2N7002HSX
  • Share:

Nexperia USA Inc. 2N7002HSX

Manufacturer No:
2N7002HSX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
2N7002HS/SOT363/SC-88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002HSX is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET utilizes Trench MOSFET technology and is packaged in a SOT23 package. It is designed to offer high efficiency and superior switching performance, making it suitable for a variety of power management applications.

Key Specifications

Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain Current (Continuous) ID 210 mA (at VGS = 10V, TA = +25°C) mA
On-State Resistance (RDS(ON)) RDS(ON) 7.5 Ω (at VGS = 5V) Ω
Gate-Source Voltage (Continuous) VGSS ±20 V V
Total Power Dissipation PD 370 mW (at TA = +25°C) mW
Thermal Resistance, Junction to Ambient RθJA 348 °C/W °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C °C

Key Features

  • Low On-Resistance: The 2N7002HSX has a low RDS(ON) of 7.5 Ω at VGS = 5V, ensuring high efficiency in power management applications.
  • Low Gate Threshold Voltage: This MOSFET has a low gate threshold voltage, making it easy to switch on and off.
  • Low Input Capacitance: It features low input capacitance, which enhances its switching speed and performance.
  • Fast Switching Speed: The 2N7002HSX is designed for fast switching, making it suitable for high-frequency applications.
  • Small Surface Mount Package: The SOT23 package is compact, saving PCB space and facilitating easier design and assembly.
  • Totally Lead-Free & Fully RoHS Compliant: This MOSFET is lead-free and compliant with EU Directive 2002/95/EC (RoHS) and 2011/65/EU (RoHS 2), ensuring environmental sustainability.
  • Halogen and Antimony Free: It is free from halogen and antimony, further enhancing its environmental credentials.

Applications

  • Motor Control: The 2N7002HSX is often used in motor control circuits due to its high efficiency and fast switching capabilities.
  • Power Management Functions: It is ideal for various power management applications, including voltage regulation and power switching.
  • General Switching Applications: This MOSFET can be used as a switch or voltage-controlled resistor in a wide range of electronic circuits.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002HSX?

    The maximum drain-source voltage (VDSS) is 60 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) is 210 mA at VGS = 10V and TA = +25°C.

  3. What is the on-state resistance (RDS(ON)) of the 2N7002HSX?

    The on-state resistance (RDS(ON)) is 7.5 Ω at VGS = 5V.

  4. Is the 2N7002HSX RoHS compliant?

    Yes, the 2N7002HSX is totally lead-free and fully RoHS compliant.

  5. What is the operating temperature range of the 2N7002HSX?

    The operating and storage temperature range is -55 to +150 °C.

  6. What package type is the 2N7002HSX available in?

    The 2N7002HSX is available in a SOT23 package.

  7. What are some common applications of the 2N7002HSX?

    Common applications include motor control, power management functions, and general switching applications.

  8. What is the maximum total power dissipation of the 2N7002HSX at 25°C?

    The maximum total power dissipation (PD) is 370 mW at TA = +25°C.

  9. Is the 2N7002HSX suitable for high-frequency applications?

    Yes, it is designed for fast switching and is suitable for high-frequency applications.

  10. What is the thermal resistance, junction to ambient (RθJA) of the 2N7002HSX?

    The thermal resistance, junction to ambient (RθJA) is 348 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.47
2,075

Please send RFQ , we will respond immediately.

Same Series
DD26M20JV5Z
DD26M20JV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S00X/AA
DD26S2S00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60TX
DD44S32S60TX
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number 2N7002HSX 2N7002HWX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Tc) 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

BAS40W,115
BAS40W,115
Nexperia USA Inc.
NEXPERIA BAS40W - RECTIFIER DIOD
BC807-40HZ
BC807-40HZ
Nexperia USA Inc.
BC807-40H/SOT23/TO-236AB
BC807-25QCZ
BC807-25QCZ
Nexperia USA Inc.
TRANS 45V 0.5A DFN1412D-3
PBSS4021NX,115
PBSS4021NX,115
Nexperia USA Inc.
TRANS NPN 20V 7A SOT89
BCX54-16TF
BCX54-16TF
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
PMST3904/ZLF
PMST3904/ZLF
Nexperia USA Inc.
PMST3904/ZLF
BC857-QR
BC857-QR
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
BUK9K6R2-40E,115
BUK9K6R2-40E,115
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A LFPAK56D
74LV4060PW-Q100J
74LV4060PW-Q100J
Nexperia USA Inc.
IC COUNTER 14STAGE BIN 16TSSOP
74HC11DB,118-NEX
74HC11DB,118-NEX
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14SSOP
74AHC373PW,118
74AHC373PW,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20TSSOP
74LVC373ADB112
74LVC373ADB112
Nexperia USA Inc.
NOW NEXPERIA 74LVC373ADB - BUS D