NRVBD660CTT4G
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onsemi NRVBD660CTT4G

Manufacturer No:
NRVBD660CTT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY SCHOTTKY 60V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVBD660CTT4G is a state-of-the-art Schottky rectifier diode array produced by onsemi. This component is designed for use in switching power supplies, inverters, and as free-wheeling diodes. It features extremely fast switching and low forward drop, making it ideal for high-efficiency applications. The device is part of the SWITCHMODE™ series and is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding applications.

Key Specifications

Characteristic Value Unit
Peak Repetitive Reverse Voltage (VRRM) 60 V
Average Rectified Forward Current (IF(AV)) 3 A
Peak Repetitive Forward Current (IFRM) 6 A
Nonrepetitive Peak Surge Current (IFSM) 75 A
Operating Junction Temperature (TJ) -65 to +175 °C
Storage Temperature (Tstg) -65 to +175 °C
Maximum Instantaneous Forward Voltage (VF) at 3 A, TC = 25°C 0.7 V
Reverse Recovery Time (trr) < 500 ns
Package TO-252-3, DPAK (2 Leads + Tab), SC-63
Diode Configuration 1 Pair Common Cathode
Mounting Type Surface Mount

Key Features

  • Extremely Fast Switching
  • Extremely Low Forward Drop
  • Platinum Barrier with Avalanche Guardrings
  • AEC-Q101 Qualified and PPAP Capable, suitable for automotive and other demanding applications
  • Pb-Free and RoHS Compliant
  • Fast Recovery Time: < 500 ns, > 200 mA (Io)
  • Corrosion Resistant and Readily Solderable Terminal Leads

Applications

The NRVBD660CTT4G is designed for use in various high-efficiency applications, including:

  • Switching Power Supplies
  • Inverters
  • Free-Wheeling Diodes
  • Automotive Systems
  • Other Applications Requiring High Reliability and Efficiency

Q & A

  1. What is the peak repetitive reverse voltage (VRRM) of the NRVBD660CTT4G?

    The peak repetitive reverse voltage (VRRM) is 60 V.

  2. What is the average rectified forward current (IF(AV)) of the NRVBD660CTT4G?

    The average rectified forward current (IF(AV)) is 3 A.

  3. What is the operating junction temperature range of the NRVBD660CTT4G?

    The operating junction temperature range is -65°C to +175°C.

  4. Is the NRVBD660CTT4G AEC-Q101 qualified?
  5. What is the package type of the NRVBD660CTT4G?

    The package type is TO-252-3, DPAK (2 Leads + Tab), SC-63.

  6. What is the diode configuration of the NRVBD660CTT4G?

    The diode configuration is 1 Pair Common Cathode.

  7. What is the maximum instantaneous forward voltage (VF) at 3 A and 25°C?

    The maximum instantaneous forward voltage (VF) at 3 A and 25°C is 0.7 V.

  8. Is the NRVBD660CTT4G Pb-Free and RoHS Compliant?
  9. What is the reverse recovery time (trr) of the NRVBD660CTT4G?

    The reverse recovery time (trr) is less than 500 ns.

  10. What are the typical applications of the NRVBD660CTT4G?

    The typical applications include switching power supplies, inverters, free-wheeling diodes, and automotive systems.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io) (per Diode):3A
Voltage - Forward (Vf) (Max) @ If:700 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 60 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number NRVBD660CTT4G NRVBD640CTT4G NRVBD650CTT4G NRVBD660CTT4
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode -
Diode Type Schottky Schottky Schottky -
Voltage - DC Reverse (Vr) (Max) 60 V 40 V 50 V -
Current - Average Rectified (Io) (per Diode) 3A 3A 3A -
Voltage - Forward (Vf) (Max) @ If 700 mV @ 3 A 700 mV @ 3 A 700 mV @ 3 A -
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) -
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 100 µA @ 60 V 100 µA @ 40 V 100 µA @ 50 V -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -
Mounting Type Surface Mount Surface Mount Surface Mount -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 -
Supplier Device Package DPAK DPAK DPAK -

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