CSD18531Q5AT
  • Share:

Texas Instruments CSD18531Q5AT

Manufacturer No:
CSD18531Q5AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 100A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD18531Q5AT is a 60-V, N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, making it highly efficient for various power management needs. It features a compact SON 5-mm × 6-mm plastic package, which is lead-free, RoHS compliant, and halogen-free, ensuring environmental sustainability and reliability.

Key Specifications

Parameter Typical Value Unit
Drain-to-Source Voltage (VDS) 60 V
Gate Charge Total (Qg) at 10 V 36 nC
Gate Charge Gate-to-Drain (Qgd) 5.9 nC
Drain-to-Source On-Resistance (RDS(on)) at VGS = 10 V 3.5
Threshold Voltage (VGS(th)) 1.8 V
Continuous Drain Current (ID) at TC = 25°C 134 A
Pulsed Drain Current (IDM) 400 A
Power Dissipation (PD) at TC = 25°C 3.8 W
Operating Junction Temperature (TJ) -55 to 175 °C
Storage Temperature (Tstg) -55 to 175 °C
Avalanche Energy (EAS) 224 mJ

Key Features

  • Ultra-Low Qg and Qgd: Minimizes switching losses.
  • Low Thermal Resistance: Enhances thermal performance.
  • Avalanche Rated: Provides robustness against voltage spikes.
  • Logic Level: Compatible with standard logic gate voltages.
  • Lead-Free Terminal Plating: Environmentally friendly.
  • RoHS Compliant and Halogen Free: Meets regulatory standards.
  • SON 5-mm × 6-mm Plastic Package: Compact and efficient packaging.

Applications

  • DC-DC Conversion: Ideal for power conversion applications.
  • Secondary Side Synchronous Rectifier: Used in high-efficiency power supplies.
  • Battery Motor Control: Suitable for motor control in battery-powered systems.

Q & A

  1. What is the maximum drain-to-source voltage of the CSD18531Q5AT?

    The maximum drain-to-source voltage is 60 V.

  2. What is the typical on-state resistance of the CSD18531Q5AT at VGS = 10 V?

    The typical on-state resistance is 3.5 mΩ.

  3. What is the continuous drain current rating at TC = 25°C?

    The continuous drain current rating is 134 A.

  4. What is the operating junction temperature range of the CSD18531Q5AT?

    The operating junction temperature range is -55°C to 175°C.

  5. Is the CSD18531Q5AT RoHS compliant and halogen-free?
  6. What are the typical applications of the CSD18531Q5AT?

    The typical applications include DC-DC conversion, secondary side synchronous rectifier, and battery motor control.

  7. What is the package type of the CSD18531Q5AT?

    The package type is SON 5-mm × 6-mm plastic package.

  8. What is the gate charge total (Qg) at 10 V for the CSD18531Q5AT?

    The gate charge total (Qg) at 10 V is 36 nC.

  9. What is the maximum power dissipation of the CSD18531Q5AT at TC = 25°C?

    The maximum power dissipation is 3.8 W.

  10. Is the CSD18531Q5AT avalanche rated?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3840 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$2.10
392

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number CSD18531Q5AT CSD18534Q5AT CSD19531Q5AT CSD18533Q5AT CSD18511Q5AT CSD18531Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 100 V 60 V 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 50A (Ta) 100A (Ta) 17A (Ta), 100A (Tc) 159A (Tc) 19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 6V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 22A, 10V 9.8mOhm @ 14A, 10V 6.4mOhm @ 16A, 10V 5.9mOhm @ 18A, 10V 3.5mOhm @ 24A, 4.5V 4.6mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.3V @ 250µA 3.3V @ 250µA 2.3V @ 250µA 2.45V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 11.1 nC @ 4.5 V 48 nC @ 10 V 36 nC @ 10 V 63 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3840 pF @ 30 V 1770 pF @ 30 V 3870 pF @ 50 V 2750 pF @ 30 V 5850 pF @ 10 V 3840 pF @ 30 V
FET Feature - - - - - -
Power Dissipation (Max) 3.1W (Ta), 156W (Tc) 3.1W (Ta), 77W (Tc) 3.3W (Ta), 125W (Tc) 3.2W (Ta), 116W (Tc) 104W (Tc) 3.1W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3

Related Product By Brand

SRC4192IDBR
SRC4192IDBR
Texas Instruments
IC SAMPLE RATE CONVERTER 28SSOP
LMC555CMX
LMC555CMX
Texas Instruments
IC OSC SINGLE TIMER 3MHZ 8-SOIC
TMS320VC5407ZGU
TMS320VC5407ZGU
Texas Instruments
IC DGTL SIGNAL PROCESSOR 144-BGA
SN65HVD72DR
SN65HVD72DR
Texas Instruments
IC TRANSCEIVER HALF 1/1 8SOIC
LMH1219RTWT
LMH1219RTWT
Texas Instruments
IC INTERFACE SPECIALIZED 24WQFN
TL3016ID
TL3016ID
Texas Instruments
IC HS LP COMP 8-SOIC
SN74HC153PWR
SN74HC153PWR
Texas Instruments
IC MULTIPLEXER 2 X 4:1 16TSSOP
TPS26610DDFR
TPS26610DDFR
Texas Instruments
50-V, UNIVERSAL 4-20-MA, 20-MA C
LM3401MMX/NOPB
LM3401MMX/NOPB
Texas Instruments
IC LED DRVR CTRLR PWM 1A 8VSSOP
UCD9081RHBT
UCD9081RHBT
Texas Instruments
IC SUPERVISOR 8 CHANNEL 32VQFN
TPS54233D
TPS54233D
Texas Instruments
IC REG BUCK ADJUSTABLE 2A 8SOIC
TMP709AIDBVR
TMP709AIDBVR
Texas Instruments
THERMOSTAT PROG ACT LOW SOT23-5