FDB024N08BL7
  • Share:

onsemi FDB024N08BL7

Manufacturer No:
FDB024N08BL7
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 120A TO263-7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDB024N08BL7 is an N-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench® process. This technology is designed to minimize on-state resistance while maintaining high performance and reliability. The device is part of the low to medium voltage MOSFET family, making it suitable for various power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)80 V
Current Rating (Id)120 A (Tc)
Power Dissipation (Pd)246 W (Tc)
Package TypeTO-263-7 (Surface Mount)
Gate VoltageStandard 40V gate level
On-Resistance (Rds(on))Leading on-resistance for its class

Key Features

  • Advanced PowerTrench® process for low on-state resistance
  • High current and power handling capabilities
  • Standard 40V gate level for compatibility with various drive circuits
  • Dual protection with temperature and current limit features
  • Surface mount TO-263-7 package for ease of integration

Applications

The FDB024N08BL7 is well-suited for a variety of applications, including:

  • Motor driver applications due to its high current and power handling capabilities
  • Synchronous rectification in power supplies, such as those used in ATX and server systems
  • General power management and switching applications requiring high efficiency and reliability

Q & A

  1. What is the voltage rating of the FDB024N08BL7 MOSFET?
    The voltage rating of the FDB024N08BL7 MOSFET is 80 V.
  2. What is the current rating of the FDB024N08BL7 MOSFET?
    The current rating of the FDB024N08BL7 MOSFET is 120 A (Tc).
  3. What is the power dissipation of the FDB024N08BL7 MOSFET?
    The power dissipation of the FDB024N08BL7 MOSFET is 246 W (Tc).
  4. What package type does the FDB024N08BL7 MOSFET use?
    The FDB024N08BL7 MOSFET uses a TO-263-7 surface mount package.
  5. What is the gate voltage level of the FDB024N08BL7 MOSFET?
    The gate voltage level of the FDB024N08BL7 MOSFET is standard 40V.
  6. What are some key features of the FDB024N08BL7 MOSFET?
    The FDB024N08BL7 MOSFET features an advanced PowerTrench® process, high current and power handling, standard 40V gate level, and dual protection with temperature and current limit.
  7. What are some common applications for the FDB024N08BL7 MOSFET?
    The FDB024N08BL7 MOSFET is commonly used in motor driver applications, synchronous rectification in power supplies, and general power management and switching applications.
  8. Why is the PowerTrench® process important in the FDB024N08BL7 MOSFET?
    The PowerTrench® process is important because it minimizes on-state resistance, enhancing the overall performance and efficiency of the MOSFET.
  9. Does the FDB024N08BL7 MOSFET have any built-in protection features?
    Yes, the FDB024N08BL7 MOSFET includes dual protection with temperature and current limit features.
  10. Where can I find detailed specifications for the FDB024N08BL7 MOSFET?
    Detailed specifications for the FDB024N08BL7 MOSFET can be found in the datasheet available on the onsemi website, Digi-Key, Mouser, and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:178 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13530 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):246W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
0 Remaining View Similar

In Stock

$4.98
90

Please send RFQ , we will respond immediately.

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
NCP81101MNTXG
NCP81101MNTXG
onsemi
IC REG BUCK CTLR 1PH 28QFN
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
LM317MDTG
LM317MDTG
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5