CSD18514Q5A
  • Share:

Texas Instruments CSD18514Q5A

Manufacturer No:
CSD18514Q5A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 89A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD18514Q5A is a 40-V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed in a SON 5-mm × 6-mm package and is optimized to minimize losses in power conversion applications. With a low on-resistance (RDS(ON)) of 4.1 mΩ at VGS = 10 V, it offers high efficiency and reliability in various power management scenarios.

Key Specifications

ParameterTypical ValueUnit
VDS (Drain-to-Source Voltage)40V
VGS (Gate-to-Source Voltage)±20V
RDS(ON) at VGS = 10 V4.1
RDS(ON) at VGS = 4.5 V6.0
ID (Continuous Drain Current, Silicon Limited at TC = 25°C)89A
ID (Continuous Drain Current, Package Limited)50A
IDM (Pulsed Drain Current)237A
VGS(th) (Gate-to-Source Threshold Voltage)1.8V
TJ, Tstg (Operating Junction, Storage Temperature)-55 to 150°C
EAS (Avalanche Energy, Single Pulse)55mJ

Key Features

  • Low RDS(ON)
  • Low-Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Battery Motor Control

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD18514Q5A?
    The maximum drain-to-source voltage (VDS) is 40 V.
  2. What is the typical on-resistance (RDS(ON)) at VGS = 10 V?
    The typical on-resistance (RDS(ON)) at VGS = 10 V is 4.1 mΩ.
  3. What is the continuous drain current (ID) silicon limited at TC = 25°C?
    The continuous drain current (ID) silicon limited at TC = 25°C is 89 A.
  4. What is the pulsed drain current (IDM)?
    The pulsed drain current (IDM) is 237 A.
  5. What is the operating junction and storage temperature range?
    The operating junction and storage temperature range is -55 to 150°C.
  6. Is the CSD18514Q5A RoHS compliant?
    Yes, the CSD18514Q5A is RoHS compliant.
  7. What is the package type of the CSD18514Q5A?
    The package type is VSONP-8.
  8. What are some common applications of the CSD18514Q5A?
    Common applications include DC-DC conversion, secondary side synchronous rectifier, and battery motor control.
  9. What is the gate-to-source threshold voltage (VGS(th))?
    The gate-to-source threshold voltage (VGS(th)) is typically 1.8 V.
  10. Is the CSD18514Q5A halogen free?
    Yes, the CSD18514Q5A is halogen free.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:89A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$0.92
249

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0T2X/AA
DD44S32S0T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number CSD18514Q5A CSD18534Q5A CSD18514Q5AT CSD18504Q5A CSD18511Q5A CSD18513Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 89A (Tc) 13A (Ta), 50A (Tc) 89A (Tc) 15A (Ta), 50A (Tc) 159A (Tc) 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 15A, 10V 9.8mOhm @ 14A, 10V 7.9mOhm @ 15A, 10V 6.6mOhm @ 17A, 10V 3.5mOhm @ 24A, 4.5V 5.3mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.3V @ 250µA 2.4V @ 250µA 2.4V @ 250µA 2.45V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 22 nC @ 10 V 40 nC @ 10 V 19 nC @ 10 V 63 nC @ 10 V 61 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 1770 pF @ 30 V 2683 pF @ 20 V 1656 pF @ 20 V 5850 pF @ 10 V 4280 pF @ 20 V
FET Feature - - - - - -
Power Dissipation (Max) 74W (Tc) 3.1W (Ta), 77W (Tc) 74W (Tc) 3.1W (Ta), 77W (Tc) 104W (Tc) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

TLV2548QDWRG4
TLV2548QDWRG4
Texas Instruments
IC ADC 12BIT SAR 20SOIC
TMS320VC5407ZGU
TMS320VC5407ZGU
Texas Instruments
IC DGTL SIGNAL PROCESSOR 144-BGA
AM26LS31CDE4
AM26LS31CDE4
Texas Instruments
IC DRIVER 4/0 16SOIC
THS4011ID
THS4011ID
Texas Instruments
IC VOLTAGE FEEDBACK 1 CIRC 8SOIC
LMC7221BIM5X/NOPB
LMC7221BIM5X/NOPB
Texas Instruments
IC COMPAR TNY CMOS RR IN SOT23-5
SN74AHC594DRG4
SN74AHC594DRG4
Texas Instruments
IC SHIFT REGISTER 8BIT 16-SOIC
CD4056BME4
CD4056BME4
Texas Instruments
IC DRVR 7 SEGMENT 1 DIGIT 16SOIC
UCD9081RHBT
UCD9081RHBT
Texas Instruments
IC SUPERVISOR 8 CHANNEL 32VQFN
TPS63031DSKTG4
TPS63031DSKTG4
Texas Instruments
IC REG BCK BST 3.3V 900MA 10SON
TPS7A2036PDQNR
TPS7A2036PDQNR
Texas Instruments
300-MA, ULTRA-LOW-NOISE, LOW-IQ,
TPS73625DBVRG4
TPS73625DBVRG4
Texas Instruments
IC REG LINEAR 2.5V 400MA SOT23-5
CC2590RGVR
CC2590RGVR
Texas Instruments
IC RF FRONT END 2.4GHZ 16-QFN