FDB024N08BL7
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onsemi FDB024N08BL7

Manufacturer No:
FDB024N08BL7
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 120A TO263-7
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The FDB024N08BL7 is an N-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench® process. This technology is designed to minimize on-state resistance while maintaining high performance and reliability. The device is part of the low to medium voltage MOSFET family, making it suitable for various power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)80 V
Current Rating (Id)120 A (Tc)
Power Dissipation (Pd)246 W (Tc)
Package TypeTO-263-7 (Surface Mount)
Gate VoltageStandard 40V gate level
On-Resistance (Rds(on))Leading on-resistance for its class

Key Features

  • Advanced PowerTrench® process for low on-state resistance
  • High current and power handling capabilities
  • Standard 40V gate level for compatibility with various drive circuits
  • Dual protection with temperature and current limit features
  • Surface mount TO-263-7 package for ease of integration

Applications

The FDB024N08BL7 is well-suited for a variety of applications, including:

  • Motor driver applications due to its high current and power handling capabilities
  • Synchronous rectification in power supplies, such as those used in ATX and server systems
  • General power management and switching applications requiring high efficiency and reliability

Q & A

  1. What is the voltage rating of the FDB024N08BL7 MOSFET?
    The voltage rating of the FDB024N08BL7 MOSFET is 80 V.
  2. What is the current rating of the FDB024N08BL7 MOSFET?
    The current rating of the FDB024N08BL7 MOSFET is 120 A (Tc).
  3. What is the power dissipation of the FDB024N08BL7 MOSFET?
    The power dissipation of the FDB024N08BL7 MOSFET is 246 W (Tc).
  4. What package type does the FDB024N08BL7 MOSFET use?
    The FDB024N08BL7 MOSFET uses a TO-263-7 surface mount package.
  5. What is the gate voltage level of the FDB024N08BL7 MOSFET?
    The gate voltage level of the FDB024N08BL7 MOSFET is standard 40V.
  6. What are some key features of the FDB024N08BL7 MOSFET?
    The FDB024N08BL7 MOSFET features an advanced PowerTrench® process, high current and power handling, standard 40V gate level, and dual protection with temperature and current limit.
  7. What are some common applications for the FDB024N08BL7 MOSFET?
    The FDB024N08BL7 MOSFET is commonly used in motor driver applications, synchronous rectification in power supplies, and general power management and switching applications.
  8. Why is the PowerTrench® process important in the FDB024N08BL7 MOSFET?
    The PowerTrench® process is important because it minimizes on-state resistance, enhancing the overall performance and efficiency of the MOSFET.
  9. Does the FDB024N08BL7 MOSFET have any built-in protection features?
    Yes, the FDB024N08BL7 MOSFET includes dual protection with temperature and current limit features.
  10. Where can I find detailed specifications for the FDB024N08BL7 MOSFET?
    Detailed specifications for the FDB024N08BL7 MOSFET can be found in the datasheet available on the onsemi website, Digi-Key, Mouser, and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:178 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13530 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):246W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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