STPSC30H12CWL
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STMicroelectronics STPSC30H12CWL

Manufacturer No:
STPSC30H12CWL
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE ARRAY SCHOTTKY 1200V TO247
Delivery:
Payment:
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Product Introduction

Overview

The STPSC30H12CWL is a high-performance silicon carbide (SiC) Schottky diode manufactured by STMicroelectronics. This diode is designed for ultrahigh performance power applications and is available in the TO-247 LL package. It features a 1200 V rating and is particularly suited for use in power factor correction (PFC) and secondary side applications, enhancing performance in hard switching conditions. The SiC material allows for a low forward voltage drop and minimal capacitive turn-off behavior, independent of temperature, making it an excellent choice for high-efficiency power conversion systems.

Key Specifications

ParameterValueUnit
VRRM (Repetitive Peak Reverse Voltage)1200V
IF(AV) (Average Forward Current) at TC = 150 °C15 A (per diode), 30 A (per device)A
IF(RMS) (Forward RMS Current)38 AA
IFRM (Repetitive Peak Forward Current) at TC = 150 °C, Tj = 175 °C61 AA
IFSM (Surge Non-Repetitive Forward Current) at tp = 10 ms, TC = 25 °C105 AA
Tj (Operating Junction Temperature Range)-40 to +175 °C°C
Tstg (Storage Temperature Range)-65 to +175 °C°C
VF (Typical Forward Voltage Drop) at Tj = 25 °C, IF = 15 A1.35 VV
Rth(j-c) (Junction to Case Thermal Resistance) per diode0.50 to 0.70 °C/W°C/W

Key Features

  • No or negligible reverse recovery and minimal capacitive turn-off behavior, independent of temperature.
  • Robust high voltage periphery and high forward surge capability.
  • Operating junction temperature range from -40 °C to 175 °C.
  • Low forward voltage drop (VF) of 1.35 V at 25 °C and 1.75 V at 150 °C.
  • ECOPACK®2 compliant, meeting environmental requirements.

Applications

The STPSC30H12CWL is especially suited for use in power factor correction (PFC) and secondary side applications. It is also beneficial in high-efficiency power conversion systems, such as those found in solar energy conversion, electric vehicle (EV) or hybrid electric vehicle (HEV) charging stations, and other high-performance power electronics.

Q & A

  1. What is the maximum repetitive peak reverse voltage (VRRM) of the STPSC30H12CWL? The maximum VRRM is 1200 V.
  2. What is the typical forward voltage drop (VF) at 25 °C and 15 A? The typical VF is 1.35 V.
  3. What is the operating junction temperature range of the STPSC30H12CWL? The operating junction temperature range is from -40 °C to 175 °C.
  4. Is the STPSC30H12CWL ECOPACK® compliant? Yes, it is ECOPACK®2 compliant.
  5. What are the typical applications of the STPSC30H12CWL? It is used in PFC, secondary side applications, solar energy conversion, EV/HEV charging stations, and other high-performance power electronics.
  6. What is the package type of the STPSC30H12CWL? It is available in the TO-247 LL package.
  7. What is the maximum forward RMS current (IF(RMS)) of the STPSC30H12CWL? The maximum IF(RMS) is 38 A.
  8. What is the surge non-repetitive forward current (IFSM) at tp = 10 ms and TC = 25 °C? The IFSM is 105 A.
  9. What is the junction to case thermal resistance (Rth(j-c)) per diode? The Rth(j-c) is 0.50 to 0.70 °C/W.
  10. Does the STPSC30H12CWL exhibit reverse recovery? No, it exhibits no or negligible reverse recovery.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io) (per Diode):38A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 15 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:90 µA @ 1200 V
Operating Temperature - Junction:-40°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Similar Products

Part Number STPSC30H12CWL STPSC40H12CWL STPSC10H12CWL STPSC20H12CWL
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) (per Diode) 38A 38A 19A 25A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 15 A 1.5 V @ 20 A 1.5 V @ 5 A 1.5 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 90 µA @ 1200 V 120 µA @ 1200 V 30 µA @ 1200 V 60 µA @ 1200 V
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3

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