Overview
The BAV70DXV6T5 is a monolithic dual switching diode with a common cathode configuration, manufactured by onsemi. This device is designed for high-performance switching applications and is particularly suited for automotive and other environments requiring stringent reliability and quality standards. It is AEC-Q101 qualified and PPAP capable, ensuring it meets the rigorous demands of automotive electronics. The diode is lead-free, halogen-free, and RoHS compliant, aligning with modern environmental standards.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Reverse Voltage | VR | 100 | Vdc |
| Forward Current | IF | 200 | mAdc |
| Peak Forward Surge Current | IFM(surge) | 500 | mAdc |
| Total Device Dissipation (TA = 25°C) | PD | 357 (Note 1) | mW |
| Derate above 25°C | - | 2.9 (Note 1) | mW/°C |
| Thermal Resistance - Junction-to-Ambient (One Junction Heated) | RJA | 350 (Note 1) | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Reverse Breakdown Voltage (IBR = 100 μAdc) | V(BR) | 100 | Vdc |
| Reverse Voltage Leakage Current (VR = 70 Vdc, TJ = 150°C) | IR | 2.5 | μAdc |
| Forward Voltage (IF = 10 mAdc) | VF | 855 | mVdc |
| Reverse Recovery Time (RL = 100 Ω, IF = IR = 10 mAdc, VR = 5.0 Vdc, IR(REC) = 1.0 mAdc) | trr | 6.0 | ns |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Lead-free, halogen-free, and RoHS compliant, ensuring environmental compliance.
- High reverse voltage rating of 100 Vdc and forward current rating of 200 mAdc.
- Peak forward surge current of 500 mAdc, providing robustness against transient conditions.
- Low forward voltage drop, typically 855 mVdc at 10 mAdc.
- Fast reverse recovery time of 6.0 ns, suitable for high-speed switching applications.
- Compact SOT-563 package with a small footprint, ideal for space-constrained designs.
Applications
- Automotive electronics, including power management and signal processing circuits.
- General-purpose switching and rectification in industrial and consumer electronics.
- High-frequency applications requiring fast switching times and low forward voltage drop.
- Power supply circuits, including DC-DC converters and voltage regulators.
- Signal detection and protection circuits in various electronic systems.
Q & A
- What is the reverse voltage rating of the BAV70DXV6T5 diode?
The reverse voltage rating of the BAV70DXV6T5 diode is 100 Vdc.
- What is the maximum forward current rating of the BAV70DXV6T5 diode?
The maximum forward current rating of the BAV70DXV6T5 diode is 200 mAdc.
- Is the BAV70DXV6T5 diode RoHS compliant?
- What is the typical forward voltage drop of the BAV70DXV6T5 diode at 10 mA?
The typical forward voltage drop of the BAV70DXV6T5 diode at 10 mA is 855 mVdc.
- What is the reverse recovery time of the BAV70DXV6T5 diode?
The reverse recovery time of the BAV70DXV6T5 diode is 6.0 ns.
- What package type is the BAV70DXV6T5 diode available in?
The BAV70DXV6T5 diode is available in the SOT-563 package.
- Is the BAV70DXV6T5 diode suitable for automotive applications?
- What is the junction and storage temperature range of the BAV70DXV6T5 diode?
The junction and storage temperature range of the BAV70DXV6T5 diode is -55 to +150°C.
- What is the peak forward surge current rating of the BAV70DXV6T5 diode?
The peak forward surge current rating of the BAV70DXV6T5 diode is 500 mAdc.
- How does the thermal resistance of the BAV70DXV6T5 diode vary with temperature?
The thermal resistance of the BAV70DXV6T5 diode is 350°C/W for one junction heated and 250°C/W for both junctions heated, with derating above 25°C.
