CSD18533Q5AT
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Texas Instruments CSD18533Q5AT

Manufacturer No:
CSD18533Q5AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 17A/100A 8VSON
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The CSD18533Q5AT is a 60 V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, offering ultra-low gate charge and low thermal resistance. It is packaged in a SON 5 mm × 6 mm plastic package, making it suitable for a variety of high-performance applications. The MOSFET features a low on-state resistance and is avalanche rated, ensuring robust operation under various conditions.

Key Specifications

ParameterTest ConditionsMinMaxUnit
Drain-to-Source Voltage (VDS)VGS = 0 V, ID = 250 μA6060V
Gate-to-Source Threshold Voltage (VGS(th))VDS = VGS, ID = 250 μA1.51.92.3V
Drain-to-Source On-Resistance (RDS(on))VGS = 10 V, ID = 18 A4.75.9mΩ
Gate Charge Total (Qg)VGS = 10 V2936nC
Continuous Drain Current (ID)TA = 25°C17A
Pulsed Drain Current (IDM)TA = 25°C267A
Thermal Resistance Junction to Ambient (RθJA)50°C/W

Key Features

  • Ultra low gate charge (Qg) and gate-to-drain charge (Qgd)
  • Low thermal resistance
  • Avalanche rated
  • Logic level operation with VGS = 4.5 V
  • Pb-free terminal plating and RoHS compliant
  • Halogen-free
  • SON 5 mm × 6 mm plastic package

Applications

  • DC-DC conversion
  • Secondary side synchronous rectifier
  • Motor control

Q & A

  1. What is the maximum drain-to-source voltage of the CSD18533Q5AT? The maximum drain-to-source voltage is 60 V.
  2. What is the typical on-state resistance of the CSD18533Q5AT? The typical on-state resistance is 4.7 mΩ at VGS = 10 V and ID = 18 A.
  3. What is the gate charge total for the CSD18533Q5AT? The gate charge total is typically 29 nC at VGS = 10 V.
  4. What is the continuous drain current rating for the CSD18533Q5AT? The continuous drain current rating is 17 A at TA = 25°C.
  5. Is the CSD18533Q5AT RoHS compliant? Yes, the CSD18533Q5AT is RoHS compliant.
  6. What package type is used for the CSD18533Q5AT? The CSD18533Q5AT is packaged in a SON 5 mm × 6 mm plastic package.
  7. What are the typical applications for the CSD18533Q5AT? Typical applications include DC-DC conversion, secondary side synchronous rectifier, and motor control.
  8. What is the thermal resistance junction to ambient for the CSD18533Q5AT? The thermal resistance junction to ambient is typically 50°C/W.
  9. Is the CSD18533Q5AT halogen-free? Yes, the CSD18533Q5AT is halogen-free.
  10. What is the pulsed drain current rating for the CSD18533Q5AT? The pulsed drain current rating is 267 A at TA = 25°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:17A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.9mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2750 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 116W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18533Q5AT CSD18563Q5AT CSD18534Q5AT CSD19533Q5AT CSD18503Q5AT CSD18513Q5AT CSD18531Q5AT CSD18533Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 100 V 40 V 40 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 17A (Ta), 100A (Tc) 100A (Ta) 50A (Ta) 100A (Ta) 100A (Tc) 124A (Tc) 100A (Ta) 17A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 6V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.9mOhm @ 18A, 10V 6.8mOhm @ 18A, 10V 9.8mOhm @ 14A, 10V 9.4mOhm @ 13A, 10V 4.3mOhm @ 22A, 10V 5.3mOhm @ 19A, 10V 4.6mOhm @ 22A, 10V 5.9mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.4V @ 250µA 2.3V @ 250µA 3.4V @ 250µA 2.3V @ 250µA 2.4V @ 250µA 2.3V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V 20 nC @ 10 V 11.1 nC @ 4.5 V 35 nC @ 10 V 16 nC @ 4.5 V 61 nC @ 10 V 43 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2750 pF @ 30 V 1500 pF @ 30 V 1770 pF @ 30 V 2670 pF @ 50 V 2640 pF @ 20 V 4280 pF @ 20 V 3840 pF @ 30 V 2750 pF @ 30 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.2W (Ta), 116W (Tc) 3.2W (Ta), 116W (Tc) 3.1W (Ta), 77W (Tc) 3.2W (Ta), 96W (Tc) 3.1W (Ta), 120W (Tc) 96W (Tc) 3.1W (Ta), 156W (Tc) 3.2W (Ta), 116W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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