CSD18514Q5A
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Texas Instruments CSD18514Q5A

Manufacturer No:
CSD18514Q5A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 89A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18514Q5A is a 40-V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed in a SON 5-mm × 6-mm package and is optimized to minimize losses in power conversion applications. With a low on-resistance (RDS(ON)) of 4.1 mΩ at VGS = 10 V, it offers high efficiency and reliability in various power management scenarios.

Key Specifications

ParameterTypical ValueUnit
VDS (Drain-to-Source Voltage)40V
VGS (Gate-to-Source Voltage)±20V
RDS(ON) at VGS = 10 V4.1
RDS(ON) at VGS = 4.5 V6.0
ID (Continuous Drain Current, Silicon Limited at TC = 25°C)89A
ID (Continuous Drain Current, Package Limited)50A
IDM (Pulsed Drain Current)237A
VGS(th) (Gate-to-Source Threshold Voltage)1.8V
TJ, Tstg (Operating Junction, Storage Temperature)-55 to 150°C
EAS (Avalanche Energy, Single Pulse)55mJ

Key Features

  • Low RDS(ON)
  • Low-Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Battery Motor Control

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD18514Q5A?
    The maximum drain-to-source voltage (VDS) is 40 V.
  2. What is the typical on-resistance (RDS(ON)) at VGS = 10 V?
    The typical on-resistance (RDS(ON)) at VGS = 10 V is 4.1 mΩ.
  3. What is the continuous drain current (ID) silicon limited at TC = 25°C?
    The continuous drain current (ID) silicon limited at TC = 25°C is 89 A.
  4. What is the pulsed drain current (IDM)?
    The pulsed drain current (IDM) is 237 A.
  5. What is the operating junction and storage temperature range?
    The operating junction and storage temperature range is -55 to 150°C.
  6. Is the CSD18514Q5A RoHS compliant?
    Yes, the CSD18514Q5A is RoHS compliant.
  7. What is the package type of the CSD18514Q5A?
    The package type is VSONP-8.
  8. What are some common applications of the CSD18514Q5A?
    Common applications include DC-DC conversion, secondary side synchronous rectifier, and battery motor control.
  9. What is the gate-to-source threshold voltage (VGS(th))?
    The gate-to-source threshold voltage (VGS(th)) is typically 1.8 V.
  10. Is the CSD18514Q5A halogen free?
    Yes, the CSD18514Q5A is halogen free.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:89A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18514Q5A CSD18534Q5A CSD18514Q5AT CSD18504Q5A CSD18511Q5A CSD18513Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 89A (Tc) 13A (Ta), 50A (Tc) 89A (Tc) 15A (Ta), 50A (Tc) 159A (Tc) 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 15A, 10V 9.8mOhm @ 14A, 10V 7.9mOhm @ 15A, 10V 6.6mOhm @ 17A, 10V 3.5mOhm @ 24A, 4.5V 5.3mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.3V @ 250µA 2.4V @ 250µA 2.4V @ 250µA 2.45V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 22 nC @ 10 V 40 nC @ 10 V 19 nC @ 10 V 63 nC @ 10 V 61 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 1770 pF @ 30 V 2683 pF @ 20 V 1656 pF @ 20 V 5850 pF @ 10 V 4280 pF @ 20 V
FET Feature - - - - - -
Power Dissipation (Max) 74W (Tc) 3.1W (Ta), 77W (Tc) 74W (Tc) 3.1W (Ta), 77W (Tc) 104W (Tc) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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