Overview
The 2N7002HSX is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET utilizes Trench MOSFET technology and is packaged in a SOT23 package. It is designed to offer high efficiency and superior switching performance, making it suitable for a variety of power management applications.
Key Specifications
Characteristic | Symbol | Value | Units |
---|---|---|---|
Drain-Source Voltage | VDSS | 60 | V |
Drain Current (Continuous) | ID | 210 mA (at VGS = 10V, TA = +25°C) | mA |
On-State Resistance (RDS(ON)) | RDS(ON) | 7.5 Ω (at VGS = 5V) | Ω |
Gate-Source Voltage (Continuous) | VGSS | ±20 V | V |
Total Power Dissipation | PD | 370 mW (at TA = +25°C) | mW |
Thermal Resistance, Junction to Ambient | RθJA | 348 °C/W | °C/W |
Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 °C | °C |
Key Features
- Low On-Resistance: The 2N7002HSX has a low RDS(ON) of 7.5 Ω at VGS = 5V, ensuring high efficiency in power management applications.
- Low Gate Threshold Voltage: This MOSFET has a low gate threshold voltage, making it easy to switch on and off.
- Low Input Capacitance: It features low input capacitance, which enhances its switching speed and performance.
- Fast Switching Speed: The 2N7002HSX is designed for fast switching, making it suitable for high-frequency applications.
- Small Surface Mount Package: The SOT23 package is compact, saving PCB space and facilitating easier design and assembly.
- Totally Lead-Free & Fully RoHS Compliant: This MOSFET is lead-free and compliant with EU Directive 2002/95/EC (RoHS) and 2011/65/EU (RoHS 2), ensuring environmental sustainability.
- Halogen and Antimony Free: It is free from halogen and antimony, further enhancing its environmental credentials.
Applications
- Motor Control: The 2N7002HSX is often used in motor control circuits due to its high efficiency and fast switching capabilities.
- Power Management Functions: It is ideal for various power management applications, including voltage regulation and power switching.
- General Switching Applications: This MOSFET can be used as a switch or voltage-controlled resistor in a wide range of electronic circuits.
Q & A
- What is the maximum drain-source voltage of the 2N7002HSX?
The maximum drain-source voltage (VDSS) is 60 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) is 210 mA at VGS = 10V and TA = +25°C.
- What is the on-state resistance (RDS(ON)) of the 2N7002HSX?
The on-state resistance (RDS(ON)) is 7.5 Ω at VGS = 5V.
- Is the 2N7002HSX RoHS compliant?
Yes, the 2N7002HSX is totally lead-free and fully RoHS compliant.
- What is the operating temperature range of the 2N7002HSX?
The operating and storage temperature range is -55 to +150 °C.
- What package type is the 2N7002HSX available in?
The 2N7002HSX is available in a SOT23 package.
- What are some common applications of the 2N7002HSX?
Common applications include motor control, power management functions, and general switching applications.
- What is the maximum total power dissipation of the 2N7002HSX at 25°C?
The maximum total power dissipation (PD) is 370 mW at TA = +25°C.
- Is the 2N7002HSX suitable for high-frequency applications?
Yes, it is designed for fast switching and is suitable for high-frequency applications.
- What is the thermal resistance, junction to ambient (RθJA) of the 2N7002HSX?
The thermal resistance, junction to ambient (RθJA) is 348 °C/W.