CSD18513Q5AT
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Texas Instruments CSD18513Q5AT

Manufacturer No:
CSD18513Q5AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 124A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD18513Q5AT is an N-channel power MOSFET designed by Texas Instruments. It is part of the NexFET™ family, known for delivering high efficiency and performance in power supply applications. This MOSFET is packaged in a VSONP (DQJ) package with 8 pins and measures 5 mm x 6 mm, making it suitable for compact and high-density designs.

Key Specifications

ParameterValue
Voltage Rating (Vds)40 V
Current Rating (Id)100 A
On-Resistance (Rds(on))3.4 mΩ
Package TypeVSONP (DQJ) 8-pin
Package Size5 mm x 6 mm
Power Dissipation (Pd)96 W

Key Features

The CSD18513Q5AT features several key advantages that make it a preferred choice in power electronics:

  • Low On-Resistance: With an Rds(on) of 3.4 mΩ, this MOSFET minimizes power losses and enhances overall system efficiency.
  • High Current Capability: It can handle up to 100 A, making it suitable for high-power applications.
  • Compact Package: The VSONP (DQJ) package is designed for high-density designs, allowing for more efficient use of board space.
  • High Efficiency: The NexFET™ technology enables the achievement of 90% power-supply efficiencies with double the frequency compared to other MOSFETs.

Applications

The CSD18513Q5AT is ideal for various high-power applications, including:

  • Power Supplies: DC-DC converters, switch-mode power supplies, and other high-efficiency power conversion systems.
  • Motor Control: Electric motor drives, servo motors, and other high-current motor control applications.
  • Industrial Automation: High-power switching in industrial automation systems.
  • Renewable Energy Systems: Solar and wind power systems that require high efficiency and reliability.

Q & A

  1. Q: What is the voltage rating of the CSD18513Q5AT MOSFET?
    A: The voltage rating (Vds) of the CSD18513Q5AT is 40 V.
  2. Q: What is the current rating of the CSD18513Q5AT MOSFET?
    A: The current rating (Id) of the CSD18513Q5AT is 100 A.
  3. Q: What is the on-resistance (Rds(on)) of the CSD18513Q5AT?
    A: The on-resistance (Rds(on)) of the CSD18513Q5AT is 3.4 mΩ.
  4. Q: What package type does the CSD18513Q5AT come in?
    A: The CSD18513Q5AT comes in a VSONP (DQJ) package with 8 pins.
  5. Q: What are the dimensions of the CSD18513Q5AT package?
    A: The package dimensions are 5 mm x 6 mm.
  6. Q: What is the power dissipation (Pd) of the CSD18513Q5AT?
    A: The power dissipation (Pd) of the CSD18513Q5AT is 96 W.
  7. Q: What technology does the CSD18513Q5AT use?
    A: The CSD18513Q5AT uses Texas Instruments' NexFET™ technology.
  8. Q: What are some typical applications for the CSD18513Q5AT?
    A: Typical applications include power supplies, motor control, industrial automation, and renewable energy systems.
  9. Q: How does the CSD18513Q5AT enhance system efficiency?
    A: The CSD18513Q5AT enhances system efficiency by delivering half the gate charge for the same resistance, allowing for 90% power-supply efficiencies with double the frequency.
  10. Q: Where can I find detailed specifications and datasheets for the CSD18513Q5AT?
    A: Detailed specifications and datasheets can be found on the Texas Instruments website, as well as through distributors like Mouser and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:124A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.3mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4280 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18513Q5AT CSD18563Q5AT CSD18514Q5AT CSD18533Q5AT CSD18503Q5AT CSD18511Q5AT CSD18513Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V 40 V 60 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 124A (Tc) 100A (Ta) 89A (Tc) 17A (Ta), 100A (Tc) 100A (Tc) 159A (Tc) 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.3mOhm @ 19A, 10V 6.8mOhm @ 18A, 10V 7.9mOhm @ 15A, 10V 5.9mOhm @ 18A, 10V 4.3mOhm @ 22A, 10V 3.5mOhm @ 24A, 4.5V 5.3mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 250µA 2.4V @ 250µA 2.3V @ 250µA 2.3V @ 250µA 2.45V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V 20 nC @ 10 V 40 nC @ 10 V 36 nC @ 10 V 16 nC @ 4.5 V 63 nC @ 10 V 61 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4280 pF @ 20 V 1500 pF @ 30 V 2683 pF @ 20 V 2750 pF @ 30 V 2640 pF @ 20 V 5850 pF @ 10 V 4280 pF @ 20 V
FET Feature - - - - - - -
Power Dissipation (Max) 96W (Tc) 3.2W (Ta), 116W (Tc) 74W (Tc) 3.2W (Ta), 116W (Tc) 3.1W (Ta), 120W (Tc) 104W (Tc) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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