STPSC30H12CWL
  • Share:

STMicroelectronics STPSC30H12CWL

Manufacturer No:
STPSC30H12CWL
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE ARRAY SCHOTTKY 1200V TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC30H12CWL is a high-performance silicon carbide (SiC) Schottky diode manufactured by STMicroelectronics. This diode is designed for ultrahigh performance power applications and is available in the TO-247 LL package. It features a 1200 V rating and is particularly suited for use in power factor correction (PFC) and secondary side applications, enhancing performance in hard switching conditions. The SiC material allows for a low forward voltage drop and minimal capacitive turn-off behavior, independent of temperature, making it an excellent choice for high-efficiency power conversion systems.

Key Specifications

ParameterValueUnit
VRRM (Repetitive Peak Reverse Voltage)1200V
IF(AV) (Average Forward Current) at TC = 150 °C15 A (per diode), 30 A (per device)A
IF(RMS) (Forward RMS Current)38 AA
IFRM (Repetitive Peak Forward Current) at TC = 150 °C, Tj = 175 °C61 AA
IFSM (Surge Non-Repetitive Forward Current) at tp = 10 ms, TC = 25 °C105 AA
Tj (Operating Junction Temperature Range)-40 to +175 °C°C
Tstg (Storage Temperature Range)-65 to +175 °C°C
VF (Typical Forward Voltage Drop) at Tj = 25 °C, IF = 15 A1.35 VV
Rth(j-c) (Junction to Case Thermal Resistance) per diode0.50 to 0.70 °C/W°C/W

Key Features

  • No or negligible reverse recovery and minimal capacitive turn-off behavior, independent of temperature.
  • Robust high voltage periphery and high forward surge capability.
  • Operating junction temperature range from -40 °C to 175 °C.
  • Low forward voltage drop (VF) of 1.35 V at 25 °C and 1.75 V at 150 °C.
  • ECOPACK®2 compliant, meeting environmental requirements.

Applications

The STPSC30H12CWL is especially suited for use in power factor correction (PFC) and secondary side applications. It is also beneficial in high-efficiency power conversion systems, such as those found in solar energy conversion, electric vehicle (EV) or hybrid electric vehicle (HEV) charging stations, and other high-performance power electronics.

Q & A

  1. What is the maximum repetitive peak reverse voltage (VRRM) of the STPSC30H12CWL? The maximum VRRM is 1200 V.
  2. What is the typical forward voltage drop (VF) at 25 °C and 15 A? The typical VF is 1.35 V.
  3. What is the operating junction temperature range of the STPSC30H12CWL? The operating junction temperature range is from -40 °C to 175 °C.
  4. Is the STPSC30H12CWL ECOPACK® compliant? Yes, it is ECOPACK®2 compliant.
  5. What are the typical applications of the STPSC30H12CWL? It is used in PFC, secondary side applications, solar energy conversion, EV/HEV charging stations, and other high-performance power electronics.
  6. What is the package type of the STPSC30H12CWL? It is available in the TO-247 LL package.
  7. What is the maximum forward RMS current (IF(RMS)) of the STPSC30H12CWL? The maximum IF(RMS) is 38 A.
  8. What is the surge non-repetitive forward current (IFSM) at tp = 10 ms and TC = 25 °C? The IFSM is 105 A.
  9. What is the junction to case thermal resistance (Rth(j-c)) per diode? The Rth(j-c) is 0.50 to 0.70 °C/W.
  10. Does the STPSC30H12CWL exhibit reverse recovery? No, it exhibits no or negligible reverse recovery.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io) (per Diode):38A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 15 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:90 µA @ 1200 V
Operating Temperature - Junction:-40°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
0 Remaining View Similar

In Stock

$16.00
28

Please send RFQ , we will respond immediately.

Similar Products

Part Number STPSC30H12CWL STPSC40H12CWL STPSC10H12CWL STPSC20H12CWL
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) (per Diode) 38A 38A 19A 25A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 15 A 1.5 V @ 20 A 1.5 V @ 5 A 1.5 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 90 µA @ 1200 V 120 µA @ 1200 V 30 µA @ 1200 V 60 µA @ 1200 V
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

BAT54CLT3G
BAT54CLT3G
onsemi
DIODE ARRAY SCHOTTKY 30V SOT23-3
BAT54A-TP
BAT54A-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 30V SOT23
BAW56_R1_00001
BAW56_R1_00001
Panjit International Inc.
SOT-23, SWITCHING
BAS4006WH6327XTSA1
BAS4006WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
MMBD2835LT1G
MMBD2835LT1G
onsemi
DIODE ARRAY GP 35V 100MA SOT23-3
SBAV70LT3G
SBAV70LT3G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
BAW56SH6327XTSA1
BAW56SH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
MBRD1035CTLG
MBRD1035CTLG
onsemi
DIODE ARRAY SCHOTTKY 35V 5A DPAK
BAV99WE6433BTMA1
BAV99WE6433BTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAV 99W H6433
BAV 99W H6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAT54SW RVG
BAT54SW RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT323
BAV99HMT116
BAV99HMT116
Rohm Semiconductor
PMDU RECTIFYING DIODE

Related Product By Brand

SM15T75AY
SM15T75AY
STMicroelectronics
TVS DIODE 64.1VWM 134VC SMC
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
SCT10N120
SCT10N120
STMicroelectronics
SICFET N-CH 1200V 12A HIP247
STM32F207ZET6TR
STM32F207ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
TSV6290AICT
TSV6290AICT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT SC70-6
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
TEA3718SDP
TEA3718SDP
STMicroelectronics
IC MOTOR DRVR BIPOLAR 16POWERDIP
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
L5050STR
L5050STR
STMicroelectronics
IC REG LINEAR 5V 50MA 8SO
LD1117AS25TR
LD1117AS25TR
STMicroelectronics
IC REG LINEAR 2.5V 1A SOT223