STPSC10H12CWL
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STMicroelectronics STPSC10H12CWL

Manufacturer No:
STPSC10H12CWL
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE ARRAY SCHOTTKY 1200V TO247
Delivery:
Payment:
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Product Introduction

Overview

The STPSC10H12CWL is an ultrahigh performance power Schottky rectifier manufactured by STMicroelectronics. This silicon carbide (SiC) diode is available in the TO-247 LL package and is designed for high-voltage applications. The use of a silicon carbide substrate enables the creation of a low forward voltage drop (VF) Schottky diode structure with a 1200 V rating. This diode is particularly suited for use in power factor correction (PFC) and secondary side applications, enhancing performance in hard switching conditions.

Key Specifications

Specification Value
Part Number STPSC10H12CWL
Manufacturer STMicroelectronics
Package TO-247 LL
Voltage Rating 1200 V
Current Rating 19 A (per diode)
Forward Voltage Drop (VF) 2.25 V @ 5 A
Operating Junction Temperature -40 °C to 175 °C
RoHS Compliance Ecopack2 compliant

Key Features

  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • High forward surge capability for robustness during transient phases
  • ECOPACK2 compliant for environmental sustainability

Applications

The STPSC10H12CWL is especially suited for use in power factor correction (PFC) and secondary side applications. It enhances performance in hard switching conditions, making it ideal for high-power electronic systems that require efficient and reliable rectification.

Q & A

  1. What is the voltage rating of the STPSC10H12CWL?

    The voltage rating of the STPSC10H12CWL is 1200 V.

  2. What is the current rating of the STPSC10H12CWL?

    The current rating of the STPSC10H12CWL is 19 A per diode.

  3. What package type is the STPSC10H12CWL available in?

    The STPSC10H12CWL is available in the TO-247 LL package.

  4. What is the forward voltage drop (VF) of the STPSC10H12CWL?

    The forward voltage drop (VF) of the STPSC10H12CWL is 2.25 V at 5 A.

  5. What is the operating junction temperature range of the STPSC10H12CWL?

    The operating junction temperature range of the STPSC10H12CWL is -40 °C to 175 °C.

  6. Is the STPSC10H12CWL RoHS compliant?

    Yes, the STPSC10H12CWL is ECOPACK2 compliant, which meets RoHS standards.

  7. What are the key features of the STPSC10H12CWL?

    The key features include no or negligible reverse recovery, switching behavior independent of temperature, robust high voltage periphery, and high forward surge capability.

  8. What applications is the STPSC10H12CWL suited for?

    The STPSC10H12CWL is suited for power factor correction (PFC) and secondary side applications.

  9. How does the STPSC10H12CWL enhance performance in hard switching conditions?

    The STPSC10H12CWL enhances performance in hard switching conditions due to its low forward voltage drop and minimal capacitive turn-off behavior, which is independent of temperature.

  10. Where can I find EDA symbols, footprints, and 3D models for the STPSC10H12CWL?

    You can find EDA symbols, footprints, and 3D models for the STPSC10H12CWL on the STMicroelectronics website.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io) (per Diode):19A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 5 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:30 µA @ 1200 V
Operating Temperature - Junction:-40°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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In Stock

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Similar Products

Part Number STPSC10H12CWL STPSC20H12CWL STPSC30H12CWL STPSC40H12CWL
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) (per Diode) 19A 25A 38A 38A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 5 A 1.5 V @ 10 A 1.5 V @ 15 A 1.5 V @ 20 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 30 µA @ 1200 V 60 µA @ 1200 V 90 µA @ 1200 V 120 µA @ 1200 V
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3

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