conduction and switching losses, thanks to its advanced proprietary trench gate field-stop structure.
