CSD18531Q5AT
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Texas Instruments CSD18531Q5AT

Manufacturer No:
CSD18531Q5AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 100A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD18531Q5AT is a 60-V, N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, making it highly efficient for various power management needs. It features a compact SON 5-mm × 6-mm plastic package, which is lead-free, RoHS compliant, and halogen-free, ensuring environmental sustainability and reliability.

Key Specifications

Parameter Typical Value Unit
Drain-to-Source Voltage (VDS) 60 V
Gate Charge Total (Qg) at 10 V 36 nC
Gate Charge Gate-to-Drain (Qgd) 5.9 nC
Drain-to-Source On-Resistance (RDS(on)) at VGS = 10 V 3.5 mΩ
Threshold Voltage (VGS(th)) 1.8 V
Continuous Drain Current (ID) at TC = 25°C 134 A
Pulsed Drain Current (IDM) 400 A
Power Dissipation (PD) at TC = 25°C 3.8 W
Operating Junction Temperature (TJ) -55 to 175 °C
Storage Temperature (Tstg) -55 to 175 °C
Avalanche Energy (EAS) 224 mJ

Key Features

  • Ultra-Low Qg and Qgd: Minimizes switching losses.
  • Low Thermal Resistance: Enhances thermal performance.
  • Avalanche Rated: Provides robustness against voltage spikes.
  • Logic Level: Compatible with standard logic gate voltages.
  • Lead-Free Terminal Plating: Environmentally friendly.
  • RoHS Compliant and Halogen Free: Meets regulatory standards.
  • SON 5-mm × 6-mm Plastic Package: Compact and efficient packaging.

Applications

  • DC-DC Conversion: Ideal for power conversion applications.
  • Secondary Side Synchronous Rectifier: Used in high-efficiency power supplies.
  • Battery Motor Control: Suitable for motor control in battery-powered systems.

Q & A

  1. What is the maximum drain-to-source voltage of the CSD18531Q5AT?

    The maximum drain-to-source voltage is 60 V.

  2. What is the typical on-state resistance of the CSD18531Q5AT at VGS = 10 V?

    The typical on-state resistance is 3.5 mΩ.

  3. What is the continuous drain current rating at TC = 25°C?

    The continuous drain current rating is 134 A.

  4. What is the operating junction temperature range of the CSD18531Q5AT?

    The operating junction temperature range is -55°C to 175°C.

  5. Is the CSD18531Q5AT RoHS compliant and halogen-free?
  6. What are the typical applications of the CSD18531Q5AT?

    The typical applications include DC-DC conversion, secondary side synchronous rectifier, and battery motor control.

  7. What is the package type of the CSD18531Q5AT?

    The package type is SON 5-mm × 6-mm plastic package.

  8. What is the gate charge total (Qg) at 10 V for the CSD18531Q5AT?

    The gate charge total (Qg) at 10 V is 36 nC.

  9. What is the maximum power dissipation of the CSD18531Q5AT at TC = 25°C?

    The maximum power dissipation is 3.8 W.

  10. Is the CSD18531Q5AT avalanche rated?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3840 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18531Q5AT CSD18534Q5AT CSD19531Q5AT CSD18533Q5AT CSD18511Q5AT CSD18531Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 100 V 60 V 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 50A (Ta) 100A (Ta) 17A (Ta), 100A (Tc) 159A (Tc) 19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 6V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 22A, 10V 9.8mOhm @ 14A, 10V 6.4mOhm @ 16A, 10V 5.9mOhm @ 18A, 10V 3.5mOhm @ 24A, 4.5V 4.6mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.3V @ 250µA 3.3V @ 250µA 2.3V @ 250µA 2.45V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 11.1 nC @ 4.5 V 48 nC @ 10 V 36 nC @ 10 V 63 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3840 pF @ 30 V 1770 pF @ 30 V 3870 pF @ 50 V 2750 pF @ 30 V 5850 pF @ 10 V 3840 pF @ 30 V
FET Feature - - - - - -
Power Dissipation (Max) 3.1W (Ta), 156W (Tc) 3.1W (Ta), 77W (Tc) 3.3W (Ta), 125W (Tc) 3.2W (Ta), 116W (Tc) 104W (Tc) 3.1W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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