Overview
The STGD5H60DF is a Trench gate field-stop Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. It is part of the H series of IGBTs, which are designed to optimize the balance between conduction and switching losses, thereby maximizing the efficiency of high switching frequency converters. This device features an advanced proprietary trench gate field-stop structure, ensuring high-speed switching and tight parameter distribution, which is crucial for safe paralleling operations.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VCE) | 600 | V |
| Continuous collector current at TC = 25 °C | 10 | A |
| Continuous collector current at TC = 100 °C | 5 | A |
| Pulsed collector current | 20 | A |
| Gate-emitter voltage (VGE) | ±20 | V |
| Insulation withstand voltage (VISO) | 2500 | V (RMS) |
| Total power dissipation at TC = 25 °C | 88 | W |
| Storage temperature range | -55 to 150 | °C |
| Operating junction temperature range | -55 to 175 | °C |
| Thermal resistance junction-case (RthJC) IGBT | 1.7 | °C/W |
| Thermal resistance junction-ambient (RthJA) | 62.5 | °C/W |
| Collector-emitter saturation voltage (VCE(sat)) at IC = 5 A, VGE = 15 V | 1.5 - 1.95 | V |
| Gate threshold voltage (VGE(th)) | 4.8 - 6.9 | V |
Key Features
- High-speed switching: Optimized for high-frequency applications.
- Tight parameter distribution: Ensures safer paralleling operations.
- Safe paralleling: Suitable for applications requiring multiple devices in parallel.
- Low thermal resistance: Enhances heat dissipation and reliability.
- Short-circuit rated: Capable of withstanding short-circuit conditions.
- Ultrafast soft recovery antiparallel diode: Reduces switching losses and improves overall efficiency.
Applications
- Motor control: Suitable for high-efficiency motor control systems.
- UPS (Uninterruptible Power Supplies): Used in UPS systems for reliable power supply.
- PFC (Power Factor Correction): Ideal for PFC circuits to improve power factor and efficiency.
- Industrial applications: General use in various industrial power conversion and control systems.
Q & A
- What is the collector-emitter voltage rating of the STGD5H60DF?
The collector-emitter voltage rating is 600 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 10 A at 25 °C and 5 A at 100 °C.
- What is the thermal resistance junction-case (RthJC) for the IGBT?
The thermal resistance junction-case (RthJC) is 1.7 °C/W.
- What are the key features of the STGD5H60DF?
The key features include high-speed switching, tight parameter distribution, safe paralleling, low thermal resistance, short-circuit rating, and an ultrafast soft recovery antiparallel diode.
- In what applications is the STGD5H60DF commonly used?
The STGD5H60DF is commonly used in motor control, UPS, PFC, and various industrial applications.
- What is the operating junction temperature range of the STGD5H60DF?
The operating junction temperature range is -55 to 175 °C.
- What is the gate threshold voltage (VGE(th)) of the STGD5H60DF?
The gate threshold voltage (VGE(th)) is between 4.8 and 6.9 V.
- What is the collector-emitter saturation voltage (VCE(sat)) at IC = 5 A and VGE = 15 V?
The collector-emitter saturation voltage (VCE(sat)) is between 1.5 and 1.95 V.
- Is the STGD5H60DF short-circuit rated?
Yes, the STGD5H60DF is short-circuit rated.
- What type of package does the STGD5H60DF come in?
The STGD5H60DF comes in a DPAK package.
