CSD18513Q5A
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Texas Instruments CSD18513Q5A

Manufacturer No:
CSD18513Q5A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 124A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18513Q5A is a 40-V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, offering low on-state resistance and low thermal resistance. It is packaged in a 5-mm × 6-mm SON (Small Outline No-lead) plastic package, making it suitable for space-constrained designs. The MOSFET is logic level, lead-free, RoHS compliant, and halogen-free, ensuring environmental and regulatory compliance.

Key Specifications

ParameterTest ConditionsTypical ValueUnit
Drain-to-Source Voltage (VDS)VGS = 0 V, ID = 250 μA40V
Gate-to-Source Threshold Voltage (VGS(th))VDS = VGS, ID = 250 μA1.8V
Drain-to-Source On Resistance (RDS(on)) at VGS = 10 VID = 19 A2.8
Continuous Drain Current (ID)TC = 25°C100A
Pulsed Drain Current (IDM)Pulse duration ≤100 μs, duty cycle ≤ 1%400A
Power Dissipation (PD)TC = 25°C3.1W
Operating Junction Temperature (TJ)-55 to 150°C
Avalanche Energy (EAS)ID = 46 A, L = 0.1 mH, RG = 25 Ω106mJ
Gate Charge Total (Qg) at 10 VVDS = 20 V, ID = 19 A45nC

Key Features

  • Low RDS(on) for reduced power losses
  • Low thermal resistance for efficient heat dissipation
  • Avalanche rated for robustness in high-energy applications
  • Logic level for compatibility with low-voltage control signals
  • Lead-free terminal plating and RoHS compliant for environmental compliance
  • Halogen-free packaging
  • Compact 5-mm × 6-mm SON plastic package

Applications

  • DC-DC conversion
  • Secondary side synchronous rectifier
  • Battery motor control

Q & A

  1. What is the maximum drain-to-source voltage of the CSD18513Q5A?
    The maximum drain-to-source voltage (VDS) is 40 V.
  2. What is the typical on-state resistance (RDS(on)) at VGS = 10 V?
    The typical on-state resistance (RDS(on)) at VGS = 10 V is 2.8 mΩ.
  3. What is the continuous drain current rating of the CSD18513Q5A?
    The continuous drain current rating is 100 A.
  4. What is the maximum pulsed drain current?
    The maximum pulsed drain current (IDM) is 400 A for pulse durations ≤100 μs and duty cycles ≤ 1%.
  5. Is the CSD18513Q5A RoHS compliant?
    Yes, the CSD18513Q5A is RoHS compliant and halogen-free.
  6. What is the operating junction temperature range?
    The operating junction temperature range is -55°C to 150°C.
  7. What are the typical applications of the CSD18513Q5A?
    The typical applications include DC-DC conversion, secondary side synchronous rectifier, and battery motor control.
  8. What is the package type of the CSD18513Q5A?
    The package type is a 5-mm × 6-mm SON (Small Outline No-lead) plastic package.
  9. What is the gate charge total at VGS = 10 V?
    The gate charge total at VGS = 10 V is 45 nC.
  10. Is the CSD18513Q5A avalanche rated?
    Yes, the CSD18513Q5A is avalanche rated with an avalanche energy (EAS) of 106 mJ.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:124A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.3mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4280 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Part Number CSD18513Q5A CSD18514Q5A CSD18533Q5A CSD18513Q5AT CSD18563Q5A CSD18503Q5A CSD18511Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 60 V 40 V 60 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 124A (Tc) 89A (Tc) 17A (Ta), 100A (Tc) 124A (Tc) 100A (Ta) 19A (Ta), 100A (Tc) 159A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.3mOhm @ 19A, 10V 7.9mOhm @ 15A, 10V 5.9mOhm @ 18A, 10V 5.3mOhm @ 19A, 10V 6.8mOhm @ 18A, 10V 4.3mOhm @ 22A, 10V 3.5mOhm @ 24A, 4.5V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 250µA 2.3V @ 250µA 2.4V @ 250µA 2.4V @ 250µA 2.3V @ 250µA 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V - 36 nC @ 10 V 61 nC @ 10 V 20 nC @ 10 V 32 nC @ 10 V 63 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4280 pF @ 20 V - 2750 pF @ 30 V 4280 pF @ 20 V 1500 pF @ 30 V 2640 pF @ 20 V 5850 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 96W (Tc) 74W (Tc) 3.2W (Ta), 116W (Tc) 96W (Tc) 3.2W (Ta), 116W (Tc) 3.1W (Ta), 120W (Tc) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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