2N7002HSX
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Nexperia USA Inc. 2N7002HSX

Manufacturer No:
2N7002HSX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
2N7002HS/SOT363/SC-88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002HSX is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET utilizes Trench MOSFET technology and is packaged in a SOT23 package. It is designed to offer high efficiency and superior switching performance, making it suitable for a variety of power management applications.

Key Specifications

Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain Current (Continuous) ID 210 mA (at VGS = 10V, TA = +25°C) mA
On-State Resistance (RDS(ON)) RDS(ON) 7.5 Ω (at VGS = 5V) Ω
Gate-Source Voltage (Continuous) VGSS ±20 V V
Total Power Dissipation PD 370 mW (at TA = +25°C) mW
Thermal Resistance, Junction to Ambient RθJA 348 °C/W °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C °C

Key Features

  • Low On-Resistance: The 2N7002HSX has a low RDS(ON) of 7.5 Ω at VGS = 5V, ensuring high efficiency in power management applications.
  • Low Gate Threshold Voltage: This MOSFET has a low gate threshold voltage, making it easy to switch on and off.
  • Low Input Capacitance: It features low input capacitance, which enhances its switching speed and performance.
  • Fast Switching Speed: The 2N7002HSX is designed for fast switching, making it suitable for high-frequency applications.
  • Small Surface Mount Package: The SOT23 package is compact, saving PCB space and facilitating easier design and assembly.
  • Totally Lead-Free & Fully RoHS Compliant: This MOSFET is lead-free and compliant with EU Directive 2002/95/EC (RoHS) and 2011/65/EU (RoHS 2), ensuring environmental sustainability.
  • Halogen and Antimony Free: It is free from halogen and antimony, further enhancing its environmental credentials.

Applications

  • Motor Control: The 2N7002HSX is often used in motor control circuits due to its high efficiency and fast switching capabilities.
  • Power Management Functions: It is ideal for various power management applications, including voltage regulation and power switching.
  • General Switching Applications: This MOSFET can be used as a switch or voltage-controlled resistor in a wide range of electronic circuits.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002HSX?

    The maximum drain-source voltage (VDSS) is 60 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) is 210 mA at VGS = 10V and TA = +25°C.

  3. What is the on-state resistance (RDS(ON)) of the 2N7002HSX?

    The on-state resistance (RDS(ON)) is 7.5 Ω at VGS = 5V.

  4. Is the 2N7002HSX RoHS compliant?

    Yes, the 2N7002HSX is totally lead-free and fully RoHS compliant.

  5. What is the operating temperature range of the 2N7002HSX?

    The operating and storage temperature range is -55 to +150 °C.

  6. What package type is the 2N7002HSX available in?

    The 2N7002HSX is available in a SOT23 package.

  7. What are some common applications of the 2N7002HSX?

    Common applications include motor control, power management functions, and general switching applications.

  8. What is the maximum total power dissipation of the 2N7002HSX at 25°C?

    The maximum total power dissipation (PD) is 370 mW at TA = +25°C.

  9. Is the 2N7002HSX suitable for high-frequency applications?

    Yes, it is designed for fast switching and is suitable for high-frequency applications.

  10. What is the thermal resistance, junction to ambient (RθJA) of the 2N7002HSX?

    The thermal resistance, junction to ambient (RθJA) is 348 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002HSX 2N7002HWX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Tc) 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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